PD - 97391B

IRG7PH42UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) trench IGBT technology VCES = 1200V
• Low switching losses
• Square RBSOA IC = 45A, TC = 100°C
• 100% of the parts tested for ILM 
• Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution E VCE(on) typ. = 1.7V
• Lead-Free
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to C C
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation

Applications E E
GC GC
• U.P.S.
TO-247AC TO-247AD
• Welding
IRG7PH42UDPbF IRG7PH42UD-EP
• Solar Inverter
• Induction Heating G C E
Gate Collector Emitter

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current (Silicon Limited) 85g
IC @ TC = 100°C Continuous Collector Current (Silicon Limited) 45
INOMINAL Nominal Current 30
ICM Pulse Collector Current, VGE = 15V 90 A
ILM Clamped Inductive Load Current, VGE = 20V c 120
IF @ TC = 25°C Diode Continous Forward Current 85
IF @ TC = 100°C Diode Continous Forward Current 45
IFM Diode Maximum Forward Current d 120
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 320 W
PD @ TC = 100°C Maximum Power Dissipation 130
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.39
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f ––– ––– 0.56 °C/W
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

1 www.irf.com
10/26/09
IRG7PH42UDPbF/IRG7PH42UD-EP

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100µA e
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.18 — V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0 IC = 30A, VGE = 15V, TJ = 25°C
— 2.1 — V IC = 30A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 1.0mA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -14 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 150°C)
gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 4.4 150 µA VGE = 0V, VCE = 1200V
— 1200 — VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.0 2.4 V IF = 30A
— 2.2 — IF = 30A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 157 236 IC = 30A
Qge Gate-to-Emitter Charge (turn-on) — 21 32 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 69 104 VCC = 600V
Eon Turn-On Switching Loss — 2105 2374 IC = 30A, VCC = 600V, VGE = 15V
Eoff Turn-Off Switching Loss — 1182 1424 µJ RG = 10Ω, L = 200µH,TJ = 25°C
Etotal Total Switching Loss — 3287 3798 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 25 34
tr Rise time — 32 41 ns
td(off) Turn-Off delay time — 229 271
tf Fall time — 63 86
Eon Turn-On Switching Loss — 2978 — IC = 30A, VCC = 600V, VGE=15V
Eoff Turn-Off Switching Loss — 1968 — µJ RG=10Ω, L=200µH, TJ = 150°C e
Etotal Total Switching Loss — 4946 — Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 19 —
tr Rise time — 32 — ns
td(off) Turn-Off delay time — 290 —
tf Fall time — 154 —
Cies Input Capacitance — 3338 — pF VGE = 0V
Coes Output Capacitance — 124 — VCC = 30V
Cres Reverse Transfer Capacitance — 75 — f = 1.0Mhz
TJ = 150°C, IC = 120A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V
Rg = 10Ω, VGE = +20V to 0V
Erec Reverse Recovery Energy of the Diode — 1475 — µJ TJ = 150°C
trr Diode Reverse Recovery Time — 153 — ns VCC = 600V, IF = 30A
Irr Peak Reverse Recovery Current — 34 — A Rg = 10Ω, L =1.0mH

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 78A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.

2 www.irf.com
 IRG7PH42UDPbF/IRG7PH42UD-EP
60
For both:
Duty cycle : 50%
50 Tj = 150°C
Tsink = 90°C
Gate drive as specified
40
Load Current ( A )

Power Dissipation = 95W

30
Square wave:
60% of rated
voltage
20
I

10 Ideal diodes

0
0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100 350

300
80

250
60
200
Ptot (W)
IC (A)

40 150

100
20
50

0
25 50 75 100 125 150 175 0
0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000

100
100
10µsec
IC (A)
IC (A)

10

DC 100µsec
10
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1 1
1 10 100 1000 10000 10 100 1000 10000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V TJ = 150°C; VGE = 20V

www.irf.com 3
IRG7PH42UDPbF/IRG7PH42UD-EP
120 120
VGE = 18V VGE = 18V
100 VGE = 15V 100 VGE = 15V
VGE = 12V VGE = 12V
VGE = 10V VGE = 10V
80 VGE = 8.0V 80 VGE = 8.0V

ICE (A)
ICE (A)

60 60

40 40

20 20

0 0
0 2 4 6 8 10 0 2 4 6 8 10
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs
120 120
VGE = 18V
100 VGE = 15V 100
VGE = 12V -40°C
VGE = 10V 25°C
80 VGE = 8.0V 80 150°C
ICE (A)

IF (A)

60 60

40 40

20 20

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs tp = 80µs
12 12

10 10

8 8
ICE = 15A ICE = 15A
VCE (V)
VCE (V)

ICE = 30A ICE = 30A

6 6
ICE = 60A ICE = 60A

4
4

2
2

0
0
4 8 12 16 20
4 8 12 16 20
VGE (V)
VGE (V)
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE TJ = 25°C
TJ = -40°C

4 www.irf.com
 IRG7PH42UDPbF/IRG7PH42UD-EP
12 120

ICE, Collector-to-Emitter Current (A)

10 100

8 80

ICE = 15A
VCE (V)

60 T J = 25°C
6 ICE = 30A
T J = 150°C
ICE = 60A
40
4

20
2

0
0
4 6 8 10 12
4 8 12 16 20
VGE, Gate-to-Emitter Voltage (V)
VGE (V)
Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C VCE = 50V
7000 1000

6000
tF

5000 Swiching Time (ns)

tdOFF
Energy (µJ)

4000
EON 100
3000

2000
EOFF tR
1000 tdON

0 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
IC (A) IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
6000 10000

5000
Swiching Time (ns)

1000
EON td OFF
Energy (µJ)

4000

EOFF
tF
3000
100
tR
2000
tdON

1000 10
0 20 40 60 80 100 0 20 40 60 80 100
RG (Ω) RG (Ω)

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V

www.irf.com 5
IRG7PH42UDPbF/IRG7PH42UD-EP
50 40

RG = 5.0Ω
40 35

RG = 10Ω RG = 47Ω
IRR (A)

IRR (A)
30 30

20 RG = 100Ω 25

10 20
15 20 25 30 35 40 45 50 55 60 0 20 40 60 80 100
IF (A) RG (Ω)

Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C TJ = 150°C
40 9000

8000 60A
35 5.0Ω
7000
10Ω
QRR (nC)

6000 47Ω
IRR (A)

30
30A
5000 100Ω

4000
25
15A
3000

20 2000
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400

diF /dt (A/µs) diF /dt (A/µs)

Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C VCC = 600V; VGE = 15V; TJ = 150°C

3500
RG = 5.0 Ω
3000 RG = 10 Ω
RG = 47Ω
2500 RG = 100Ω
Energy (µJ)

2000

1500

1000

500
15 20 25 30 35 40 45 50 55 60
IF (A)

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 150°C
6 www.irf.com
 IRG7PH42UDPbF/IRG7PH42UD-EP
10000 16

14 VCES = 600V

VGE, Gate-to-Emitter Voltage (V)

Cies VCES = 400V
12
1000
Capacitance (pF)

10

6
100
Coes
4

2
Cres
10 0
0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 180
VCE (V) Q G, Total Gate Charge (nC)

Fig. 22 - Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 30A; L = 600µH
1

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10
0.05
0.01 0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τJ 0.1306 0.000313
0.01 τJ
τC
τ
τ1 τ2
0.1752 0.002056
τ1 τ3 τ4
τ2 τ3 τ4 0.0814 0.008349
0.001 Ci= τi/Ri 0.0031 0.043100
Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1

D = 0.50

0.20
Thermal Response ( Z thJC )

0.1
0.10
0.05

0.01 0.02 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01 τJ τC 0.1254 0.000515
τJ τ
τ1 τ2
0.0937 0.000515
τ1 τ3 τ4
τ2 τ3 τ4 0.1889 0.001225
0.001
Ci= τi/Ri
Ci i/Ri
0.1511 0.018229

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 7
IRG7PH42UDPbF/IRG7PH42UD-EP

DUT VCC 80 V +
0 - DUT
1K VCC
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp / R= VCC

DUT ICM

-5V VCC
DUT
DUT / VCC Rg
DRIVER
Rg

Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit

C force

100K

D1 22K
C sense

DUT
G force 0.0075µF

E sense

E force

Fig.C.T.5 - BVCES Filter Circuit

8 www.irf.com
 IRG7PH42UDPbF/IRG7PH42UD-EP

900 90 900 90

800 80 800 80
tf tr
700 70 700 70
TEST CURRENT
600 60 600 60

500 50 500 50
90% test
90% ICE
VCE (V)

VCE (V)
I CE (A)

I CE (A)
current
400 40 400 40
300 5% V CE
30 300 30

200 20 200 20
5% ICE 10% test
current 5% V CE
100 10 100 10
0 0 0 0
Eof f Loss Eon Loss
-100 -10 -100 -10
-0.5 0 0.5 1 1.5 2 9.4 9.6 9.8 10 10.2
time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4

40
E REC
30
tRR
20

10
I F (A)

-10 10%
Peak
-20 Peak IRR
IRR
-30

-40
-0.25 0.00 0.25 0.50 0.75 1.00
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4

www.irf.com 9
IRG7PH42UDPbF/IRG7PH42UD-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 ,5)3(

,17+($66(0%/</,1(+ /2*2 +


'$7(&2'(
$66(0%/< <($5 
1RWH3LQDVVHPEO\OLQHSRVLWLRQ
LQGLFDWHV/HDG)UHH /27&2'( :((.
/,1(+

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10 www.irf.com
 IRG7PH42UDPbF/IRG7PH42UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/< 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5
,17+($66(0%/</,1(+ /2*2 +

'$7(&2'(


$66(0%/< <($5 

1RWH3LQDVVHPEO\OLQHSRVLWLRQ
LQGLFDWHV/HDG)UHH /27&2'( :((.
/,1(+

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2009

www.irf.com 11