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    P75N02LDG: N-Channel Enhancement Mode MOSFET

    Uploaded by

    Ariel Rodrigo Muñoz
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 25V - On-resistance of 5mΩ at a gate-source voltage of 10V - Continuous drain current rating of 75A at 25°C, falling to 50A at 100°C - Power dissipation rating of 54W at 25°C, falling to 32.75W at 100°C - Operating junction temperature range of -55°C to 150°C

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    © All Rights Reserved
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    P75N02LDG: N-Channel Enhancement Mode MOSFET

    Uploaded by

    Ariel Rodrigo Muñoz
    59 views5 pages
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 25V - On-resistance of 5mΩ at a gate-source voltage of 10V - Continuous drain current rating of 75A at 25°C, falling to 50A at 100°C - Power dissipation rating of 54W at 25°C, falling to 32.75W at 100°C - Operating junction temperature range of -55°C to 150°C

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    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 25V - On-resistance of 5mΩ at a gate-source voltage of 10V - Continuous drain current rating of 75A at 25°C, falling to 50A at 100°C - Power dissipation rating of 54W at 25°C, falling to 32.75W at 100°C - Operating junction temperature range of -55°C to 150°C

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    59 views5 pages

    P75N02LDG: N-Channel Enhancement Mode MOSFET

    Uploaded by

    Ariel Rodrigo Muñoz
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 25V - On-resistance of 5mΩ at a gate-source voltage of 10V - Continuous drain current rating of 75A at 25°C, falling to 50A at 100°C - Power dissipation rating of 54W at 25°C, falling to 32.75W at 100°C - Operating junction temperature range of -55°C to 150°C

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    © All Rights Reserved
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    P75N02LDG

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    25V 5mΩ @VGS = 10V 75A

    TO-252

    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Gate-Source Voltage VGS ±20 V
    TC = 25 °C 75
    Continuous Drain Current ID
    TC = 100 °C 50
    1
    A
    Pulsed Drain Current IDM 170
    Avalanche Current IAS 45
    Avalanche Energy L = 0.1mH EAS 100 mJ
    TC = 25 °C 54
    Power Dissipation PD W
    TC = 100 °C 32.75
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150
    1
    °C
    Lead Temperature ( /16" from case for 10 sec.) TL 275

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 2.3
    Junction-to-Ambient RqJA 62.5 °C / W
    Case-to-Heatsink RqCS 0.6
    1
    Pulse width limited by maximum junction temperature.

    Ver 1.1 1 2013-3-13


    P75N02LDG
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.5 3
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
    VDS = 20V, VGS = 0V 25
    Zero Gate Voltage Drain Current IDSS mA
    VDS = 20V, VGS = 0V , TJ = 125 °C 250
    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 75 A
    Drain-Source On-State VGS = 10V, ID = 30A 5 7
    RDS(ON) mΩ
    Resistance1 VGS = 4.5V, ID = 24A 6.6 10
    Forward Transconductance1 gfs VDS = 15V, ID = 30A 55 S
    DYNAMIC
    Input Capacitance Ciss 1840
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 712 pF
    Reverse Transfer Capacitance Crss 559
    Gate Resistance Rg VDS = 0V, VGS = 15mV,f=1MHz 1.25 Ω
    Qg（10V) 55
    Total Gate Charge2
    Qg(4.5V) 30
    Qgs(10V) 9.5
    Gate-Source Charge2 VDD = 15V, ID = 25A nC
    Qgs(4.5V) 8.8
    Qgd(10V) 19.5
    Gate-Drain Charge2
    Qgd(4.5V) 19
    2 td(on)
    Turn-On Delay Time 11.5
    2 tr
    Rise Time VDS = 15V, 17
    nS
    Turn-Off Delay Time 2 td(off) ID @ 30A, VGS = 10V, RG= 2.5Ω 32
    Fall Time2 tf 7.5
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
    Continuous Current IS 40 A
    1 VSD IF = IS, VGS = 0V
    Forward Voltage 1.3 V
    Reverse Recovery Time trr 37 nS
    Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / mS 200 A
    Reverse Recovery Charge Qrr 0.043 mC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.

    Ver 1.1 2 2013-3-13


    P75N02LDG
    N-Channel Enhancement Mode MOSFET

    Ver 1.1 3 2013-3-13


    P75N02LDG
    N-Channel Enhancement Mode MOSFET

    Ver 1.1 4 2013-3-13


    P75N02LDG
    N-Channel Enhancement Mode MOSFET

    Ver 1.1 5 2013-3-13

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