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Experiment 303 2

This document describes an experiment to characterize the behavior of NPN transistors. The objectives are to recognize transistor components and terminals, understand basic PNP and NPN transistor operation, and understand junction biasing and current flow directions. The experiment uses a BC107 NPN transistor in a common-base configuration. Students are instructed to measure the base-emitter voltage VEB and corresponding base IB and collector IC currents at different collector currents. They calculate the current gain ratios hfe and hfb and are asked questions about the results.

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aramide adeyemo
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51 views

Experiment 303 2

This document describes an experiment to characterize the behavior of NPN transistors. The objectives are to recognize transistor components and terminals, understand basic PNP and NPN transistor operation, and understand junction biasing and current flow directions. The experiment uses a BC107 NPN transistor in a common-base configuration. Students are instructed to measure the base-emitter voltage VEB and corresponding base IB and collector IC currents at different collector currents. They calculate the current gain ratios hfe and hfb and are asked questions about the results.

Uploaded by

aramide adeyemo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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EXPERIMENT 303

TITLE: INTRODUCTION TO TRANSISTOR ACTIONS


CHARACTERISTICS AND APPLICATIONS

Objectives: Ability to recognize transistors in various forms and to identify


their terminals.
Understanding of the basic of PNP and NPN transistors
Understanding of junction biasing and the direction and
magnitude of current flows

Fundamental Theory and Principles


Transistor Familiarization
Transistors are three-terminal devices constructed in the form of two
semiconductor junctions, rather like two junction diodes.
Figure below shows this for PNP and NPN types. The small difference current
flows in the base circuit.

The ratio is usually called

The ratio is usually called

Make sure you accurately identify the terminals of the transistors.


Practical Considerations and Applications
The measurements in this Assignment are made with the BC107 transistor
used in a circuit in which the E and C terminals are biased with voltage
relative to the base B. For this reason this circuit is called common base
connection.
It is also possible to bias the junctions with voltages relative to the emitter
collector, giving common emitter and common collector connections as in
fig 3.

In common-emitter, must be larger than to ensure that the


C-B junction remains reverse-biased.

In common-collector, must be larger than to ensure that E


– B junction remains forward-biased.
These three connections have important differences in their responses to
inputs.
The common-emitter and common-collector circuits are the most important
connections since the common-base is used only in special circumstances.
As with diodes, transistors can be made from Germanium instead of Silicon,
but Germanium devices are rarely used nowadays.

Practical 1

This uses the BC 107-NPN transistor. The capacitor is provided to ensure that
the circuit is stable and has no effect on your measurements.
Copy the results table as shown in fig 7, found in the Result Table section of
this experiment, in which to enter your results.
Turn the potentiometer to Zero (anti-clockwise) and switch on both power
supplies.
Slowly increase VEB by turning the potentiometer clockwise until I C just begins
to flow.
Connect the voltmeter temporarily between E and B on the transistor (3V dc
range) and note the value of VEB in the table.
Remove the meter and then continue increasing V EB until IC approximately
equals 1mA and record the values of IC and IB in the table.
Now increase VEB until IC approximately equals 10mA; again record IC and IB.
Satisfy yourself that both IB and IC are flowing in the directions shown in fig 6

For each set of readings calculate hfe, IE and hfb.

Results Table
IC (mA) VEB(V) IB (mA) IE= IC + IB(mA)
hfe =IC/IB hfb=IC/IE
Just - - - -
measureable
0.99 -

10 -

Questions
1. Did you reading of VEB confirm that forward-biased E-B junction is acting
like a simple diode? Explain.
2. Do your results show that hfb and hfe
(a) Increase;
(b) Decrease, or;
(c) Stay constant as IC increases?
3. Fig 8 shows an incomplete circuit of PNP transistor in common-emitter
connection.
Complete the circuit with a suitable collector bias voltage and show the
direction size of the collector current IC.

Also find hfb and hfe

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