The University of Jordan

School of Engineering
Electrical Engineering Department

EE 368
Electronics Lab

Experiment 5
Bipolar Junction Transistor Characteristics
 Electronics Lab. (0903368) 2 Experiment 5

Experiment 5

Bipolar Junction Transistor (BJT) Characteristics

Objectives
Objectives
 To identify the leads of the Bipolar Junction Transistor (BJT) using DMM.
 To investigate the DC behavior, analyze and design a DC bias circuit, its operating
point and the characteristics of the BJT in several regions of operation.

Theory

A Bipolar Transistor consists of three doped regions contains a pair of PN-Junction diodes. Each
PN- junction has two modes of operation (forward biased and reversed biased) which means that
the transistor has four possible modes of operation depending on the bias condition for each
diode. They are found everywhere and used in many electronic circuit applications such as in
sensors, amplifiers, OP-AMPs, oscillators and digital logic gates.
There are different sorts, shapes, and sizes of transistors. In this experiment we will consider one
basic general purpose type of transistor which is the Bipolar Junction Transistor (BJT) that
comes in two constructions called NPN and PNP as shown in Figure 1, which shows the block
diagram and circuit symbol for each type. For this experiment we will use the BC107 NPN
transistor which is built into a standard TO-18 package with three leads, each lead is connected
to one doped region. Figure 2 shows how the package looks like and identifies the three leads or
terminals as Emitter (E), Collector (C) and Base (B).
The basic transistor principle is that: “The voltage drop between two terminals 𝑣𝐵𝐸 controls the
current in the third terminal 𝑖𝐶 ”.

Figure 1: NPN and PNP BJT structure and symbol with related terminal currents and junction
voltages.

Figure 2:BC 107 NPN BJT Transistor TO-18 pin configuration.

 Electronics Lab. (0903368) 3 Experiment 5

Using the diode function of a DMM to perform diode test, the DMM provides a constant current
of about 𝟏𝒎𝑨 and it measures the voltage across two leads (terminals). The measured voltage
should read the threshold voltage (i.e 𝑽𝜸 𝒊𝒔 (𝟎. 𝟓 − 𝟎. 𝟔𝟓)𝑽) if the PN-junction is forward
biased. Otherwise, if the PN-junction is reverse biased, then the DMM cannot force 1𝑚𝐴 of
current to pass into the PN-junction and the voltage across the PN-junction rises up to the upper
range limit of the DMM, usually about (1.5 to 3.0) Volts. Other types of DMM give an over-
limit (.OL, 𝟏., or 𝟐 to 𝟑𝑽) indication.
The Common Emitter NPN circuit output i-v characteristics is shown in Figure 3, where the
collector current (𝑰𝑪 ) is plotted versus the collector –emitter voltage (𝑽𝑪𝑬 ) at certain base current
(𝑰𝑩 ).

Figure 3: The Common Emitter NPN circuit output i-v characteristics.

The four region of operations for a BJT transistor is summarized in Figure 4, they can be
described as the following:
1. Forward Active region (BE junction is forward biased while BC junction is reversed
biased). This region is used in order to make the circuit working in the linear amplifier
circuits.
2. Saturation region (Both BE and BC junctions are forward biased).
3. Cutoff region (Both BE and BC junctions are reversed biased).
4. Reverse Active region (BE junction is reversed biased while BC junction is forward
biased). It works just like the Forward Active region but with poor current gain 𝛽𝑅 .
 Electronics Lab. (0903368) 4 Experiment 5

𝑉𝐵𝐶

𝛽𝑅

𝑉𝐶 < 𝑉𝐵 < 𝑉𝐸 𝑉𝐸 < 𝑉𝐵

𝑉𝐶 < 𝑉𝐵 𝑉𝐵𝐸

𝛽𝐹

𝑉𝐸 > 𝑉𝐵 𝑉𝐶 > 𝑉𝐵 > 𝑉𝐸

𝑉𝐶 > 𝑉𝐵

Figure 4: Summarization of the four regions of operation for a BJT transistor.

The DC-load line is a linear relationship between the collector current (𝐼𝐶 ) and the collector –
emitter voltage (𝑉𝐶𝐸 ). The intersection between the load line and the i-v characteristics of the
transistor is the quiescent point (𝑄-point) where the transistor works.

Caution:
The operation of the BJT transistors is very strongly affected by heat, which is usually internally
generated due to the power dissipation. It is advisable, therefore, to limit transistor heating in
this experiment by starting data runs with maximum current and voltage then decrease the
voltages. (Note: Transistor currents change due to heating effects even when supply voltages are
kept constant).

Important Current relationships:

𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 (1)
𝐼𝐶 = 𝛽 ∙ 𝐼𝐵 (only applied in the active modes) (2)
𝛽
𝛼= (3)
1+𝛽
𝛼
𝛽= (4)
1−𝛼
 Electronics Lab. (0903368) 5 Experiment 5

Procedure

Equipments & Part List

 Oscilloscope.  Two DC power supplies.

 Function Generator (FG).  Project Breadboard.
 Two Digital Multi-Meters (DMM).  Connection wires and coaxial cables
 Resistors of values (𝟏𝒌, 𝟏𝟎𝟎𝒌) Ω.  BC107 transistor or equivalent.
 Two Digital Multi-Meters.

Part-A: BJT Lead Identifications using the DMM

1- Insert the three leads of the BC107 BJT to three different locations on the breadboard.
2- Randomly, label the leads of the transistor as x, y, z.
3- Turn on the DMM:
a) Configure it to measure .
b) Plug a black test lead into the Common (−) 4𝑚𝑚 banana socket.
c) Plug a red test lead into the V (+) 4𝑚𝑚 banana socket.
d) Connect the red lead to the terminal (x).
e) Connect the black lead to the terminal (y).
f) Read the display of the DMM and record it in Table 1 in the answer sheet.
4- Repeat steps (d-f) for the other terminals according to Table 1.
5- According to your data:
a) Determine which lead of the BJT is the base (B), collector (C) and emitter (E).
b) Find out whether the BJT is NPN or PNP.
c) Record all the results in Table 1.

Note: You had to know that 𝑽𝑩𝑬 > 𝑽𝑩𝑪 in order to work in the Forward Active mode
 Electronics Lab. (0903368) 6 Experiment 5

Part-B : i-v Characteristics of a CE BJT Circuit

1- Construct the circuit shown in Figure 5 by using the BC107 BJT, 𝑅𝐵 = 100𝑘Ω and 𝑅𝐶 =
1𝑘Ω.

Figure 5: Common emitter single resistor biasing circuit.

2- Adjust the DC power supply that called 𝑽𝑪𝑪 to 𝟏𝟓 𝑣𝑜𝑙𝑡.

3- Adjust the DC power supply that called 𝑽𝑩𝑩 to 𝟔 𝑣𝑜𝑙𝑡.
4- Use the DMM to measure 𝑽𝑩𝑬 , 𝑽𝑪𝑬 , 𝑰𝑪 , and 𝑰𝑩 , then record all the readings in Table 2 in the
answer sheet.
5- Change the value of the DC supply 𝑽𝑩𝑩 as shown in Table 2 then repeat step 4.
6- When you finish all values of 𝑽𝑩𝑩 , change the DC supply 𝑽𝑪𝑪 as shown in Table 2 and repeat
steps (4-5).
7- When finished, switch OFF the two DC power supplies.
8- Calculate the Q -point values (𝑰𝑩𝑸 , 𝑰𝑪𝑸 and 𝑽𝑪𝑬𝑸 ) at 𝑽𝑪𝑪 = 𝟏𝟓𝑽 and 𝑽𝑩𝑩 = 𝟐𝑽.
9- Find out the Load line equation at 𝑽𝑪𝑪 = 𝟏𝟓𝑽.
10- From your data in Table 2, plot the experimental the BJT output characteristics (𝑰𝑪 vs. 𝑽𝑪𝑬 )
at 𝑉𝐵𝐵 = 4𝑉.
Now, on the same graph:
a) Draw the load line.
b) Determine the Q-point (Operating Point).
c) Determine the four regions of operations.
11- From your data in Table 2, plot the input characteristics (𝑰𝑩 vs. 𝑽𝑩𝑬 ) at 𝑽𝑪𝑪 = 𝟏𝟓𝑽.
12- From the experimental results, explain how 𝑫𝑪 (𝒉𝑭𝑬 ) is varying with respect to the collector
current values?
13- From your data in Table 2, what are the measured values for both 𝑉𝐵𝐸 (𝑆𝐴𝑇) and 𝑉𝐶𝐸 (𝑆𝐴𝑇).
14- On the basis of the measurements you made, what is the material of the transistor? How did
you arrive to this conclusion?
15- Explain how the Common Emitter (CE) characteristics would be different if  was
increased?
 Electronics Lab. (0903368) 7 Experiment 5

16- Explain how the Common Emitter (CE) output characteristics would be affected by a
decrease in temperature.
17- According to the reading in Table 2, what is the value of the supply (𝑽𝑩𝑩 ) that make the
transistor enter saturation directly using 𝑽𝑪𝑪 = 𝟏𝟓𝑽.
18- The metal case of the given transistor represents what terminal? B, C, or E? why?
19- If we used a PNP transistor instead of a NPN, what modifications should you make on the
circuit give in Figure 5? What about voltages and currents? Answer with full details.
 The University of Jordan
School of Engineering
Electrical Engineering Department

Electronics Lab Report

0903368

Experiment No.: ______ Student Group #: ______

Experiment Title: _________________________________________

Students Name:

1) _________________________________________

2) _________________________________________

3) _________________________________________

4) _________________________________________
 Electronics Lab. (0903368) 2 Experiment 5

Report of Experiment 5

Bipolar Junction Transistor (BJT) Characteristics

Part-A: BJT terminals identification by using a DMM

Table 1: BJT Transistor testing records.

DMM leads + x, - y + x, - z - x, + y - x, + z + y, - z - y, + z
 test (V)
From the measurements above, summarize the type and terminals of the given BJT.
Transistor type Base (B) Collector (C) Emitter (E)

Part-B Current-Voltage Characteristics of a CE BJT

8- Calculate the 𝑄-point values (𝑰𝑩𝑸 , 𝑰𝑪𝑸 and 𝑽𝑪𝑬𝑸 ) at 𝑽𝑪𝑪 = 𝟏𝟓𝑽 and 𝑽𝑩𝑩 = 𝟐𝑽.

.....................................................................

.....................................................................

9- Find out the Load line equation for the circuit at 𝑽𝑪𝑪 = 𝟏𝟓𝑽.

.....................................................................

.....................................................................

10- From your data in Table 2, plot the experimental output collector characteristics (𝑰𝑪 vs. 𝑽𝑪𝑬 )
at 𝑉𝐵𝐵 = 4𝑉. On the same graph:
a) Draw the load line.
b) Determine the Q-point (Operating Point).
c) Determine the 4 regions of operations.
 Electronics Lab. (0903368) 3 Experiment 5

11- From your data in Table 2, plot the input characteristics (𝑰𝑩 vs. 𝑽𝑩𝑬 ) at 𝑽𝑪𝑪 = 𝟏𝟓𝑽.
Electronics Lab. (0903368) 4 Experiment 5

Table 2: Common Emitter i-v characteristic records.

𝑽𝑩𝑩 (𝑽) 7V 𝟔𝑽 𝟒𝑽 𝟐𝑽 𝟎𝑽
𝑉𝐵𝐸 (𝑉)

𝑽𝑪𝑪 = 𝟏𝟓𝑽
𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
𝑉𝐵𝐸 (𝑉)
𝑽𝑪𝑪 = 𝟏𝟐𝑽

𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
𝑉𝐵𝐸 (𝑉)
𝑽𝑪𝑪 = 𝟗𝑽

𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
𝑉𝐵𝐸 (𝑉)
𝑽𝑪𝑪 = 𝟔𝑽

𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
𝑉𝐵𝐸 (𝑉)
𝑽𝑪𝑪 = 𝟒𝑽

𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
𝑉𝐵𝐸 (𝑉)
𝑽𝑪𝑪 = 𝟐𝑽

𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
𝑉𝐵𝐸 (𝑉)
𝑽𝑪𝑪 = 𝟎𝑽

𝐼𝐵 (𝐴)
𝐼𝐶 (𝑚𝐴)
𝑉𝐶𝐸 (𝑉)
𝐷𝐶
 Electronics Lab. (0903368) 5 Experiment 5

12- From the experimental results, explain how 𝑫𝑪 (𝒉𝑭𝑬 ) is varying with respect to the collector
current values?

.....................................................................

.....................................................................

.....................................................................

.....................................................................

13- From your data in Table 2, what are the measured values for both 𝑉𝐵𝐸 (𝑆𝐴𝑇) and 𝑉𝐶𝐸 (𝑆𝐴𝑇).

.....................................................................

.....................................................................

14- On the basis of the measurements you made, what material is the transistor made of? How
did you arrive at this conclusion?

.....................................................................

15- Explain how the CE characteristics would be different if  were increased?

.....................................................................

.....................................................................

16- Explain qualitatively how the CE input characteristics would be affected by a decrease and
increase in temperature.

.....................................................................

.....................................................................

17- According to the reading in Table 2, what is the value of the supply 𝑽𝑩𝑩 that makes the
transistor enters saturation directly using 𝑽𝑪𝑪 = 𝟏𝟓𝑽.

.....................................................................

.....................................................................

18- The metal case of the given transistor represents what terminal? B, C, or E? why?

.....................................................................

.....................................................................
 Electronics Lab. (0903368) 6 Experiment 5

19- If we used a PNP transistor instead of a NPN, what modifications should you make on the
circuit give in Figure 5? What about voltages and currents? Answer with full details

.....................................................................

.....................................................................

.....................................................................

.....................................................................

.....................................................................

.....................................................................

.....................................................................

.....................................................................