MPSA13, MPSA14

MPSA14 is a Preferred Device

Darlington Transistors
NPN Silicon

Features
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• Pb−Free Packages are Available*

COLLECTOR 3

MAXIMUM RATINGS BASE

2
Rating Symbol Value Unit
Collector −Emitter Voltage VCES 30 Vdc
Collector −Base Voltage VCBO 30 Vdc
EMITTER 1
Emitter −Base Voltage VEBO 10 Vdc
Collector Current − Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.5 W TO−92

Derate above 25°C 12 mW/°C CASE 29
STYLE 1
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range
12 1
2
THERMAL CHARACTERISTICS 3 3
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit
BULK PACK TAPE & REEL
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/mW AMMO PACK

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/mW

Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

MPS
A1x
AYWW G
G

x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use
Reference Manual, SOLDERRM/D. and best overall value.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

April, 2007 − Rev. 4 MPSA13/D
 MPSA13, MPSA14

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CES 30 − Vdc
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current ICBO − 100 nAdc
(VCB= 30 Vdc, IE = 0)

Emitter Cutoff Current IEBO − 100 nAdc

(VEB= 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 10 mAdc, VCE = 5.0 Vdc) MPSA13 5,000 −
MPSA14 10,000 −
(IC = 100 mAdc, VCE = 5.0 Vdc) MPSA13 10,000 −
MPSA14 20,000 −
Collector −Emitter Saturation Voltage VCE(sat) − 1.5 Vdc
(IC = 100 mAdc, IB = 0.1 mAdc)

Base −Emitter On Voltage VBE(on) − 2.0 Vdc

(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2) fT MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 125 −
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. fT = |hfe| S ftest.

ORDERING INFORMATION
Device Package Shipping†
MPSA13 TO−92 5000 Units / Bulk
MPSA13G TO−92 5000 Units / Bulk
(Pb−Free)

MPSA13RLRA TO−92 2000 / Tape & Reel

MPSA13RLRAG TO−92 2000 / Tape & Reel
(Pb−Free)

MPSA13RLRMG TO−92 2000 / Ammo Pack

(Pb−Free)

MPSA13RLRPG TO−92 2000 / Ammo Pack

(Pb−Free)

MPSA13ZL1G TO−92 2000 / Ammo Pack

(Pb−Free)

MPSA14G TO−92 5000 Units / Bulk

(Pb−Free)

MPSA14RLRAG TO−92 2000 / Tape & Reel

(Pb−Free)

MPSA14RLRPG TO−92 2000 / Ammo Pack

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 MPSA13, MPSA14

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)

500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS ≈ 0 1.0
200
0.7
en, NOISE VOLTAGE (nV)

i n, NOISE CURRENT (pA)

0.5
100 IC = 1.0 mA
10 mA 0.3
50 0.2

100 mA 100 mA
0.1
20
0.07
IC = 1.0 mA 10 mA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 2. Noise Voltage Figure 3. Noise Current

200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

BANDWIDTH = 10 Hz TO 15.7 kHz

12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)

10
70 IC = 10 mA 10 mA
8.0
50
100 mA
6.0
30 100 mA
4.0 IC = 1.0 mA
20
1.0 mA
2.0

10 0
1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW) RS, SOURCE RESISTANCE (kW)

Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure

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 MPSA13, MPSA14

SMALL−SIGNAL CHARACTERISTICS

20 4.0
VCE = 5.0 V

|h fe |, SMALL−SIGNAL CURRENT GAIN

TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)

7.0 Cibo
1.0
5.0 Cobo 0.8
0.6

3.0 0.4

2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance Figure 7. High Frequency Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

200k 3.0
TJ = 125°C TJ = 25°C
100k
2.5
70k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN

50k 25°C

30k 2.0
20k
1.5
10k
7.0k
−55 °C
5.0k 1.0
VCE = 5.0 V
3.0k
2.0k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.6 −1.0
RθV, TEMPERATURE COEFFICIENTS (mV/°C)

*APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C

TJ = 25°C
1.4 −2.0 *RqVC FOR VCE(sat)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 1000 −55 °C TO 25°C

1.2 −3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 −4.0
qVB FOR VBE
0.8 −5.0 −55 °C TO 25°C
VCE(sat) @ IC/IB = 1000

0.6 −6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

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 MPSA13, MPSA14

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
0.02 ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)

Figure 12. Thermal Response

1.0k
700 1.0 ms
500
IC, COLLECTOR CURRENT (mA)

300 TC = 25°C 100 ms

TA = 25°C
200 1.0 s

100
70
50
30
CURRENT LIMIT
20 THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

FIGURE A

tP

PP PP

t1

1/f
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP

Design Note: Use of Transient Thermal Resistance Data

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 MPSA13, MPSA14

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D D 0.40 0.54
X X G 2.40 2.80
G J 0.39 0.50
J K 12.70 −−−
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 −−−
SECTION X−X V 3.43 −−−
1 N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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