08.305 Electronics Circuits I (T)
08.305 Electronics Circuits I (T)
PART A
1. Explain how a low pass RC circuit can be used as an integrator. Write the condition to
get perfect integration.
2. Obtain 3dB frequency of high pass circuit.
3. For the clamping circuit shown, sketch the output waveform.
7. What is the need for bias stabilization? Explain anyone biasing technique of BJT.
8. Explain drain to gate bias for an enhancement MOSFET.
9. For an n-channel FET, the parameters are IDSS=20mA, Vp=-2.5V and λ=0. What is the
value of VGS when ID=1.2mA and the transistor is biased in the saturation region?
10. Draw the common base T equivalent circuit with source and load resistance.
PART B
Module I
11. A full wave rectifier (2 diode circuit) uses a load resistance of 1.2K. The transformer
secondary voltage from centre tap to ne end is 30V, 50Hz. For the diodes, forward
resistance is 10Ω and reverse resistance infinity. Calculate a) dc and rms load current b)
dc power output c) rectification efficiency d) % regulation e) Transformer secondary
rating.
12. Explain the working of a series voltage regulator. Obtain an expression for its output
voltage. How do you provide short circuit protection in the circuit?
13. a) Design a circuit to obtain the following transfer characteristics.
b) Plot the response of a low pass RC circuit to produce a periodic square wave after
deriving necessary equation.
Module II
14. Draw the circuit diagram of common source amplifier. Draw its DC & AC equivalent
circuits. Derive a mathematical expression for Av, Ro, Ri
15. Determine the operating point of the FET.
16. Design an RC coupled amplifier for a gain of 50. Assume VCC=10V, VBE=0.6V, β=100,
IC=2mA, VCE=50%of VCC.
Module III
17. Analyse the high frequency response of CD amplifier & derive the expression for
voltage gain.
18. For a class B push pull power amplifier, VCC=2V, N2=2N1, RL=20Ω and the transistors
have β=20. The input is a sinusoid for the maximum output signal at Vm=VCC.
Determine a) output signal power b) collector dissipation in each transistor.
19. Find the midband gain and the upper 3-dB frequency of the common emitter amplifier
shown in figure. VCC=VEE=10V, I=1mA, RB=100KΩ, RC=8KΩ, Rsig=5KΩ, β0=100,
VA=100V, Cµ=1pF, fT=800MHz.