Power Transistors

2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
Unit: mm
■ Features
● High forward current transfer ratio hFE which has satisfactory linearity
5.0±0.1
● Low collector to emitter saturation voltage VCE(sat)
10.0±0.2 1.0
● Allowing supply with the radial taping

4.2±0.2
■ Absolute Maximum Ratings

13.0±0.2
(TC=25˚C) 90°

2.5±0.2
Parameter Symbol Ratings Unit
1.2±0.1 C1.0
Collector to 2SD2137 60 2.25±0.2
VCBO V 0.65±0.1
base voltage 2SD2137A 80

Solder Dip
18.0±0.5
0.35±0.1 1.05±0.1

Collector to 2SD2137 60 0.55±0.1

VCEO V 0.55±0.1
emitter voltage 2SD2137A 80
Emitter to base voltage VEBO 6 V
C1.0 1 2 3
Peak collector current ICP 5 A
Collector current IC 3 A
2.5±0.2 2.5±0.2
Collector power TC=25°C 15 1:Base
PC W 2:Collector
dissipation Ta=25°C 2 3:Emitter
Junction temperature Tj 150 ˚C MT4 Type Package

Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SD2137 VCE = 60V, VBE = 0 100
ICES µA
current 2SD2137A VCE = 80V, VBE = 0 100
Collector cutoff 2SD2137 VCE = 30V, IB = 0 100
ICEO µA
current 2SD2137A VCE = 60V, IB = 0 100
Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA
Collector to emitter 2SD2137 60
VCEO IC = 30mA, IB = 0 V
voltage 2SD2137A 80
hFE1* VCE = 4V, IC = 1A 70 250
Forward current transfer ratio
hFE2 VCE = 4V, IC = 3A 10
Base to emitter voltage VBE VCE = 4V, IC = 3A 1.8 V
Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A 1.2 V
Transition frequency fT VCE = 5V, IC = 0.2A, f = 10MHz 30 MHz
Turn-on time ton 0.3 µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
Storage time tstg 2.5 µs
VCC = 50V
Fall time tf 0.2 µs

*h Rank classification
FE1

Rank Q P
hFE1 70 to 150 120 to 250

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.

1
Power Transistors 2SD2137, 2SD2137A

PC — Ta IC — VCE VCE(sat) — IC
20 6 100

Collector to emitter saturation voltage VCE(sat) (V)

TC=25˚C IC/IB=8
(1) TC=Ta
Collector power dissipation PC (W)

(2) Without heat sink 30

(PC=2.0W) 5
IB=100mA

Collector current IC (A)

15 90mA 10
80mA
(1) 4 70mA
60mA 3
50mA
10 3 40mA 1
TC=100˚C
30mA
20mA 0.3 25˚C
2

5 0.1
10mA
1
0.03 –25˚C
(2)

0 0 0.01
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.03 0.1 0.3 1 3 10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

IC — VBE hFE — IC fT — IC
6 1000 1000
VCE=4V VCE=4V VCE=5V
f=10MHz
Forward current transfer ratio hFE

TC=100˚C TC=25˚C

Transition frequency fT (MHz)

5 300 300
25˚C
Collector current IC (A)

–25˚C
4 100 100

3 30 30
TC=100˚C

2 25˚C 10 10

1 3 3
–25˚C

0 1 1
0 0.4 0.8 1.2 1.6 2.0 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Base to emitter voltage VBE (V) Collector current IC (A) Collector current IC (A)

Cob — VCB ton, tstg, tf — IC Area of safe operation (ASO)

1000 100 100
IE=0 Pulsed tw=1ms Non repetitive pulse
Collector output capacitance Cob (pF)

f=1MHz Duty cycle=1% TC=25˚C

TC=25˚C 30 IC/IB=10 (IB1=–IB2) 30
300 VCC=50V
Switching time ton,tstg,tf (µs)

TC=25˚C
Collector current IC (A)

10 10
ICP
100 tstg
3 3
IC t=1ms

30 1 1 10ms

ton DC
0.3 0.3
10 tf
0.1 0.1
2SD2137A
2SD2137

3
0.03 0.03

1 0.01 0.01
1 3 10 30 100 0 1 2 3 4 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V)

2
Power Transistors 2SD2137, 2SD2137A

Rth(t) — t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
Thermal resistance Rth(t) (˚C/W)

(2) With a 50 × 50 × 2mm Al heat sink

1000

100
(1)
(2)
10

0.1
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)