MBR(F,B)20H100CTG Series

New Product Vishay Semiconductors

formerly General Semiconductor

Dual High-Voltage Schottky Rectifiers

Rev. Voltage 90 to 100V
Forward Current 20A

ITO-220AB (MBRF20H90CTG, MBRF20H100CTG)

0.405 (10.27) 0.188 (4.77)
0.383 (9.72) 0.172 (4.36)
0.110 (2.80)
0.100 (2.54)

TO-220AB (MBR20H90CTG, MBR20H100CTG) 0.140 (3.56) 0.131 (3.39)

DIA.
DIA.
0.130 (3.30) 0.122 (3.08)
0.415 (10.54) MAX. 0.185 (4.70)
0.175 (4.44)
0.154 (3.91) 0.600 (15.5) 0.676 (17.2)
0.370 (9.40) 0.055 (1.39) 0.580 (14.5) 0.646 (16.4)
0.148 (3.74)
0.360 (9.14) 0.045 (1.14) 0.350 (8.89)
0.113 (2.87) 0.330 (8.38)
PIN
0.103 (2.62)
1 2 3
0.145 (3.68)
0.135 (3.43) 0.191 (4.85)
0.603 (15.32) 0.171 (4.35)
0.410 (10.41) 0.573 (14.55)
0.635 (16.13) 0.350 (8.89)
0.390 (9.91) 0.560 (14.22) 0.110 (2.80)
0.330 (8.38) 0.060 (1.52)
0.625 (15.87) 0.530 (13.46) 0.100 (2.54)
PIN PIN 1
1 2 3 1.148 (29.16) PIN 2

1.118 (28.40) PIN 3

0.160 (4.06)
0.110 (2.79)
0.140 (3.56)
0.100 (2.54) 0.037 (0.94)
0.027 (0.69) 0.022 (0.55)
0.560 (14.22) 0.105 (2.67) 0.014 (0.36)
PIN 1 PIN 2 0.530 (13.46) 0.095 (2.41)

CASE 0.205 (5.20)

PIN 3
Dimensions in inches 0.195 (4.95)
0.105 (2.67) and (millimeters)
0.095 (2.41) 0.035 (0.90)

0.104 (2.65)
0.028 (0.70) 0.022 (0.56) TO-263AB (MBRB20H90CTG, MBRB20H100CTG)
0.014 (0.36)
0.096 (2.45) 0.411 (10.45)
0.205 (5.20) 0.190 (4.83)
0.195 (4.95) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40)
0.045 (1.14)
0.42
0.245 (6.22)
(10.66)
MIN
K
Mounting Pad
0.33
Layout (8.38) 0.360 (9.14)
0.055 (1.40)
0.047 (1.19)
TO-263AB 0.320 (8.13) 0.624 (15.85)
0.63 1 K 0.591 (15.00)
2
(17.02)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940) 0.021 (0.53)
PIN 1
0.027 (0.686) 0.014 (0.36)
0.08 PIN 2 K - HEATSINK
(2.032) 0.105 (2.67) 0.140 (3.56)
0.12
(3.05) 0.095 (2.41) 0.110 (2.79)
0.24 0.205 (5.20)
(6.096) 0.195 (4.95)

Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
Features molded plastic body
• Plastic package has Underwriters Laboratory Terminals: Plated leads, solderable per
Flammability Classification 94V-0 MIL-STD-750, Method 2026
• Dual rectifier construction, positive center tap High temperature soldering guaranteed:
• Metal silicon junction, majority carrier conduction 250°C/10 seconds, 0.25" (6.35mm) from case
• Low power loss, high efficiency Polarity: As marked
• Guardring for overvoltage protection Mounting Position: Any
• For use in low voltage, high frequency inverters, Mounting Torque: 10 in-lbs maximum
free wheeling, and polarity protection applications Weight: 0.08oz., 2.24g

Document Number 88856 www.vishay.com

13-Sep-02 1
MBR(F,B)20H100CTG Series
Vishay Semiconductors
formerly General Semiconductor

Maximum Ratings (TC = 25°C unless otherwise noted)

Parameter Symbol MBR20H90CTG MBR20H100CTG Unit

Maximum repetitive peak reverse voltage VRRM 90 100 V
Working peak reverse voltage VRWM 90 100 V
Maximum DC blocking voltage VDC 90 100 V
Maximum average forward rectified current Total device 20
IF(AV) A
at TC = 155°C Per leg 10
Peak forward surge current
8.3ms single half sine-wave superimposed IFSM 150 A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ IRRM 0.5 A
Voltage rate of change (rated VR) dv/dt 10,000 V/µs
Operating junction and storage temperature range TJ, TSTG –65 to +175 °C
4500 (1)
RMS Isolation voltage (MBRF type only) from terminals
VISOL 3500 (2) V
to heatsink with t = 1 second, RH ≤ 30%
1500 (3)

Electrical Characteristics (TC = 25°C unless otherwise noted)

Parameter Symbol Typ. Value Max. Value Unit
Maximum instantaneous at IF = 10A, TJ = 25°C 0.80 0.85
forward voltage per leg(4) at IF = 10A, TJ = 125°C 0.64 0.70
VF V
at IF = 20A, TJ = 25°C 0.87 0.93
at IF = 20A, TJ = 125°C 0.74 0.80
Maximum reverse current per leg TJ = 25°C – 3.5 µA
IR
at working peak reverse voltage (Note 4) TJ = 125°C – 4.5 mA

Thermal Characteristics (TC = 25°C unless otherwise noted)

Parameter Symbol MBR MBRF MBRB Unit
Typical thermal resistance per leg RθJC 2.0 5.8 2.0 C/W
O

Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle

Ordering Information
Product Case Package Code Package Option
MBR20H90CTG, MBR20H100CTG TO-220AB 45 Anti-Static tube, 50/tube, 2K/carton
MBRF20H90CTG, MBRF20H100CTG ITO-220AB 45 Anti-Static tube, 50/tube, 2K/carton
31 13” reel, 800/reel, 4.8K/carton
MBRB20H90CTG, MBRB20H100CTG TO-263AB 45 Anti-Static tube, 50/tube, 2K/carton
81 Anti-Static 13” reel, 800/reel, 4.8K/carton

www.vishay.com Document Number 88856

2 13-Sep-02
 MBR(F,B)20H100CTG Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (T A = 25°C unless otherwise noted)

Fig. 2 — Maximum Non-Repetitive

Fig. 1 — Forward Derating Curve Peak Forward Surge Current Per Leg
24 175
TJ = TJ max.
8.3ms Single Half Sine-Wave

Peak Forward Surge Current (A)

150 (JEDEC Method)
Average Forward Current (A)

20

MBR
16 MBRB 125

12 100

8 75

MBRF
50
4

0 25
0 25 50 75 100 125 150 175 1 10 100

Case Temperature (¡C)

Fig. 3 — Typical Instantaneous Fig. 4 — Typical Reverse

Forward Characteristics Per Leg Characteristics Per Leg
100 10000
IF -- Instantaneous Forward Current (A)

TJ = 175°C TJ = 150°C
1000
10 TJ = 150°C 125°C
Reverse Current ( A)
IR -- Instantaneous

100 100°C

1.0 10
TJ = 125°C

TJ = 100°C 1
25°C
0.1
TJ = 25°C
0.1

TJ = -- 40°C
0.01 0.01
0.1 0.3 0.5 0.7 0.9 1.1 20 40 60 80 100
Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)

Fig. 5 — Typical Junction Capacitance Fig. 6 — Typical Transient

Per Leg Thermal Impedance Per Leg
1000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)

10

100

10
0.1 1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t -- Pulse Duration (sec.)

Document Number 88856 www.vishay.com

13-Sep-02 3
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.