MJW18020

NPN Silicon Power

Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power http://onsemi.com
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
30 AMPERES
configurations.
1000 VOLTS BVCES
Features
450 VOLTS BVCEO, 250 WATTS
• High and Excellent Gain Linearity
• Fast and Very Tight Switching Times Parameters tsi and tfi
• Very Stable Leakage Current due to the Planar Structure
• High Reliability
• Pb−Free Package is Available*

MAXIMUM RATINGS 1
2
3 TO−247
Rating Symbol Value Unit
CASE 340L
Collector−Emitter Sustaining Voltage VCEO 450 Vdc
Collector−Emitter Breakdown Voltage VCES 1000 Vdc
Collector−Base Voltage VCBO 1000 Vdc
MARKING DIAGRAM
Emitter−Base Voltage VEBO 9.0 Vdc
Collector Current − Continuous IC 30 Adc
− Peak (Note 1) 45

Base Current − Continuous IB 6.0 Adc MJW18020

− Peak (Note 1) 10
AYWWG
Total Power Dissipation @ TC = 25_C PD 250 W
Derate Above 25_C 2.0 W/_C
Operating and Storage Junction TJ, Tstg −65 to +150 _C 1 BASE 3 EMITTER
Temperature Range
2 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit A = Assembly Location
Thermal Resistance, Junction−to−Case RqJC 0.5 _C/W Y = Year
WW = Work Week
Thermal Resistance, Junction−to−Ambient RqJA 50 _C/W G = Pb−Free Package
Maximum Lead Temperature for Soldering TL 275 _C
Purposes: 1/8” from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum ORDERING INFORMATION
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Device Package Shipping
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. MJW18020 TO−247 30 Units/Rail

MJW18020G TO−247 30 Units/Rail

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

January, 2012 − Rev. 3 MJW18020/D
 MJW18020

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) 450 − − Vdc
(IC = 100 mAdc, IB = 0)

Collector Cutoff Current ICEO − − 100 mAdc

(VCE = Rated VCEO, IB = 0)

Collector Cutoff Current (VCE = Rated VCES, VEB = 0) ICES − − 100 mAdc
(TC = 125°C) 500
Emitter Cutoff Current IEBO − − 100 mAdc
(VCE = 9 Vdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain (IC = 3 Adc, VCE = 5 Vdc) hFE 14 34
(TC = 125°C) − 30 −
(IC = 10 Adc VCE = 2 Vdc) 8 16
B=23 ptr 10mA
(TC = 125°C) 5 14 −
(IC = 20 Adc VCE = 2 Vdc) 5.5 9 −
(TC = 125°C) 4 7 −
(IC = 10 mAdc VCE = 5 Vdc) 14 25 −
Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) VBE(sat) − 0.97 1.25 Vdc
(IC = 20 Adc, IB = 4 Adc) 1.15 1.5

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 Adc, IB = 2 Adc) − 0.2 0.6
(TC = 125°C) − 0.3 −
(IC = 20 Adc, IB = 4 Adc) − 0.5 1.5
(TC = 125°C) − 0.9 2.0
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product fT − 13 − MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

Output Capacitance Cob − 300 500 pF

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Input Capacitance Cib − 7000 9000 pF

(VEB = 8.0)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms)

Turn−On Time (IC = 10 Adc, IB1 = IB2 = 2 Adc, tOn − 540 750 ns
Vcc = 125 V)

Storage Time ts − 4.75 6 ms

Fall Time tf − 380 500 ns
Turn−Off Time tOff − 5.2 6.5 ms
Turn−On Time (IC= 20 Adc, IB1 = IB2 = 4 Adc, tOn − 965 1200 ns
Vcc = 125 V)
Storage Time ts − 2.9 3.5 ms
Fall Time tf − 350 500 ns
Turn−Off Time tOff − 3.25 4 ms
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 mH)
Fall Time (IC = 10 Adc, IB1 = IB2 = 2 Adc) tfi − 142 250 ns

Storage Time tsi − 4.75 6 ms

Crossover Time tc − 320 500 ns

Fall Time (IC = 20 Adc, IB1 = IB2 = 4 Adc) tfi − 350 500 ns

Storage Time tsi − 3.0 3.5 ms

Crossover Time tc − 500 750 ns

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 MJW18020

TYPICAL CHARACTERISTICS

100 100

TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C

HFE, DC CURRENT GAIN

HFE, DC CURRENT GAIN

TJ = −20°C TJ = −20°C
10 10

VCE = 2.0 V VCE = 5.0 V

1.0 1.0
0.01 0.1 1.0 10 100 0.01 0.1 1.0 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain, VCE = 2.0 V Figure 2. DC Current Gain, VCE = 5.0 V

100.0 100.0
Ic/Ib = 5.0 Ic/Ib = 10
VCE, VOLTAGE (VOLTS)

VCE, VOLTAGE (VOLTS)

10.0 10.0

1.0 1.0
TJ = −20°C
TJ = −20°C
TJ = 125°C
0.1 TJ = 125°C 0.1

TJ = 25°C
TJ = 25°C
0.0 0.0
0.001 0.01 0.1 1.0 10 100 0.001 0.01 0.1 1.0 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 3. Typical Collector−Emitter Saturation Figure 4. Typical Collector−Emitter Saturation

Voltage, IC/IB = 5.0 Voltage, IC/IB = 10

10.0 10.0
Ic/Ib = 5.0 Ic/Ib = 10
VBE, VOLTAGE (VOLTS)

VBE, VOLTAGE (VOLTS)

TJ = −20°C TJ = −20°C
TJ = 25°C TJ = 25°C
1.0 1.0

TJ = 125°C TJ = 125°C

0.1 0.1
0.001 0.01 0.1 1.0 10 100 0.001 0.01 0.1 1.0 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 5. Typical Base−Emitter Saturation Figure 6. Typical Base−Emitter Saturation

Voltage, IC/IB = 5.0 Voltage, IC/IB = 10

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 MJW18020

TYPICAL CHARACTERISTICS

100000 100.00

IC, COLLECTOR CURRENT (AMPS)

1.0 ms
DC Extended SOA
C, CAPACITANCE (pF)

10.00
10000 10 ms
5 ms
Cib
1 ms
1.00

1000
0.10
Cob

100 0.01
1 10 100 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Capacitance Figure 8. Forward Bias Safe Operating Area

40
IC, COLLECTOR CURRENT (AMPS)

TC v 125°C
Ic/Ib > 4
30 LC = 500 mH

20

−1.5 V

10 −5 V
VBE = 0 V

0
0 200 400 600 800 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 9. Reverse Bias Safe Operating Area

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 MJW18020

PACKAGE DIMENSIONS

TO−247
CASE 340L−02
ISSUE E

−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L
DIM MIN MAX MIN MAX
A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3
0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
F 2 PL H
G
D 3 PL
0.25 (0.010) M Y Q S

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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