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MJE13009
12 AMPERE NPN SILICON POWER TRANSISTOR

Description
The MJE13009 is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
TO-220AB

Specification Features
• VCEO(sus)=400V
• Reverse Bias SOA with Inductive Loads @TC=100°C
• Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)
• 700V Blocking Capability
• SOA and Switching Applications Information

Absolute Maximum Ratings

Characteristic Symbol Max. Unit
Collector-Emitter Voltage VCEO(sus) 400 Vdc
Collector-Base Voltage VCBO 700 Vdc
Emitter-Base Voltage VEBO 9 Vd
Collector Current-Continuous IC 12 Adc
Collector Current-Peak* ICM 24 Adc
Base Current-Continuous IB 6 Adc
Base Current-Peak* IBM 12 Adc
Emitter Current-Continuous IE 18 Adc
Emitter Current-Peak IEM 36 Adc
Total Power Dissipation@TA=25°C 2 Watts
PD
Derate above 25°C 16 mW/°C
Total Power Dissipation@TC=25°C 100 Watts
PD
Derate above 25°C 800 mW/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance, Junction to Case RθJC 1.25 °C/W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Maximum Lead Temperature for Soldering Purposes:
TL 275 °C
1/8” from Case for 5 Seconds

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Electrical Characteristics (TA=25°C unless otherwise noted)

Characteristic Symbol Min. Typ. Max. Unit

• Off Characteristics

Collector-Emitter Sustaining Voltage

VCEO(sus) 400 - - Vdc
(IC=10mA, IB=0)
Collector Cutoff Current
(VCEV=Rated Value, VBE(off)=1.5Vdc ICEV - - 1 mAdc
(VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100°C) - - 5
Emitter Cutoff Current (VEB=9Vdc, IC=0) IEBO - - 1 mAdc

• Second Breakdown

Second Breakdown Collector Current with base forward biased See Figure 1
Is/b
Clamped Inductive SOA with Base Reverse Biased See Figure 2

• On Characteristics

DC Current Gain (IC=0.5Adc, VCE=5Vdc) *hFE1 15 - -

DC Current Gain (IC=5Adc, VCE=5Vdc) *hFE2 13 - 22
DC Current Gain (IC=8Adc, VCE=5Vdc) *hFE3 8 - -
DC Current Gain (IC=12Adc, VCE=5Vdc) *hFE4 5 - -
Collector-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc) *VCE(sat)1 - - 1
(IC=8Adc, IB=1.6Adc) *VCE(sat)2 - - 1.5 Vdc
(IC=12Adc, IB=3Adc) *VCE(sat)3 - - 3
(IC=8Adc, IB=1.6Adc, TC=100°C) *VCE(sat)4 - - 2
Base-Emitter Saturation Voltage
(IC=5Adc, IB=1Adc) *VBE(sat)1 - - 1.3
Vdc
(IC=8Adc, IB=1.6Adc) *VBE(sat)2 - - 1.6
(IC=8Adc, IB=1.6Adc, TC=100°C) *VBE(sat)3 - - 1.5

• Dynamic Characteristics

Current Gain Bandwidth Product

fT 4 - - MHz
(IC=500mAdc, VCE=10Vdc, f=1MHz)
Output Capacitance
Cob - 180 - pF
(VCB=10Vdc, IE=0, f=0.1MHz)

• Switching Characteristics

Delay Time td - 0.06 0.1 uS

(VCC=125Vdc, IC=8A)
Rise Time tr - 0.45 1 uS
IB1=IB2=1.6A, tp=25uS
Storage Time ts - 1.3 3 uS
Duty Cycle≤1%
Fall Time tf - 0.2 0.7 uS

• Inductive Load, Clamped

Voltage Storage Time (IC=8Adc, Vclamp=300Vdc) tsv - 0.92 2.3 uS

Crossover Time (IB1=1.6Adc,VBE(off)=5Vdc, TC=100°C) tc - 0.12 0.7 uS
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

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Characteristics Curve

Current Gain & Collector Current Saturation Voltage & Collector Current
100 10
VCE=5V
o
VBE(sat) @ IC=5IB
75 C
o
125 C

Saturation Voltage (V)

o
25 C
o o
25 C
hFE

10 1 75 C

o
125 C

1 0.1
0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
Collector Current (A) Collector Current (A)

Saturation Voltage & Collector Current Saturation Voltage & Collector Current
10 10
VCE(sat) @ IC=4IB VCE(sat) @ IC=5IB
Saturation Voltage (V)...

Saturation Voltage (V)

1 1 o
75 C
o
125 C
o
125 C

o
75 C
0.1 0.1

o
o 25 C
25 C

0.01 0.01
0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
Collector Current (A) Collector Current (A)

Capacitance & Reverse-Biased Voltage Switching Time & Collector Current

1000 10
VC=125V, IC=5IB1 , IB1=-IB2
Switching Time (us)...
Capacitance (pF)

100
Tstg

Ton
10

Tf

1 0.1
0.1 1 10 100 0.1 1 10 100
Reverse-Biased Voltage (V) Collector Current (A)

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Safe Ooperating Area

100
Collector Current-Ic (A)...

10
100ms

1s

1ms

0.1
1 10 100 1000
Forward Voltage-VCB (V)

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TO-220AB Dimension

DIM Min. Max.

A 5.58 7.49
A B F B 8.38 8.90
E
C 4.40 4.70
C D 1.15 1.39
D
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H H - *16.25
M K I - *3.83
I J 3.00 4.00
3
N K 0.75 0.95
G 2
L 2.54 3.42
1 M 1.14 1.40
Tab N - *2.54
P O O 12.70 14.27
L J P 14.48 15.87
*: Typical, Unit: mm

3-Lead TO-220AB
Plastic Package
HSMC Package Code: E

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Soldering Methods for HSMC’s Products

1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%

2. Reflow soldering of surface-mount devices

Figure 1: Temperature profile

tP
TP Critical Zone
TL to TP
Ramp-up

TL
Tsmax tL
Temperature

Tsmin

tS
Preheat
Ramp-down

25
t 25oC to Peak
Time

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

o
Average ramp-up rate (TL to TP) <3 C/sec <3oC/sec
Preheat
- Temperature Min (Tsmin) 100oC 150oC
- Temperature Max (Tsmax) 150oC 200oC
- Time (min to max) (ts) 60~120 sec 60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
Time maintained above:
- Temperature (TL) 183oC 217oC
- Time (tL) 60~150 sec 60~150 sec
o o
Peak Temperature (TP) 240 C +0/-5 C 260oC +0/-5oC
Time within 5oC of actual Peak
10~30 sec 20~40 sec
Temperature (tP)
Ramp-down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes

3. Flow (wave) soldering (solder dipping)

Products Peak temperature Dipping time

Pb devices. 245 C ±5 Co o
10sec ±1sec
Pb-Free devices. 260 C ±5 Co o
10sec ±1sec

MJE13009