Scribd Logo
Upload

Welcome to Scribd!

  • 121 views

    Semiconductor Electronics PDF

    Uploaded by

    Shikhar Bajpai
    1. The document discusses different types of semiconductors such as intrinsic, extrinsic, P-type, and N-type based on their conductivity and doping. It explains how doping affects the number of holes and electrons. 2. Diodes and transistors are discussed. For diodes, topics covered include PN junctions, forward and reverse biasing, and rectification. For transistors, common-emitter configuration and its characteristics such as input/output voltages are summarized. 3. Other topics briefly covered include photodiodes, solar cells, logic gates, and amplifiers. Overall the document provides an overview of fundamental semiconductor devices and their working principles in a few sentences.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Semiconductor Electronics PDF

    Uploaded by

    Shikhar Bajpai
    121 views12 pages
    1. The document discusses different types of semiconductors such as intrinsic, extrinsic, P-type, and N-type based on their conductivity and doping. It explains how doping affects the number of holes and electrons. 2. Diodes and transistors are discussed. For diodes, topics covered include PN junctions, forward and reverse biasing, and rectification. For transistors, common-emitter configuration and its characteristics such as input/output voltages are summarized. 3. Other topics briefly covered include photodiodes, solar cells, logic gates, and amplifiers. Overall the document provides an overview of fundamental semiconductor devices and their working principles in a few sentences.

    Original Title

    Semiconductor electronics.pdf

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    1. The document discusses different types of semiconductors such as intrinsic, extrinsic, P-type, and N-type based on their conductivity and doping. It explains how doping affects the number of holes and electrons. 2. Diodes and transistors are discussed. For diodes, topics covered include PN junctions, forward and reverse biasing, and rectification. For transistors, common-emitter configuration and its characteristics such as input/output voltages are summarized. 3. Other topics briefly covered include photodiodes, solar cells, logic gates, and amplifiers. Overall the document provides an overview of fundamental semiconductor devices and their working principles in a few sentences.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    121 views12 pages

    Semiconductor Electronics PDF

    Uploaded by

    Shikhar Bajpai
    1. The document discusses different types of semiconductors such as intrinsic, extrinsic, P-type, and N-type based on their conductivity and doping. It explains how doping affects the number of holes and electrons. 2. Diodes and transistors are discussed. For diodes, topics covered include PN junctions, forward and reverse biasing, and rectification. For transistors, common-emitter configuration and its characteristics such as input/output voltages are summarized. 3. Other topics briefly covered include photodiodes, solar cells, logic gates, and amplifiers. Overall the document provides an overview of fundamental semiconductor devices and their working principles in a few sentences.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 12

    emcond uctossTIMANESFton Geamenium

    Fo Condyetoa - Conducty *_
    T
    |Fos Semiconducto Cond vc4y a T
    Valente Sand n hch es aae
    PefPa
    ConductioNand empy bend above
    Valerte band.
    fo btdden band o neay EP
    Enesgy 8P Sl Valence band e
    Cond vC+for bon
    Tosulatnhasge enegY P
    r domond eV
    Condvcloh Valente band 4 onduc on
    band oVelap. Peg ble enesgy
    emConductos Modeaqte ee °P
    0.ev
    SIon 11 ev Cesmenom
    A vatany Ceattdin Te
    Valence bnd ateaCh plce
    &hee Gh electonwad phasen
    bfore movin9 to the(onducdfon
    band.TK? vcanty ls called ho le a

    Tatstntc Semicondot fo
    Pure emconducto
    SPmSfml Con ductox e 4 hole
    both cond494u +e CUAents
    De hh= n? intaind Con
    no. of
    holf< Pntairstc (haage
    e cAae dent
    Ene Tem
    boltzmann ons
    ExtafnfcSemicordvetos

    Tnpuae senicondue to(y dopir)


    e) ntnkeSenYconductox-
    Pentavalet Tmpusy f< adda
    (.Gaoup 1S emen e
    Nott -Sth ValenCe e
    of imputy odom
    aequies Pttle ere
    enestM Doros

    01 y in ie OoS ev irs?) ato


    ESTIMATTE /CoRds
    Ho leove S atom a n d

    1-tDor
    e VaterCP
    and

    nen= n e Majosity
    oleg mroft Casafeas
    )P-+8pe emconducto-
    Hvelet mpusity added.
    C >oup 13 element) fee
    hole

    Conducton
    bond

    Vulence } AcceptoS
    ACCepto
    band o
    ne
    holes madoltu CasieaJ
    elecdon minoatty Canafes
    P- juntton Di od Deple+on
    a
    Deple 4ton Layes
    Ston dPEfvzfon ++
    ofmajo»ty ckag P T A
    Canie4
    Fo
    goscd ioing
    4ve dernial of batfejP-Segi
    -ve tesmiral connected to e f
    ote Que toMoleatea electaon
    aPpied teld hole
    move to waads JUnctfon
    alko e move$ VV
    a dfaRoppo t e to elenafcf°e ld)

    Tn fooad biasing idA


    othe deple+ion egion decsPases
    SoJundPon dfode of sess a Lo
    fon h e cuaaent +o
    hestta ne
    flo afoauaad bla
    CUanent w ) be in
    Ttln m A
    Lou Rectane
    EfecYve valr
    Knee VeHoeV ofPa1entfa
    heshold Voltga V-Vg
    00
    ESTIMATE
    Revese ainq

    P-egion -ve naegfon+Ue


    DepletYon heye incsease

    4fuson cuent OPil be n AA


    Cfective Nalue of poten 1: V+Va
    HP ResistantP
    eakdown VolHecp
    Vol Hoqp
    V
    p Avclance baklan

    I ( HA
    bde a a Rec4es
    Y (onve u9hich
    A ecHfea devce
    nds
    voHa9
    an l4es nutYn9 Cuaent (oa
    CUAPntloa Vek
    a daec+ UAdPaecd¥orm)
    I DAIDIT CEMENT PRIMER
    Ma lf Wave Rec4Re
    dtode A
    OU+p+
    AC9npu+
    voltage
    A.
    T+paodoce CUAPA oalh in hel
    cle
    ful Wave Rect¬fea,
    TnAAA

    Cusen+ 3odutedN frn Complete ycle

    Zene ode-as peal dfole uskYed


    beaKdou9A,
    oth P-Sde 4nstde a heouy
    doped
    sed a a Voltage Reyulaton
    o Volage Stoab?linea
    VnTR+V2 A
    T-I2t L
    ESTIMATE
    T-V2
    R=ViVz
    T2
    Opt oelecd>ork oites
    ED (Yght entNhg dlode)
    doped dex +o
    On uad. biasir,
    Meav
    Dode P máde up fgal10 m
    pho&phtde (GaP) 7 Iun Gsenic(aA
    gaIn-ayaok hospkide (Ca As P)
    Photodlode -

    T A $pecia YPe o photo detecto


    v6d fo dedecing o pttal signals
    T Aee bfoeed
    photodode
    Conduc}utty_of p-n June4fon
    fCafaea w fo te a 4e n fnteniy
    O Jgr filhg or + (oaen
    rWhen
    o ne g t t o o n pn dPode ,ceta9n
    ex Ccle CdKCua,sent.w

    CMCNT DDIAACD
    sed T a aeadîras of puncheand
    4 tapee
    b)Tn photodedecalon fon optBeal gnal
    ) Utd a 6Ungle, gla,Am, n
    aenodule+fon ooptl
    baced pinctprl
    on paincip
    SoSolan Cel
    Photovoltafc atfe.
    Vo V
    TsSko+ CEruttcuaaent
    VoOp Rn (acur+ Voltan
    o-le T-V ChasattenigiN of qr
    D ?
    FoAWed biased

    Cot V

    JUnHTon dlo de
    T a P-
    Change fn te m pe duae doe+o
    f e c t 1 the ovenG1
    heatng
    éAfc+ick ofp-n
    yT ckasacd
    Junctfon
    TRANSISTOR

    St2eC>E>B Efta Base tollectea


    DopingE>CB
    ESTIMATE Co.
    Commen-Emittea Contuaqt Pon

    ce
    Trpu Nee Oupt
    AC
    Seg Sin)
    1TnmA)
    ( a) Knég Volag
    Vlov
    Vce1

    Saturoon
    Reg1en TSoAA
    -Ta=25
    Bose-tHe V8¬
    voltag Callecta - e m l i Hea

    vo 1tage
    Acte Regioncut-osf a«gYon
    sed fo
    Cmpl94ca1fon VeeVec
    Puapos
    APAesr
    Ta cu of e gto n both B(
    - C eanînaS fFoh.s u4o3,S
    Ae eveale biastd.
    olotUAoAfOn Seionbo th E-
    -C teaminals aae 0Naad

    Tn ac+ue aegfon, E-6 4ex minol


    o wand biased 4 -C
    teairels am euese - bastd.

    Ra

    Vce-VIRL
    ACVoltegGoin (A)
    A-ATcxRout = AJ xKou
    Rout
    AT R
    R? AB
    A e( AY x 3esistarce gon)
    B-Cuwt gein (Ac) *n (ommen-eni-tanenp
    CUaent gin(AC) Yn Common- bode ampea
    ESTIMATE
    AC Power Goin
    AC (USsP} gein
    AC Vol4oge goin
    AG PoenP(A)Au
    e(C) x (A)x sasiata
    Poea8 (A)x Reisanee aain)
    Taansconductante (9m) Ont+
    AT

    RR
    ote-Tke out pu4 yoltoge sigro)
    8 0 ov4+ 0t phase oth
    the Prpu+ Voltag signo Tn
    the Common-enmte ampliffe ,
    V o Vo Itage Aafn of an amp19ffea
    94 in4P4 ordtant+ and then
    decaeasew} he fheque ry te
    na FNAMFL PAINT CEMENT PRIMER
    kogc Geles
    A Y=
    T Cete -

    OR a q t e A
    Y-A+B
    AND Cae D
    NoR Gatf A -
    Y-A+B
    e9A19DGate =AB
    XOR Cote
    Y AB)
    Y Ar3+ A G)
    opertter ) A+ )A-A=Fo
    At A6 A+8

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy