MITSUBISHI GATE TURN-OFF THYRISTORS

FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE

FG1000BV-90DA OUTLINE DRAWING Dimensions in mm

GATE (WHITE)

390 ± 8

AUXILIARY CATHODE
CONNECTOR (RED)

φ 47 φ 3.5 DEPTH 2.2 ± 0.2

0.4 MIN
CATHODE
TYPE NAME

26 ± 0.5
● ITQRM Repetitive controllable on-state current ..........1000A
● IT(AV) Average on-state current .......................400A

0.4 MIN
φ 47 ANODE

● VDRM Repetitive peak off state voltage ..................4500V φ 75 MAX φ 3.5 DEPTH 2.2 ± 0.2
● Anode short type

APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
90DA
VRRM Repetitive peak reverse voltage 17 V
VRSM Non-repetitive peak reverse voltage 17 V
VR(DC) DC reverse voltage 17 V
VDRM Repetitive peak off-state voltage+ 4500 V
VDSM Non-repetitive peak off-state voltage+ 4500 V
VD(DC) DC off-state voltage+ 3600 V
+ : VGK = –2V

Symbol Parameter Conditions Ratings Unit

ITQRM Repetitive controllable on-state current VDM = 3375V, Tj = 125°C, CS = 0.7µF, LS = 0.3µH 1000 A
IT(RMS) RMS on-state current 630 A
IT(AV) Average on-state current f = 60Hz, sine wave θ = 180°, Tf = 70°C 400 A
ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz 8.4 kA
I2t Current-squared, time integration One cycle at 60Hz 2.9 × 105 A2s
diT/dt Critical rate of rise of on-state current VD = 2250V, IGM = 20A, Tj = 125°C 1000 A/µs
VFGM Peak forward gate voltage 10 V
VRGM Peak reverse gate voltage 17 V
IFGM Peak forward gate current 60 A
IRGM Peak gate reverse current 500 A
PFGM Peak forward gate power dissipation 240 W
PRGM Peak reverse gate power dissipation 15 kW
PFG(AV) Average forward gate power dissipation 45 W
PRG(AV) Average reverse gate power dissipation 100 W
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +150 °C
— Mounting force required Recommended value 13 12 ~ 15 kN
— Weight Standard value 530 g

Aug.1998
 MITSUBISHI GATE TURN-OFF THYRISTORS

FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min Typ Max
VTM On-state voltage Tj = 125°C, ITM = 1000A, Instantaneous measurment — — 4.0 V
IRRM Repetitive peak reverse current Tj = 125°C, VRRM Applied — — 100 mA
IDRM Repetitive peak off-state current Tj = 125°C, VDRM Applied, VGK = –2V — — 100 mA
IRG Reverse gate current Tj = 125°C, VRG = 17V — — 100 mA
dv/dt Critical rate of rise of off-state voltage Tj = 125°C, VD = 2250V, VGK = –2V 1000 — — V/µs
tgt Turn-on time Tj = 125°C, ITM = 1000A, IGM = 20A, VD = 2250V — — 10 µs

tgq Turn-off time Tj = 125°C, ITM = 1000A, VDM = 3375V, diGQ/dt = –30A/µs — — 20 µs
VRG = 17V, CS = 0.7µF, LS = 0.3µH
IGQM Peak gate turn-off current — 330 — A
VGT Gate trigger voltage — — 1.5 V
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
IGT Gate trigger current — — 2500 mA
Rth(j-f) Thermal resistance Junction to fin — — 0.03 °C/W

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE ON-STATE CURRENT

104 10
7 Tj = 125°C
SURGE ON-STATE CURRENT (kA)

5
ON-STATE CURRENT (A)

3 8
2
103
7 6
5
3
2
4
102
7
5
2
3
2
101 0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 100 2 3 5 7 101 2 3 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM THERMAL IMPEDANCE

CHARACTERISTIC
(JUNCTION TO FIN)
GATE CHARACTERISTICS
100 2 3 5 7101
102 0.050
7
5 0.045
THERMAL IMPEDANCE (°C/ W)

3 0.040
2 VFGM = 10V PFGM = 240W
GATE VOLTAGE (V)

0.035
101
7 PFG(AV) = 45W 0.030
5
3 VGT = 1.5V
0.025
2
0.020
100
7 0.015
5 Tj = 25°C
IFGM = 60A 0.010
3 IGT = 2500mA
2 0.005
10–1 0
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100

GATE CURRENT (mA) TIME (S)

Aug.1998
 MITSUBISHI GATE TURN-OFF THYRISTORS

FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE FIN TEMPERATURE VS.

CHARACTERISTICS AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE) (SINGLE-PHASE HALF WAVE)
2000 140
ON-STATE POWER DISSIPATION (W)

1750 130
θ θ

FIN TEMPERATURE (°C)

180°
1500 120° 120
360° 360°
RESISTIVE, 90° RESISTIVE,
1250 INDUCTIVE 60° 110 INDUCTIVE
LOAD LOAD
1000 θ = 30° 100

750 90

500 80

250 70
θ = 30° 60° 90° 120° 180°
0 60
0 100 200 300 400 0 100 200 300 400

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE FIN TEMPERATURE VS.

CHARACTERISTICS AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE) (RECTANGULAR WAVE)
2000 140
ON-STATE POWER DISSIPATION (W)

270° DC
1750 180° 130
θ
FIN TEMPERATURE (°C)

120° 120
1500 90° 360°
60° 110 RESISTIVE,
1250 100 INDUCTIVE
θ = 30° LOAD
1000 90

750 80
θ 70
500
360° 60 θ = 30° 60° 120° 270°
RESISTIVE, 90° 180° DC
250 INDUCTIVE 50
LOAD
0 40
0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

GATE TRIGGER CURRENT VS. TURN ON TIME, TURN ON DELAY TIME

JUNCTION TEMPERATURE VS. TURN ON GATE CURRENT
TURN ON TIME tgt, TURN ON DELAY TIME td (µs)

(TYPICAL) (TYPICAL)
8000 10.0
VD = 5 ~ 20V IT = 1000A, VD = 2250V
GATE TRIGGER CURRENT (mA)

IT = 25 ~ 200A diT/dt = 500A/µs

7000
HALF SINE WAVE diG/dt = 10A/µs
8.0 Tj = 125°C
6000 tgt

5000 6.0
4000

3000 4.0

td
2000
2.0
1000

0 0
–60 –20 20 60 100 140 0 10 20 30 40 50

JUNCTION TEMPERATURE (°C) TURN ON GATE CURRENT (A)

Aug.1998
 MITSUBISHI GATE TURN-OFF THYRISTORS

FG1000BV-90DA
HIGH POWER INVERTER USE
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) PRESS PACK TYPE

TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)

TURN OFF TIME, TURN OFF STORAGE TIME TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL) (TYPICAL)
25 50
VD = 2250V VD = 2250V
VDM = 3375V VDM = 3375V
diGQ/dt = –30A/µs IT = 1000A
20 VRG = 17V 40 VRG = 17V
CS = 0.7µF tgq CS = 0.7µF
LS = 0.3µH LS = 0.3µH
15 Tj = 125°C 30 Tj = 125°C

ts
10 20
tgq

5 10
ts

0 0
200 400 600 800 1000 10 20 30 40 50

TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)

TURN OFF GATE CURRENT TURN OFF GATE CURRENT VS.

VS. TURN OFF CURRENT RATE OF RISE OF GATE CURRENT
(TYPICAL) (TYPICAL)
500 500
TURN OFF GATE CURRENT (A)

TURN OFF GATE CURRENT (A)

400 400

300 300

200 VD = 2250V 200 VD = 2250V

VDM = 3375V VDM = 3375V
diGQ/dt = –30A/µs IT = 1000A
100 VRG = 17V 100 VRG = 17V
CS = 0.7µF CS = 0.7µF
LS = 0.3µH LS = 0.3µH
Tj = 125°C Tj = 125°C
0 0
200 400 600 800 1000 10 20 30 40 50

TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)

TURN ON SWITCHING ENERGY TURN OFF SWITCHING ENERGY

(MAXIMUM) (MAXIMUM)
1.6 3.0
diT/dt = 300A/µs
SWITCHING ENERGY Eon (J/P)

SWITCHING ENERGY Eoff (J/P)

1.4
200A/µs 2.5
1.2

1.0 100A/µs 2.0

0.8

0.6 1.5 VD = 2250V

VD = 2250V VDM = 3375V
IGM = 25A diGQ/dt = –30A/µs
0.4 VRG = 17V
diG/dt = 10A/µs 1.0
CS = 0.7µF CS = 0.7µF
0.2 RS = 5Ω LS = 0.3µH
Tj = 125°C Tj = 125°C
0 0.5
200 400 600 800 1000 1200 200 400 600 800 1000

TURN ON CURRENT (A) TURN OFF CURRENT (A)

Aug.1998