VRRM = 200 V

Rectifier Diode
IFAVM = 7110 A
IFRMS
IFSM
=
=
11200 A
55000 A
5SDD 71B0200
VF0 = 0.74 V
rF = 0.026 mΩ
Doc. No. 5SYA1132-02 July 06

• Optimized for high current rectifiers

• Very low on-state voltage
• Very low thermal resistance

Blocking
VRRM Repetitive peak reverse voltage 200 V Half sine wave, tP = 10 ms, f = 50 Hz
VRSM Maximum peak reverse voltage 300 V Half sine wave, tP = 10 ms
IRRM Repetitive peak reverse current ≤ 50 mA Tj = 170 °C VR = VRRM

Mechanical
FM Mounting force min. 20 kN
max. 24 kN
a Acceleration:
Device unclamped 50 m/s2
Device clamped 200 m/s2
m Weight 0.14 kg
DS Surface creepage distance 4 mm
Da Air strike distance 4 mm

Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
 5SDD 71B0200

On-state
IFAVM Max. average on-state current 7110 A Half sine wave, Tc = 85 °C
IFRMS Max. RMS on-state current 11200 A
IFSM Max. peak non-repetitive surge current 55000 A tp = 10 ms Before surge
60000 A tp = 8.3 ms Tj = 170 °C
∫I2dt
2
Max. surge current integral 15100 kA s tp = 10 ms After surge:

15000 kA2s tp = 8.3 ms VR ≈ 0V

VF max Maximum on-state voltage ≤ 1.05 V IF = 5000 A Tj = 25 °C
VF0 Threshold voltage 0.74 V Approximation for Tj = 170 °C
rF Slope resistance 0.026 mΩ IF = 5 - 15 kA

Thermal characteristics
Tj Operating junction temperature range -40...170 °C
Tstg Storage temperature range -40…170 °C
Rth(j-c) Thermal resistance ≤ 20 K/kW Anode side cooled
junction to case
≤ 20 K/kW Cathode side cooled
≤ 10 K/kW Double side cooled FM = 20…24 kN
Rth(c-h) Thermal resistance ≤ 10 K/kW Single side cooled
case to heatsink
≤ 5 K/kW Double side cooled

4
Z th ( j - c )(t) = ∑ R i (1 - e - t / τ i )
ZthJC [K/kW]
12
Double sided cooling Fm = 20...24 kN

10
i =1
8
i 1 2 3 4
6
Ri (K/kW) 5.28 3.30 0.87 0.55
4
τi (s) 0.07 0.039 0.0034 0.00013
5SDD 71B0200

2 FM = 20… 24 kN
0 Double side cooled
10-3 10-2 10-1 0
t [s] 10

Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4 Doc. No. 5SYA1132-02 July 06
 5SDD 71B0200

On-state characteristics Surge current characteristics

IF [A] IFSM [kA] ∫ i2dt [MA2s]

5SDD 71B0200
20000 100 22

18000 Tj = 170°C
Tj = 170°C
90 20
16000 IFSM

14000
80 18
min. max.
12000

10000 70 16

8000
60 14
6000

4000 ∫i2t
5SDD 71B0200

50 12
2000

0 40 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 101 102
VF [V] t [ms]

Fig. 3 Forward current vs. forward voltage (min. Fig. 4 Surge current and fusing integral vs. pulse
and max. values). width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.

Current load capability

I D ( kA ) ID vs. ED, 1000 Hz square wave, TC = 100 °C
16
n = 50 pulses
n = 100 pulses
15
n = 500 pulses
n = 1000 pulses
14

13

12

11
5SDD 71B0200

10

1 10 Duty cycle ED (%) 100

Fig. 5 DC-output current with single-phase centre tap

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 3 of 4 Doc. No. 5SYA1132-02 July 06
 5SDD 71B0200

Current load capacity, cont.

ID ( k A ) ID vs. ED, 1000 Hz square-wave, Th = 60 °C
22
n = 50 pulses
n = 100 pulses
20
n = 500 pulses
n = 1000 pulses
18

16

14

5SDD 71B0200
12

10
1 10 Duty cycle ED (%) 100
Fig. 6 DC-output current with single-phase centre tap

ID
- +

Fig. 7 Definition of ED for typical welding Fig. 8 Definition of ID for single-phase centre tap
sequence

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1132-02 July 06

ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors