Untitled
Untitled
Untitled
V23990-P540-C01-PM
datasheet
flow PIM 0 1200 V / 15 A
Target Applications
● Industrial Drives
● Embedded Generation Schematic
Types
● V23990-P540-A01-PM
● V23990-P540-C01-PM
Maximum Ratings
T j = 25°C, unless otherwise specified
Rectifier Diode
Repetitive peak reverse voltage V RRM 1600 V
Inverter Switch
Collector-emitter break down voltage V CE 1200 V
t SC T j ≤ 150 °C 10 µs
Short circuit ratings
V CC V GE = 15 V 1200 V
Inverter Diode
Peak Repetitive Reverse Voltage V RRM T j = 25 °C 1200 V
Brake Switch
Collector-emitter break down voltage V CE 1200 V
t SC T j ≤ 150 °C 10 µs
Short circuit ratings
V CC V GE = 15 V 1200 V
Brake Diode
Peak Repetitive Reverse Voltage V RRM T j = 25 °C 1200 V
Thermal Properties
Storage temperature T stg -40…+125 °C
Isolation Properties
Isolation voltage V is DC voltage t=2s 4000 V
Rectifier Diode
25 0,8 1,19 1,8
Forward voltage VF 30 V
125 1,17
25 0,91
Threshold voltage (for power loss calc. only) V to 30 V
125 0,79
25 8
Slope resistance (for power loss calc. only) rt 30 mΩ
125 11
25 0,05
Reverse current Ir 1500 mA
150 1,1
phase-change
Thermal resistance junction to sink R th(j-s) material 1,25 K/W
λ = 3,4 W/mK
Inverter Switch
Gate emitter threshold voltage V GE(th) V CE = V GE 0,0006 25 5 5,8 6,5 V
25 214
Turn-on delay time t d(on)
125 217
25 19
Rise time tr
125 25
ns
25 326
Turn-off delay time t d(off)
R goff = 64 Ω 125 394
±15 600 15
R gon = 64 Ω 25 124
Fall time tf
125 184
25 1,36
Turn-on energy loss E on
125 1,81
mWs
25 1,14
Turn-off energy loss E off
125 1,71
Input capacitance C ies 1090
phase-change
Thermal resistance junction to case R th(j-s) material 1,19 K/W
λ = 3,4 W/mK
Inverter Diode
25 1 1,73 2,4
Diode forward voltage VF 15 V
125 1,73
25 16
Peak reverse recovery current I RRM A
125 17
25 322
Reverse recovery time t rr ns
125 485
25 1,86
Reverse recovered charge Q rr R gon = 64 Ω ±15 600 15 µC
125 3,11
25 221
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 85
25 0,65
Reverse recovered energy E rec mWs
125 1,18
phase-change
Thermal resistance junction to case R th(j-s) material 1,66 K/W
λ = 3,4 W/mK
Brake Switch
Gate emitter threshold voltage V GE(th) V CE = V GE 0,0003 25 5 5,8 6,5 V
25 131
Turn-on delay time t d(on)
125 132
25 14
Rise time tr
125 20
ns
25 254
Turn-off delay time t d(off)
R goff = 64 Ω 125 315
±15 600 8
R gon = 64 Ω 25 99
Fall time tf
125 177
25 0,57
Turn-on energy loss E on
125 0,77
mWs
25 0,55
Turn-off energy loss E off
125 0,82
Input capacitance C ies 605
phase-change
Thermal resistance junction to case R th(j-s) material 1,51 K/W
λ = 3,4 W/mK
Brake Diode
25 0,8 1,75 2,2
Diode forward voltage VF 7,5 V
125 1,81
Reverse leakage current Ir 1200 25 250 μA
25 10
Peak reverse recovery current I RRM A
125 11
25 281
Reverse recovery time t rr ns
125 442
25 0,98
Reverse recovered charge Q rr R gon = 64 Ω ±15 600 8 µC
125 0,98
25 126
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 60
25 0,36
Reverse recovery energy E rec mWs
125 0,67
phase-change
Thermal resistance junction to case R th(j-s) material 2,20 K/W
λ = 3,4 W/mK
Thermistor
Rated resistance R 25 22000 Ω
I C (A)
60 60
50 50
40 40
30 30
20 20
10 10
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
V CE (V) V CE (V)
At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V
40
15
30
10
20
5
10
Tj = Tjmax - 25 °C Tj = 25 °C
Tj = Tjmax - 25 °C
Tj = 25 °C
0 0
0 2 4 6 8 10 12 0 1 2 3 4
V GE (V) V F (V)
At At
tp = 250 μs tp = 250 μs
V CE = 10 V
E (mWs)
Eon High T
2,5
4 Eon High T
Eon Low T
2,0
Eon Low T
3
Eoff High T
Eoff High T 1,5
2 Eoff Low T
Eoff Low T 1,0
1
0,5
0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) R G (Ω)
E (mWs)
Erec
1,2
0,9
0,9
Tj = 25°C Erec Tj = 25°C
0,6
Erec
0,6
0,3
0,3
0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R G (Ω
tdoff
µ s)
t (µ
t (µs)
tdoff tdon
tdon
tf
tf
0,10 0,10
tr tr
0,01 0,01
0,00 0,00
0 5 10 15 20 25 I (A) 30 0 30 60 90 120 150
C Ω)
R G (Ω
rr (µ
rr (µ
Tj = 25°C trr
Tj = 25°C trr
0,4 0,4
0,2 0,2
0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R gon (Ω
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V
5 5
µ C)
µ C)
Q rr(µ
Q rr(µ
Tj = Tjmax -25°C
Qrr
3 3
Tj = 25°C Qrr
Tj = 25°C
2 2
Qrr
1 1
0 0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R gon (Ω
At
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V
Tj = Tjmax -25°C
I rrM (A)
IRRM
40
Tj = 25°C IRRM
15
30
10
20
Tj = Tjmax- 25°C
5 Tj = 25°C IRRM
IRRM
10
0 0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R gon (Ω
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V
µ s)
µ s)
1000 3500
di rec / dt (A/µ
di rec / dt (A/µ
dI0/dt dI0/dt
dIrec/dt
dIrec/dt
3000
800
2500
600
2000
1500
400
1000
200
500
0 0
0 5 10 15 20 25 30 0 30 60 90 120
I C (A) Ω ) 150
R gon (Ω
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V
100 100
D = 0,5 D = 0,5
0,2 0,2
10-1 10-1
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0,000 0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100 t p (s) 10110 10-5 10-4 10-3 10-2 10-1 100
t p (s) 10110
At At
D = tp/T D = tp/T
R th(j-s) = 1,19 K/W R th(j-s) = 1,66 K/W
I C (A)
P tot (W)
35
120
30
25
90
20
60
15
10
30
0 0
0 50 100 150 T s (oC) 200 0 50 100 150 T s (oC) 200
At At
Tj = 150 °C Tj = 150 °C
V GE = 15 V
I F (A)
80
30
70
25
60
50 20
40 15
30
10
20
5
10
0 0
0 50 100 150 T s (oC) 200 0 50 100 150 T s (oC) 200
At At
Tj = 150 °C Tj = 150 °C
V GE (V)
I C (A)
18
1
3
240 V
10
16
960 V
14
10mS 100uS
1mS
102 12
10
DC 100mS
101
8
4
100
0
10-1 0 20 40 60 80 100 Q (nC) 120
100 101 102 103 V CE (V) g
At At
D = single pulse IC = 15 A
Ts = 80 ºC
V GE = ±15 V
Tj = T jmax
I sc (A)
125
12
100
75
50
3
25
0 0
12 13 14 15 16 17 12 14 16 18 20
V GE(V) V GE (V)
At At
V CE = 1200 V V CE ≤ 1200 V
Tj ≤ 150 ºC Tj = 150 ºC
I C = f(V CE)
40
I C (A)
35
I C MAX
30
I c MODULE
25
I c CHIP
20
15 V CE MAX
10
0
0 200 400 600 800 1000 1200 1400
V CE (V)
At
Tj = T jmax - 25 ºC
I C (A)
35 35
30 30
25 25
20 20
15 15
10 10
5 5
0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5
At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V
I F (A)
8
30
20
10
2
Tj = Tjmax-25°C
Tj = Tjmax-25°C Tj = 25°C Tj = 25°C
0 0
0 2 4 6 8 10 V GE (V) 12 0 1 2 3 V F (V) 4
At At
tp = 250 μs tp = 250 μs
V CE = 10 V
E (mWs)
Eon
1,5
1,2
Eoff
Eon
1,2 Tj = Tjmax -25°C
Eon
0,9
Eoff
Eoff Eon
0,9
Tj = 25°C 0,3
0,3
Tj = 25°C
0,0 0,0
0 30 60 90 120 150
0 3 6 9 12
I C (A)
15 Ω)
R G (Ω
Erec
0,8 0,8
Tj = Tjmax - 25°C
Tj = Tjmax -25°C
Erec
0,6 0,6
Erec
Tj = 25°C
0,4 0,4
Erec
Tj = 25°C
0,2 0,2
0,0 0,0
0 3 6 9 12 15 0 30 60 90 120 150
I C (A) Ω)
RG (Ω
µ s)
µ s)
tdoff
t (µ
t (µ
tdoff
tdon
tdon tf
0,10 0,10
tf
tr
tr
0,01 0,01
0,00 0,00
0 3 6 9 12 15 0 30 60 90 120 150
I C (A) Ω)
R G (Ω
Z th(j-s) (K/W)
100 100
D = 0,5
D = 0,5
10-1 0,2 10-1
0,2
0,1
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0,000
0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 102 100 t p (s) 101 10-5 10-4 10-3 10-2 10-1 102 100 t p (s) 101
At At
D = tp/T D = tp/T
R th(j-s) = 1,51 K/W R th(j-s) = 2,20 K/W
I C (A)
80 20
60 15
40 10
20 5
0 0
0 50 100 150 200
T s (oC) 0 50 100 150 T s (oC) 200
At At
Tj = 150 ºC Tj = 150 ºC
V GE = 15 V
I F (A)
20
60
15
40
10
20
5
0 0
0 50 100 150 T s (oC) 200 0 50 100 150 T s (oC) 200
At At
Tj = 150 ºC Tj = 150 ºC
Z th(j-s) (K/W)
70
60
100
50
40
30 D = 0,5
10-1 0,2
20 0,1
0,05
Tj = Tjmax-25°C 0,02
10
0,01
Tj = 25°C 0,005
0 0,000
0,0 0,5 1,0 1,5 2,0 10-2
V F (V) t p (s)
10-5 10-4 10-3 10-2 10-1 100 10110
At At
tp = 250 μs D = tp/T
R th(j-s) = 1,25 K/W
I F (A)
60
100
50
80
40
60
30
40
20
20
10
0 0
0 50 100 150 200 0 50 100 150 200
T s (oC) T s (oC)
At At
Tj = 150 ºC Tj = 150 ºC
figure 1. Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T )
NTC-typical temperature characteristic
24000
Ω)
R (Ω
20000
16000
12000
8000
4000
0
25 50 75 100 125
T (°C)
75 150
IC
VGE
VCE
50 100
tEoff
VGE
tdon
25 50
VCE VCE 3%
VGE 10% IC 10%
0 0 tEon
IC 1%
-25 -50
-0,2 0 0,2 0,4 0,6 0,8 2,6 2,8 3 3,2 3,4 3,6
time (µs) time (µs)
20
Ic IC 10%
VCE IC 10% 0
0 tf
-20 -50
0 0,2 0,4 0,6 0,8 2,8 2,9 3 3,1 3,2 3,3
time (µs)
time (µs)
75
Eon
100
50
50
25
-25 -50
-0,2 0 0,2 0,4 0,6 0,8 2,7 2,9 3,1 3,3 3,5
time (µs) time (µs)
figure 7. FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd fitted
0
IRRM 10%
-50
-100
IRRM 90%
IRRM 100%
-150
2,8 3 3,2 3,4 3,6 3,8
time (µs)
V d (100%) = 600 V
I d (100%) = 15 A
I RRM (100%) = 17 A
t rr = 0,48 μs
tQrr tErec
50 75
Qrr
0 50
-50 25
Prec
-100 0
-150 -25
2,8 3,1 3,4 3,7 4,0 4,3 2,8 3,1 3,4 3,7 4 4,3
time (µs)
time (µs)
Outline
Pin table Pinout variation
Pin X Y Function Modul subtype Not assembled pins
1 25,5 2,7 NTC1 P540-A01 -
2 25,5 0 NTC2 P540-C01 4,5,20
3 22,8 0 -DC
4 20,1 0 BRCG
5 16,2 0 BRCE
6 13,5 0 G6
7 10,8 0 E6
8 8,1 0 G5
9 5,4 0 E5
10 2,7 0 G4
11 0 0 E4
12 0 19,8 G1
13 0 22,5 U
14 7,5 19,8 G2
15 7,5 22,5 V
16 15 19,8 G3
17 15 22,5 W
21 33,5 15 L1
22 33,5 7,5 L2
23 33,5 0 L3
Pinout
Identification
ID Component Voltage Current Function Comment
Packaging instruction
Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
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