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V23990-P540-A01-PM

V23990-P540-C01-PM
datasheet
flow PIM 0 1200 V / 15 A

Features flow 0 17mm housing

● Clip in PCB mounting


● Trench Fieldstop IGBT's for low saturation losses

Target Applications

● Industrial Drives
● Embedded Generation Schematic

Types

● V23990-P540-A01-PM
● V23990-P540-C01-PM

Maximum Ratings
T j = 25°C, unless otherwise specified

Parameter Symbol Condition Value Unit

Rectifier Diode
Repetitive peak reverse voltage V RRM 1600 V

DC forward current I FAV T j = T jmax T s = 80 °C 44 A

Surge (non-repetitive) forward current I FSM 270 A


t p = 10 ms T j = 25 °C
I2t-value I 2t 370 A2s

Power dissipation P tot T j = T jmax T s = 80 °C 56 W

Maximum Junction Temperature T jmax 150 °C

Inverter Switch
Collector-emitter break down voltage V CE 1200 V

DC collector current IC T j = T jmax T s = 80 °C 23 A

Repetitive peak collector current I CRM t p limited by T jmax 45 A

Turn off safe operating area V CE ≤ 1200V, T j ≤ T op max 45 A

Power dissipation P tot T j = T jmax T s = 80 °C 59 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 10 µs
Short circuit ratings
V CC V GE = 15 V 1200 V

Maximum Junction Temperature T jmax 150 °C

copyright Vincotech 1 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Maximum Ratings
T j = 25°C, unless otherwise specified

Parameter Symbol Condition Value Unit

Inverter Diode
Peak Repetitive Reverse Voltage V RRM T j = 25 °C 1200 V

DC forward current IF T j = T jmax T s = 80 °C 20 A

Repetitive peak forward current I FRM t p limited by T jmax 30 A

Power dissipation P tot T j = T jmax T s = 80 °C 42 W

Maximum Junction Temperature T jmax 150 °C

Brake Switch
Collector-emitter break down voltage V CE 1200 V

DC collector current IC T j = T jmax T s = 80 °C 11 A

Repetitive peak collector current I CRM t p limited by T jmax 24 A

Turn off safe operating area V CE ≤ 1200V, T j ≤ T op max 24 A

Power dissipation P tot T j = T jmax T s = 80 °C 46 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 10 µs
Short circuit ratings
V CC V GE = 15 V 1200 V

Maximum Junction Temperature T jmax 150 °C

Brake Diode
Peak Repetitive Reverse Voltage V RRM T j = 25 °C 1200 V

DC forward current IF T j = T jmax T s = 80 °C 12 A

Repetitive peak forward current I FRM t p limited by T jmax 18 A

Power dissipation P tot T j = T jmax T s = 80 °C 32 W

Maximum Junction Temperature T jmax 150 °C

Thermal Properties
Storage temperature T stg -40…+125 °C

Operation temperature under switching condition T op -40…+(T jmax - 25) °C

Isolation Properties
Isolation voltage V is DC voltage t=2s 4000 V

Creepage distance min 12,7 mm

Clearance min 12,7 mm

Comparative tracking index CTI >200

copyright Vincotech 2 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
Characteristic Values datasheet
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Rectifier Diode
25 0,8 1,19 1,8
Forward voltage VF 30 V
125 1,17
25 0,91
Threshold voltage (for power loss calc. only) V to 30 V
125 0,79
25 8
Slope resistance (for power loss calc. only) rt 30 mΩ
125 11
25 0,05
Reverse current Ir 1500 mA
150 1,1
phase-change
Thermal resistance junction to sink R th(j-s) material 1,25 K/W
λ = 3,4 W/mK

Inverter Switch
Gate emitter threshold voltage V GE(th) V CE = V GE 0,0006 25 5 5,8 6,5 V

25 1,35 1,69 2,35


Collector-emitter saturation voltage V CEsat 15 15 V
125 1,92
Collector-emitter cut-off current incl. Diode I CES 0 1200 25 0,002 mA

Gate-emitter leakage current I GES 20 0 25 120 nA

Integrated Gate resistor R gint none Ω

25 214
Turn-on delay time t d(on)
125 217
25 19
Rise time tr
125 25
ns
25 326
Turn-off delay time t d(off)
R goff = 64 Ω 125 394
±15 600 15
R gon = 64 Ω 25 124
Fall time tf
125 184
25 1,36
Turn-on energy loss E on
125 1,81
mWs
25 1,14
Turn-off energy loss E off
125 1,71
Input capacitance C ies 1090

Output capacitance C oss f = 1 MHz 0 25 25 58 pF

Reverse transfer capacitance C rss 48

Gate charge QG 15 960 15 25 80 nC

phase-change
Thermal resistance junction to case R th(j-s) material 1,19 K/W
λ = 3,4 W/mK

Inverter Diode
25 1 1,73 2,4
Diode forward voltage VF 15 V
125 1,73
25 16
Peak reverse recovery current I RRM A
125 17
25 322
Reverse recovery time t rr ns
125 485
25 1,86
Reverse recovered charge Q rr R gon = 64 Ω ±15 600 15 µC
125 3,11
25 221
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 85
25 0,65
Reverse recovered energy E rec mWs
125 1,18
phase-change
Thermal resistance junction to case R th(j-s) material 1,66 K/W
λ = 3,4 W/mK

copyright Vincotech 3 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
Characteristic Values datasheet
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Brake Switch
Gate emitter threshold voltage V GE(th) V CE = V GE 0,0003 25 5 5,8 6,5 V

25 1,35 1,65 2,05


Collector-emitter saturation voltage V CEsat 15 8 V
125 1,85
Collector-emitter cut-off incl diode I CES 0 1200 25 0,05 mA

Gate-emitter leakage current I GES 20 0 25 120 nA

Integrated Gate resistor R gint none Ω

25 131
Turn-on delay time t d(on)
125 132
25 14
Rise time tr
125 20
ns
25 254
Turn-off delay time t d(off)
R goff = 64 Ω 125 315
±15 600 8
R gon = 64 Ω 25 99
Fall time tf
125 177
25 0,57
Turn-on energy loss E on
125 0,77
mWs
25 0,55
Turn-off energy loss E off
125 0,82
Input capacitance C ies 605

Output capacitance C oss f = 1 MHz 0 25 25 37 pF

Reverse transfer capacitance C rss 29

Gate charge QG 15 960 8 25 52 nC

phase-change
Thermal resistance junction to case R th(j-s) material 1,51 K/W
λ = 3,4 W/mK

Brake Diode
25 0,8 1,75 2,2
Diode forward voltage VF 7,5 V
125 1,81
Reverse leakage current Ir 1200 25 250 μA

25 10
Peak reverse recovery current I RRM A
125 11
25 281
Reverse recovery time t rr ns
125 442
25 0,98
Reverse recovered charge Q rr R gon = 64 Ω ±15 600 8 µC
125 0,98
25 126
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 60
25 0,36
Reverse recovery energy E rec mWs
125 0,67
phase-change
Thermal resistance junction to case R th(j-s) material 2,20 K/W
λ = 3,4 W/mK

Thermistor
Rated resistance R 25 22000 Ω

Deviation of R 100 Δ R/R R100 = 1486 Ω 100 -5 +5 %

Power dissipation P 25 210 mW

Power dissipation constant 25 3,5 mW/K

B-value B (25/50) Tol. ±3% 25 K

B-value B (25/100) Tol. ±3% 25 4000 K

Vincotech NTC Reference 25 A

copyright Vincotech 4 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 1. IGBT figure 2. IGBT


Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
70 70
I C (A)

I C (A)
60 60

50 50

40 40

30 30

20 20

10 10

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
V CE (V) V CE (V)

At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. FWD


Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
20 50
I F (A)
I C (A)

40
15

30

10

20

5
10

Tj = Tjmax - 25 °C Tj = 25 °C
Tj = Tjmax - 25 °C
Tj = 25 °C
0 0
0 2 4 6 8 10 12 0 1 2 3 4
V GE (V) V F (V)

At At
tp = 250 μs tp = 250 μs
V CE = 10 V

copyright Vincotech 5 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 5. IGBT figure 6. IGBT


Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
5 3,0
E (mWs)

E (mWs)
Eon High T
2,5
4 Eon High T

Eon Low T
2,0
Eon Low T
3
Eoff High T
Eoff High T 1,5

2 Eoff Low T
Eoff Low T 1,0

1
0,5

0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) R G (Ω)

With an inductive load at With an inductive load at


Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 15 A
R goff = 64 Ω

figure 7. FWD figure 8. FWD


Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
1,8 1,5
E (mWs)

E (mWs)

Tj = Tjmax -25°C Tj = Tjmax -25°C


Erec
1,5
1,2

Erec
1,2
0,9

0,9
Tj = 25°C Erec Tj = 25°C
0,6
Erec
0,6

0,3
0,3

0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R G (Ω

With an inductive load at With an inductive load at


Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 15 A

copyright Vincotech 6 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 9. IGBT figure 10. IGBT


Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1,00 1,00

tdoff

µ s)
t (µ
t (µs)

tdoff tdon
tdon
tf
tf
0,10 0,10

tr tr

0,01 0,01

0,00 0,00
0 5 10 15 20 25 I (A) 30 0 30 60 90 120 150
C Ω)
R G (Ω

With an inductive load at With an inductive load at


Tj = 125 °C Tj = 125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 15 A
R goff = 64 Ω

figure 11. FWD figure 12. FWD


Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
t rr = f(I C) t rr = f(R gon)
0,8 0,8
µ s)
µ s)

rr (µ
rr (µ

Tj = Tjmax -25°C trr


t
t

Tj = Tjmax -25°C trr


0,6 0,6

Tj = 25°C trr

Tj = 25°C trr
0,4 0,4

0,2 0,2

0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R gon (Ω

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V

copyright Vincotech 7 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 13. FWD figure 14. FWD


Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Q rr = f(I C) Q rr = f(R gon)

5 5

µ C)
µ C)

Q rr(µ
Q rr(µ

Tj = Tjmax -25°C Qrr


4 4

Tj = Tjmax -25°C
Qrr
3 3

Tj = 25°C Qrr
Tj = 25°C
2 2
Qrr

1 1

0 0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R gon (Ω
At
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V

figure 15. FWD figure 16. FWD


Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
I RRM = f(I C) I RRM = f(R gon)
20 50
I rrM (A)

Tj = Tjmax -25°C
I rrM (A)

IRRM
40
Tj = 25°C IRRM
15

30

10

20
Tj = Tjmax- 25°C

5 Tj = 25°C IRRM
IRRM
10

0 0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Ω)
R gon (Ω

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V

copyright Vincotech 8 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 17. FWD figure 18. FWD


Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I C) dI 0/dt ,dI rec/dt = f(R gon)

µ s)
µ s)

1000 3500

di rec / dt (A/µ
di rec / dt (A/µ

dI0/dt dI0/dt
dIrec/dt
dIrec/dt
3000
800

2500

600
2000

1500
400

1000

200
500

0 0
0 5 10 15 20 25 30 0 30 60 90 120
I C (A) Ω ) 150
R gon (Ω

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 15 A
R gon = 64 Ω V GE = ±15 V

figure 19. IGBT figure 20. FWD


IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Z th(j-s) (K/W)
Z th(j-s) (K/W)

100 100

D = 0,5 D = 0,5
0,2 0,2
10-1 10-1
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0,000 0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100 t p (s) 10110 10-5 10-4 10-3 10-2 10-1 100
t p (s) 10110

At At
D = tp/T D = tp/T
R th(j-s) = 1,19 K/W R th(j-s) = 1,66 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)


8,1E-02 2,9E+00 7,9E-02 3,0E+00
3,3E-01 3,8E-01 2,5E-01 3,7E-01
6,5E-01 1,0E-01 8,0E-01 8,4E-02
2,3E-01 1,6E-02 3,1E-01 1,7E-02
7,2E-02 1,5E-03 1,2E-01 2,7E-03
1,0E-01 3,8E-04

copyright Vincotech 9 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 21. IGBT figure 22. IGBT


Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
150 40

I C (A)
P tot (W)

35

120
30

25
90

20

60
15

10
30

0 0
0 50 100 150 T s (oC) 200 0 50 100 150 T s (oC) 200

At At
Tj = 150 °C Tj = 150 °C
V GE = 15 V

figure 23. FWD figure 24. FWD


Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
90 35
P tot (W)

I F (A)

80
30

70

25
60

50 20

40 15

30
10

20

5
10

0 0
0 50 100 150 T s (oC) 200 0 50 100 150 T s (oC) 200

At At
Tj = 150 °C Tj = 150 °C

copyright Vincotech 10 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics

figure 25. IGBT figure 26. IGBT


Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
I C = f(V CE) V GE = f(Q g)
20

V GE (V)
I C (A)

18
1
3
240 V
10
16
960 V
14
10mS 100uS
1mS
102 12

10
DC 100mS
101
8

4
100

0
10-1 0 20 40 60 80 100 Q (nC) 120
100 101 102 103 V CE (V) g

At At
D = single pulse IC = 15 A
Ts = 80 ºC
V GE = ±15 V
Tj = T jmax

figure 27. IGBT figure 28. IGBT


Short circuit withstand time as a function of Typical short circuit collector current as a function of
gate-emitter voltage gate-emitter voltage
t sc = f(V GE) Isc = f(V GE)
15 150
t sc (µS)

I sc (A)

125
12

100

75

50

3
25

0 0
12 13 14 15 16 17 12 14 16 18 20
V GE(V) V GE (V)

At At
V CE = 1200 V V CE ≤ 1200 V
Tj ≤ 150 ºC Tj = 150 ºC

copyright Vincotech 11 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Inverter Characteristics
figure 29. IGBT
Reverse bias safe operating area

I C = f(V CE)
40
I C (A)

35

I C MAX
30

I c MODULE
25

I c CHIP
20

15 V CE MAX

10

0
0 200 400 600 800 1000 1200 1400
V CE (V)

At
Tj = T jmax - 25 ºC

Switching mode: 3phase SPWM

copyright Vincotech 12 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Brake Characteristics

figure 1. IGBT figure 2. IGBT


Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
40 40
I C (A)

I C (A)
35 35

30 30

25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. FWD


Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
10 40
I C (A)

I F (A)

8
30

20

10
2
Tj = Tjmax-25°C
Tj = Tjmax-25°C Tj = 25°C Tj = 25°C

0 0
0 2 4 6 8 10 V GE (V) 12 0 1 2 3 V F (V) 4

At At
tp = 250 μs tp = 250 μs
V CE = 10 V

copyright Vincotech 13 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Brake Characteristics

figure 5. IGBT figure 6. IGBT


Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
1,8 1,5
E (mWs)

E (mWs)
Eon
1,5
1,2
Eoff
Eon
1,2 Tj = Tjmax -25°C
Eon
0,9
Eoff
Eoff Eon
0,9

Tj = Tjmax -25°C 0,6


Eoff
0,6

Tj = 25°C 0,3
0,3
Tj = 25°C

0,0 0,0
0 30 60 90 120 150
0 3 6 9 12
I C (A)
15 Ω)
R G (Ω

With an inductive load at With an inductive load at


Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 8 A
R goff = 64 Ω

figure 7. FWD figure 8. FWD


Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
1,0 1,0
E (mWs)
E (mWs)

Erec

0,8 0,8
Tj = Tjmax - 25°C
Tj = Tjmax -25°C

Erec
0,6 0,6

Erec
Tj = 25°C
0,4 0,4

Erec
Tj = 25°C

0,2 0,2

0,0 0,0
0 3 6 9 12 15 0 30 60 90 120 150
I C (A) Ω)
RG (Ω

With an inductive load at With an inductive load at


Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 8 A

copyright Vincotech 14 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Brake Characteristics

figure 9. IGBT figure 10. IGBT


Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1,00 1,00

µ s)
µ s)

tdoff

t (µ
t (µ

tdoff
tdon
tdon tf
0,10 0,10

tf

tr
tr
0,01 0,01

0,00 0,00
0 3 6 9 12 15 0 30 60 90 120 150
I C (A) Ω)
R G (Ω

With an inductive load at With an inductive load at


Tj = 25/125 °C Tj = 25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 8 A
R goff = 64 Ω

figure 11. IGBT figure 12. FWD


IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Z th(j-s) (K/W)

Z th(j-s) (K/W)

100 100

D = 0,5
D = 0,5
10-1 0,2 10-1
0,2
0,1
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0,000
0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 102 100 t p (s) 101 10-5 10-4 10-3 10-2 10-1 102 100 t p (s) 101

At At
D = tp/T D = tp/T
R th(j-s) = 1,51 K/W R th(j-s) = 2,20 K/W

copyright Vincotech 15 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Brake Characteristics

figure 13. IGBT figure 14. IGBT


Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
100 25
P tot (W)

I C (A)
80 20

60 15

40 10

20 5

0 0
0 50 100 150 200
T s (oC) 0 50 100 150 T s (oC) 200

At At
Tj = 150 ºC Tj = 150 ºC
V GE = 15 V

figure 15. FWD figure 16. FWD


Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
80 25
P tot (W)

I F (A)

20
60

15

40

10

20
5

0 0
0 50 100 150 T s (oC) 200 0 50 100 150 T s (oC) 200

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 16 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Rectifier Diode Characteristics

figure 1. Rectifier Diode figure 2. Rectifier Diode


Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
I F= f(V F) Z th(j-s) = f(t p)
80 101
I F (A)

Z th(j-s) (K/W)
70

60

100
50

40

30 D = 0,5
10-1 0,2
20 0,1
0,05
Tj = Tjmax-25°C 0,02
10
0,01
Tj = 25°C 0,005
0 0,000
0,0 0,5 1,0 1,5 2,0 10-2
V F (V) t p (s)
10-5 10-4 10-3 10-2 10-1 100 10110

At At
tp = 250 μs D = tp/T
R th(j-s) = 1,25 K/W

figure 3. Rectifier Diode figure 4. Rectifier Diode


Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
120 70
P tot (W)

I F (A)

60
100

50
80

40

60

30

40
20

20
10

0 0
0 50 100 150 200 0 50 100 150 200
T s (oC) T s (oC)

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 17 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Thermistor

figure 1. Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T )
NTC-typical temperature characteristic
24000
Ω)
R (Ω

20000

16000

12000

8000

4000

0
25 50 75 100 125
T (°C)

copyright Vincotech 18 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Switching Definitions Inverter
General conditions
Tj = 125 °C
R gon = 64 Ω
R goff = 64 Ω

figure 1. IGBT figure 2. IGBT


Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off) (t E on = integrating time for E on)
125 250
% tdoff %
IC
100 200
VGE 90% VCE 90%

75 150
IC
VGE
VCE
50 100
tEoff
VGE
tdon
25 50

VCE VCE 3%
VGE 10% IC 10%
0 0 tEon
IC 1%

-25 -50
-0,2 0 0,2 0,4 0,6 0,8 2,6 2,8 3 3,2 3,4 3,6
time (µs) time (µs)

V GE (0%) = -15 V V GE (0%) = -15 V


V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 600 V V C (100%) = 600 V
I C (100%) = 15 A I C (100%) = 15 A
t doff = 0,39 μs t don = 0,22 μs
t E off = 0,70 μs t E on = 0,56 μs

figure 3. IGBT figure 4. IGBT


Turn-off Switching Waveforms & definition of t f Turn-on Switching Waveforms & definition of t r
140 250
% %
120
fitted 200
IC
100
IC 90%
150
80
VCE
60 100
IC 60%
IC 90%
tr
40 IC 40%
50

20
Ic IC 10%
VCE IC 10% 0
0 tf

-20 -50
0 0,2 0,4 0,6 0,8 2,8 2,9 3 3,1 3,2 3,3
time (µs)
time (µs)

V C (100%) = 600 V V C (100%) = 600 V


I C (100%) = 15 A I C (100%) = 15 A
tf = 0,18 μs tr = 0,03 μs

copyright Vincotech 19 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Switching Definitions Inverter

figure 5. IGBT figure 6. IGBT


Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon
125 200
Pon
% %
IC 1%
Eoff
100
Poff 150

75
Eon
100

50

50

25

VGE 90% VGE 10% VCE 3%


0 tEon
0
tEoff

-25 -50
-0,2 0 0,2 0,4 0,6 0,8 2,7 2,9 3,1 3,3 3,5
time (µs) time (µs)

P off (100%) = 8,99 kW P on (100%) = 8,99 kW


E off (100%) = 1,71 mJ E on (100%) = 1,81 mJ
t E off = 0,70 μs t E on = 0,56 μs

figure 7. FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100

trr
50

Vd fitted
0
IRRM 10%

-50

-100
IRRM 90%
IRRM 100%

-150
2,8 3 3,2 3,4 3,6 3,8
time (µs)

V d (100%) = 600 V
I d (100%) = 15 A
I RRM (100%) = 17 A
t rr = 0,48 μs

copyright Vincotech 20 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet
Switching Definitions Inverter

figure 8. FWD figure 9. FWD


Turn-on Switching Waveforms & definition of t Qrr Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr) (t Erec= integrating time for E rec)
150 125
% %
Id Erec
100 100

tQrr tErec
50 75

Qrr
0 50

-50 25

Prec

-100 0

-150 -25
2,8 3,1 3,4 3,7 4,0 4,3 2,8 3,1 3,4 3,7 4 4,3
time (µs)
time (µs)

I d (100%) = 15 A P rec (100%) = 8,99 kW


Q rr (100%) = 3,11 μC E rec (100%) = 1,18 mJ
t Q rr = 0,98 μs t E rec = 0,98 μs

copyright Vincotech 21 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
Ordering Code and Marking - Outline - Pinout datasheet
Ordering Code & Marking
Version Ordering Code
Without phase-change material 17mm housing with solder pins V23990-P540-A01-PM
With phase-change material 17mm housing with solder pins V23990-P540-A01-/3/-PM
Without phase-change material 17mm housing with solder pins without BRC V23990-P540-C01-PM
VIN Date code Name&Ver UL Lot Serial
Text
VIN WWYY NNNNNNVV UL LLLLL SSSS

Type&Ver Lot number Serial Date code


Datamatrix
TTTTTTTVV LLLLL SSSS WWYY

Outline
Pin table Pinout variation
Pin X Y Function Modul subtype Not assembled pins
1 25,5 2,7 NTC1 P540-A01 -
2 25,5 0 NTC2 P540-C01 4,5,20

3 22,8 0 -DC

4 20,1 0 BRCG

5 16,2 0 BRCE

6 13,5 0 G6

7 10,8 0 E6

8 8,1 0 G5

9 5,4 0 E5

10 2,7 0 G4

11 0 0 E4

12 0 19,8 G1

13 0 22,5 U

14 7,5 19,8 G2

15 7,5 22,5 V

16 15 19,8 G3

17 15 22,5 W

18 22,8 22,5 +INV

19 25,5 22,5 +DC

20 33,5 22,5 BRC+

21 33,5 15 L1

22 33,5 7,5 L2
23 33,5 0 L3

Pinout

Identification
ID Component Voltage Current Function Comment

T1-T6 IGBT 1200 V 15 A Inverter Switch


D1-D6 FWD 1200 V 15 A Inverter Diode
T7 IGBT 1200 V 8A Brake Switch
D13 FWD 1200 V 9A Brake Diode
D7-D12 Rectifier 1600 V 35 A Rectifier Diode
NTC Thernistor Thermistor

copyright Vincotech 22 23 Jun. 2016 / Revision 4


V23990-P540-A01-PM
V23990-P540-C01-PM
datasheet

Packaging instruction
Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample

Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.

Package data
Package data for flow 0 packages see vincotech.com website.

UL recognition and file number


This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.: Date: Modification: Pages


V23990-P540-x01-D4-14 23 Jun. 2016 New brand All

DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.

LIFE SUPPORT POLICY


Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 23 23 Jun. 2016 / Revision 4

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