EE1029 Lecture4 Diodes-and-BJT PDF
EE1029 Lecture4 Diodes-and-BJT PDF
EE1029 Lecture4 Diodes-and-BJT PDF
Lecture 4
Handout 09
Diodes
one-way valve
https://www.youtube.com/watch?v=aJ23Owvgdyc 3
What is diode?
Diode is a semiconductor device.
Diode is a two-terminal electronic component that conducts
current primarily in one direction; it has low resistance in one
direction, and high resistance in the other.
Diode bridge
rectifier
5
What is diode?
A diode has two distinct electrodes (i.e. terminals), called the
Anode (A) and the Cathode (K).
𝑖𝐷 = 𝐼𝑆 𝑒 𝑞𝑣𝐷 𝑛𝓀𝑇
−1
𝑻 𝑲 = 𝒕 oC + 𝟐𝟕𝟑
( A)
𝟏 ≤ 𝒏 ≤ 𝟐: depending on the material and the
physical structure of the diode
𝒌𝑻
Let 𝑽𝑻 = , we have:
𝒒
𝑖𝐷 = 𝐼𝑆 𝑒 𝑣𝐷 𝑛𝑉𝑇
− 1 ≈ 𝐼𝑆 𝑒 𝑣𝐷 𝑛𝑉𝑇
𝑖𝐷 = 𝐼𝑆 𝑒 𝑣𝐷 𝑛𝑉𝑇
−1 𝒊 is very small
(𝒊 ≈ 𝟎) ignore it
There is positive current
flowing through diode
𝑣𝐷 from anode to cathode.
−𝑰𝑺
VON
𝑖<0 𝑖 ≅ −𝐼𝑆 ≈ 0
𝒗 < −𝑽𝐙𝐊
9
Biasing a diode
https://instrumentationtools.com/forward-bias-reverse-bias-operation-of-a-diode/ 10
4.5mA
0.5V
+ -
iD
𝟓 − 𝒗𝑫
𝒊𝑫 =
𝟏𝒌
Operating point
4.5mA
0.5V
Ref. M. -C. Brunet 11
Graphical solution???
use “models”
⟹ approximate solution.
IV characteristic is approximated
by “easier” IV-lines.
VON
0
0
-IS
Ref. M. -C. Brunet 13
: 𝒗 = 𝑽𝑶𝑵
𝒗 = VON
𝒗 = 𝑽𝑶𝑵 𝑽𝑶𝑵
+ −
𝒊
𝒊>𝟎
Ref. M. -C. Brunet 14
Using the large signal diode model, find
= 𝟐. 𝟏𝟓𝐦𝐀 > 𝟎
𝑰
⟹ 𝐝𝐢𝐨𝐝𝐞 𝐢𝐬 𝐎𝐍
Ref. M. -C. Brunet 15
𝒊𝟐 = 𝟎
𝒊𝟐
− +
−𝒗 + 𝒊𝟏
+ 𝟐 + 0.7V
𝒊𝟏 = 𝟎 𝒗𝟏 0.7V +
− 𝒗𝟏
- -
0A 2V
0A -2V
𝒊𝟐 𝒊𝟐
− +
− 𝒗𝟐 +
+ 0.7V 𝒊+𝟏
𝒊𝟏 𝒗𝟏 0.7V +
− 𝒗𝟏
- -
ID
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V
Assume that diode is ON
Replace diode by the voltage source VON
Find ID and check that ID > 0?
ID ID
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V
Find ID
ID
ID
Thévenin
where
RTH = R1//R3 = 250//750 = 187.5 𝐼𝐷 =
4.5 − 0.7
= 8.69mA
750 187.5 + 250
𝑉𝑇𝐻 = ∙ 6 = 4.5𝑉
250 + 750
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V
-IS (or IRB)
+ 𝒊𝑫 = 𝟎𝐀
𝑣𝐷 𝒗𝑫 = −𝟒𝐕
-
+ 𝒊𝑫 = 𝑰𝐑𝐁 = −𝟏𝟎𝛍𝐀
−𝟏𝟎𝛍𝐀 𝑣𝐷 𝒗𝑫 = 𝟏𝟎𝛍𝐀. 𝟐𝐤 − 𝟒 = −𝟑. 𝟗𝟖𝐕
Ref. M. -C. Brunet - 24
A.
E. I
---
OFF A.44 2 ·
Iz
-
-
=
T30
-
Vp>0
D
R.B. I F.B.
=
region
zener diode
region works
->
zener diode Breakdown same as PN diode
region
- Reverse
Biosed
Vz:
A. EA-K
F
-
A.K Up
· -
=
VZ
- V
Z
Check that:In 10
Zener diode
->
ID
Replace by open-circuit
A-DEoK-> H
+Vo-
𝑰≥𝟎
𝒊
𝒊𝑫 ≤ 𝟎
-7 -5
𝒗
𝟎 0.7 𝒊𝑫 ≥ 𝟎; 𝒊𝑫 = 𝟎;
𝒗𝑫 = 𝑽𝑶𝑵 −𝑽𝒛 < 𝒗𝑫 < 𝑽𝐎𝐍
0.7V -
- 𝒗𝑫
+
+
cannot since 𝒗𝑫 = −𝟕𝐕 not
𝒊𝑫 ≤ 𝟎 on the graph
𝒗𝑫 = −𝑽𝒛 ;
𝒊𝑫 < 𝟎
− −𝟓 − 𝟕
𝒊𝑫 = - -5V
𝟒𝒌 +
= −𝟎. 𝟓𝐦𝐀 𝒊𝑫
->
Replace Zener diode
by voltage
am
e
O
L
·
In breakdown region:
E Up Vz -
IpCO?
·
Kel ( K
F1 Ip I )
+
=
=
Ip I I(1)
=
-
Ohm's
** (2)
·
law:In -
+
=
I1
22(3)
=>
=
·
zener diode works in breakdown region
Dz
=>
-
Zener diode
*
voltage Regular
(*)
=>
orEl,
->
*
Assume the zener diode operates in breakdown region:
−𝒗𝑫 = 𝑽𝒛 𝑽𝒔 − 𝑽𝒛 𝑹𝟏
𝒊𝑳 > 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 𝑽𝒔 − 𝑽𝒛 𝒊𝑳 − 𝒊𝒔
𝒊𝑳 < 𝑽𝒔 − 𝑽𝒛 𝑹𝟏
Ref. M. -C. Brunet 28
𝑰 A
−
𝒗𝑫
+ 𝒊𝑫
B
???
???
Zener diode is in breakdown region ⟹ 𝒊𝑫 < 𝟎.
𝒗𝑫 = −𝑽𝒛 = −𝟕𝐕
𝒗𝑳 = −𝒗𝑫 = +𝑽𝒛 = 𝟕𝐕
KCL @ A: 𝑰 + 𝒊𝑫 = 𝒊𝑳 (*)
𝟏𝟎+𝒗𝑫 𝟏𝟎−𝟕
where 𝑰 = = = 𝟏. 𝟓𝐦𝐀
𝟐𝒌 𝟐𝒌
(*) ⟹ 𝟏. 𝟓 + 𝒊𝑫 = 𝒊𝑳 ⟹ 𝒊𝑫 < 𝟎 ⟺ 𝒊𝑳 < 𝟏. 𝟓𝐦𝐀
Ref. M. -C. Brunet 29
k
𝒊𝒔 ≥ 𝟎
O
𝑹𝟏
𝒊𝑳 ≥ 𝟎
𝒊𝑫 ≤ 𝟎 ⑪
#
breakdown OFF
@ breakdown region
𝒊𝑫 = 𝒊𝑳 − 𝒊𝒔
Vi
m Vp Vz
=
-
=
·
If I, 75mA => zener diode is OFF
@K:+y I
=
==I -
5
zener diode
*
is OFF
->
Ic75mA
-> Replace Toner diode by open-circuit
·
Ip =
0 (zener diode is OFF)
I=
=>
IL
loop &: -
Vs +
I,. R, -
Vp 0
=
Up Vs Is. R1 Vs Ec.R,
=>
=
-
+
=
-
+
·Imax
1 7,5
=
=
=
CRL 0&)=
Solar
cell
𝑽𝐎𝐍
−𝑰𝒔 𝒗>𝟎
⟺ source
Ref. M. -C. Brunet −𝑰𝒔 − 𝑰𝒐 𝒊<𝟎 31
Breakdown region
mach chick tim
ban ki
https://www.youtube.com/watch?v=X13h7FyqMZE 32
Example 8: Diode Clipping Circuits
1k Vin = 10sin(𝜔t)
2V
(A)
𝑽𝐢𝐧 + 𝟐
0 (s) 𝒊𝑫 =
𝑹
When diode is OFF
𝒊𝑫 = 𝟎
Ref. M. -C. Brunet 34
Ref. M. -C. Brunet 35
Ref. M. -C. Brunet 36
Ref. M. -C. Brunet 37
Ref. M. -C. Brunet 38
Ref. M. -C. Brunet 39
Ref. M. -C. Brunet Lê Chí Thông 40
Ref. M. -C. Brunet Lê Chí Thông 41
Ref. M. -C. Brunet Lê Chí Thông 42
Introduction to
Electrical and Computer Engineering
Lecture 4
Handout 10
Bipolar Junction Transistor (BJT)
45
https://www.youtube.com/watch?v=5M6wclkmJ28
46
B: Base
C: Collector
E: Emitter
𝒊𝑩 𝑽𝑪𝑩
𝒊𝑪 𝑽𝑪𝑬
𝒊𝑬 𝑽𝑩𝑬
-
𝒊𝑩 > 𝟎 𝑽𝑩𝑬 > 𝟎
𝒊𝑪 > 𝟎 𝑽𝑪𝑬 > 𝟎
(BJT is ON) (BJT is ON)
Input IV Output IV
𝒊𝑩 𝒊𝑪
~ const
𝑽𝑩𝑬 𝑽𝑪𝑬
Ic f(VcE)
=
Ib f(VE)
=
VBEON 0, 1V
=
B
E current 50-300
·
gain
VCE SAT
F0,2V
BJT
*
is OFF:Ip 0 ; =
Ic 0
=
; IE 0
=
BTT
*
E isat
I
BIT is
* ON in saturation region
=>
E
Ic B. FB
VCE VCE SAT-0, 2V
=
I, 0
Ic B. IB
·
·VBE VBEON =
0,7V
=
·UCE> YE
S AT
IB <0
·Ic <B. IB
·UBE=YBEON 0,7V
=
·VCE VCESAT =
E 0,2V
Characteristics of Common-Emitter
(npn transistor)
VCC ·
Oc Vin VBEON:OFF
·
Vin Vinlim:saturated
active
·
VBIDN VinVinlim:
VCESAT VBEON Vinlim
V
in lim=Y*SAT. RUBEON
Ref. M. -C. Brunet 58
Power
dissipated
in BJT
RE
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