EE1029 Lecture4 Diodes-and-BJT PDF

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Introduction to

Electrical and Computer Engineering

Lecture 4
Handout 09
Diodes

Ref. M. -C. Brunet 2


What is diode?
 Diode is a semiconductor device.
 Diode is a two-terminal electronic component that conducts
current primarily in one direction; it has low resistance in one
direction, and high resistance in the other.
one-way valve

one-way valve

https://www.youtube.com/watch?v=aJ23Owvgdyc 3
What is diode?
 Diode is a semiconductor device.
 Diode is a two-terminal electronic component that conducts
current primarily in one direction; it has low resistance in one
direction, and high resistance in the other.

Ref. M. -C. Brunet 4


AC to DC converter

Diode bridge
rectifier

5
What is diode?
 A diode has two distinct electrodes (i.e. terminals), called the
Anode (A) and the Cathode (K).

Ref. M. -C. Brunet 6


What is diode?
𝒗𝑫
+ −
𝒊𝑫

Cathode side is typically indicated by


a band painted a different color.

 𝒊𝑫 is current through diode


 𝒗𝑫 is voltage drop diode and called the bias voltage

Ref. M. -C. Brunet 7


The IV characteristic of diode

𝑖𝐷 = 𝐼𝑆 𝑒 𝑞𝑣𝐷 𝑛𝓀𝑇
−1

𝑻 𝑲 = 𝒕 oC + 𝟐𝟕𝟑
( A)
𝟏 ≤ 𝒏 ≤ 𝟐: depending on the material and the
physical structure of the diode

𝒌𝑻
Let 𝑽𝑻 = , we have:
𝒒

𝑖𝐷 = 𝐼𝑆 𝑒 𝑣𝐷 𝑛𝑉𝑇
− 1 ≈ 𝐼𝑆 𝑒 𝑣𝐷 𝑛𝑉𝑇

The voltage VT depends on the temperature, therefore


it is called the thermal voltage .

Ref. M. -C. Brunet 8


The IV characteristic of diode
The IV characteristic
Forward of diode
Bias Region
Forward–biased Forward–biased region:
region: 𝟎 < 𝒗 < VON, 𝒗 ≥ VON and 𝒊 > 𝟎

𝑖𝐷 = 𝐼𝑆 𝑒 𝑣𝐷 𝑛𝑉𝑇
−1 𝒊 is very small
(𝒊 ≈ 𝟎)  ignore it
 There is positive current
flowing through diode
𝑣𝐷 from anode to cathode.

≅ 𝐼𝑆 𝑒 𝑛𝑉𝑇 Forward Forward

(or –VZ) 𝑖≈0 𝑖>0

−𝑰𝑺
VON
𝑖<0 𝑖 ≅ −𝐼𝑆 ≈ 0

For Reverse–biased region:


Zener diode: − 𝑽𝒁𝑲 < 𝒗 < 0, and (or forward voltage drop VON)
𝒊 ≈ −𝑰𝑺 < 0 (very small)
diode

𝒗 < −𝑽𝐙𝐊

9
Biasing a diode

Anode Cathode Anode Cathode

 To bias a diode, we apply a external voltage source across it.


 The resistor RLIMIT limits the forward current to a value that will not damage the diode.
 Forward bias VBIAS is the condition that allows current through the pn junction. The bias
voltage must be greater than VON.
o The negative side of VBIAS is connected to the n region (Cathode side) of the diode
o The positive side is connected to the p region (Anode side) of the diode
 Reverse bias is the condition that essentially prevents current through the diode.
o The negative side of VBIAS is connected to the p region (Anode side) of the diode
o The positive side is connected to the n region (Cathode side) of the diode

https://instrumentationtools.com/forward-bias-reverse-bias-operation-of-a-diode/ 10
4.5mA
0.5V

+ -
iD

𝟓 − 𝒗𝑫
𝒊𝑫 =
𝟏𝒌

 Operating point

4.5mA


0.5V
Ref. M. -C. Brunet 11
Graphical solution???

use “models”
⟹ approximate solution.

IV characteristic is approximated
by “easier” IV-lines.

Ref. M. -C. Brunet 12


0
VON

VON
0
0
-IS
Ref. M. -C. Brunet 13
: 𝒗 = 𝑽𝑶𝑵
𝒗 = VON

𝒊 < 𝟎 and very small : 𝒊 = 𝟎 𝑽𝑶𝑵


𝒊≈𝟎
𝒊=𝟎 𝐨𝐩𝐞𝐧 − 𝐜𝐢𝐫𝐜𝐮𝐢𝐭
𝒊=𝟎
 
+𝒗 −
𝒗 < 𝑽𝑶𝑵

𝒗 = 𝑽𝑶𝑵 𝑽𝑶𝑵
+ −
𝒊
𝒊>𝟎
Ref. M. -C. Brunet 14
Using the large signal diode model, find

Assume that diode is forward-biased


⟹ 𝒗𝑫 = 𝑽𝑶𝑵 = 𝟎. 𝟕𝑽
𝟓 − 𝟎. 𝟕
⟹ 𝒊𝑫 = 𝑰 = −
𝟐𝒌 0.7V +

= 𝟐. 𝟏𝟓𝐦𝐀 > 𝟎
𝑰
⟹ 𝐝𝐢𝐨𝐝𝐞 𝐢𝐬 𝐎𝐍
Ref. M. -C. Brunet 15
𝒊𝟐 = 𝟎
𝒊𝟐
− +
−𝒗 + 𝒊𝟏
+ 𝟐 + 0.7V
𝒊𝟏 = 𝟎 𝒗𝟏 0.7V +
− 𝒗𝟏
- -

0A 2V
0A -2V

𝒊𝟐 𝒊𝟐
− +
− 𝒗𝟐 +
+ 0.7V 𝒊+𝟏
𝒊𝟏 𝒗𝟏 0.7V +
− 𝒗𝟏
- -

Ref. M. -C. Brunet Lê Chí Thông 16


Flowchart for DC Analysis of Diode Circuits
1. Guess whether each diode is OFF or ON.
(You should use your intuition as much as
possible to make good guesses.)
2. Replace each diode with a linear element
and redraw the circuit.
3. In the resulting linear circuit, solve for all
the voltages and currents where the diodes
used to be, using KCL, KVL, Ohm’s law
and/or the node-voltage method.
4. Check whether the appropriate
condition holds for each diode.
 If any diode fails its condition, change
one or more of your guesses and
repeat this procedure from step 2.
 Otherwise, all diodes satisfy their
conditions and your guesses are
correct.
5. Solve for the desired voltages and currents
using the correct guesses for the diode
states.
https://courses.engr.illinois.edu/ece110/fa2021/content/courseNotes/files/?diodes#DIO-DFL 17
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V

ID
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V
 Assume that diode is ON
 Replace diode by the voltage source VON
 Find ID and check that ID > 0?

ID ID
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V
 Find ID
ID
ID

Thévenin

where
RTH = R1//R3 = 250//750 = 187.5 𝐼𝐷 =
4.5 − 0.7
= 8.69mA
750 187.5 + 250
𝑉𝑇𝐻 = ∙ 6 = 4.5𝑉
250 + 750
Example 4. Using the large signal diode model, find
the value of ID. Given VON = 0.7V
-IS (or IRB)

Ref. M. -C. Brunet Lê Chí Thông 22


Approximate solution:
𝒗𝑫 = 𝟎𝐕
𝒊𝑫 = 𝟐𝐦𝐀

Approximate solution: 𝒗𝑫 = 𝟎. 𝟕𝐕, 𝐚𝐧𝐝 𝒊𝑫 = 𝟏. 𝟔𝟓𝐦𝐀


Ref. M. -C. Brunet 23
𝑰≥𝟎 𝒊𝑫 ≤ 𝟎 (R.B.)

+ 𝒊𝑫 = 𝟎𝐀
𝑣𝐷 𝒗𝑫 = −𝟒𝐕
-

+ 𝒊𝑫 = 𝑰𝐑𝐁 = −𝟏𝟎𝛍𝐀
−𝟏𝟎𝛍𝐀 𝑣𝐷 𝒗𝑫 = 𝟏𝟎𝛍𝐀. 𝟐𝐤 − 𝟒 = −𝟑. 𝟗𝟖𝐕
Ref. M. -C. Brunet - 24
A.
E. I

---
OFF A.44 2 ·
Iz
-
-
=
T30
-

Vp>0
D

R.B. I F.B.
=

region
zener diode
region works
->
zener diode Breakdown same as PN diode
region
- Reverse
Biosed

Ref. M. -C. Brunet 25


① Breakdown region:
-> Replace Zener diode
by Voltage
source
-

Vz:
A. EA-K
F
-

A.K Up
· -
=

VZ
- V
Z

Check that:In 10

② zener diode is OFF

Zener diode
->
ID
Replace by open-circuit
A-DEoK-> H
+Vo-
𝑰≥𝟎
𝒊

𝒊𝑫 ≤ 𝟎

-7 -5
 𝒗
𝟎 0.7 𝒊𝑫 ≥ 𝟎; 𝒊𝑫 = 𝟎;
𝒗𝑫 = 𝑽𝑶𝑵 −𝑽𝒛 < 𝒗𝑫 < 𝑽𝐎𝐍
0.7V -
- 𝒗𝑫
+
+
cannot since 𝒗𝑫 = −𝟕𝐕 not
𝒊𝑫 ≤ 𝟎 on the graph
𝒗𝑫 = −𝑽𝒛 ;
𝒊𝑫 < 𝟎
− −𝟓 − 𝟕
𝒊𝑫 = - -5V
𝟒𝒌 +
= −𝟎. 𝟓𝐦𝐀 𝒊𝑫

Ref. M. -C. Brunet 26


Ref. M. -C. Brunet 27
rotene
isAssuming that
the

Assuming that Zener dioc works in breakdown region

->
Replace Zener diode
by voltage
am

e
O

L
·
In breakdown region:

E Up Vz -

IpCO?

·
Kel ( K

F1 Ip I )
+
=
=

Ip I I(1)
=
-
Ohm's
** (2)
·
law:In -

KUL loop : Vs 1.R-(-Vz) 0


· -

+
=

I1
22(3)
=>
=

(1), (2), (3) Ip


E-
=>
=

·
zener diode works in breakdown region

Dz
=>

-
Zener diode
*
voltage Regular
(*)
=>

orEl,

->
*
Assume the zener diode operates in breakdown region:

−𝒗𝑫 = 𝑽𝒛 𝑽𝒔 − 𝑽𝒛 𝑹𝟏
𝒊𝑳 > 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 𝑽𝒔 − 𝑽𝒛 𝒊𝑳 − 𝒊𝒔

𝒊𝑳 < 𝑽𝒔 − 𝑽𝒛 𝑹𝟏
Ref. M. -C. Brunet 28
𝑰 A


𝒗𝑫
+ 𝒊𝑫
B

???
???
Zener diode is in breakdown region ⟹ 𝒊𝑫 < 𝟎.
𝒗𝑫 = −𝑽𝒛 = −𝟕𝐕
𝒗𝑳 = −𝒗𝑫 = +𝑽𝒛 = 𝟕𝐕
KCL @ A: 𝑰 + 𝒊𝑫 = 𝒊𝑳 (*)
𝟏𝟎+𝒗𝑫 𝟏𝟎−𝟕
where 𝑰 = = = 𝟏. 𝟓𝐦𝐀
𝟐𝒌 𝟐𝒌
(*) ⟹ 𝟏. 𝟓 + 𝒊𝑫 = 𝒊𝑳 ⟹ 𝒊𝑫 < 𝟎 ⟺ 𝒊𝑳 < 𝟏. 𝟓𝐦𝐀
Ref. M. -C. Brunet 29
k

𝒊𝒔 ≥ 𝟎
O

𝑹𝟏
𝒊𝑳 ≥ 𝟎
𝒊𝑫 ≤ 𝟎 ⑪
#

breakdown OFF
@ breakdown region
𝒊𝑫 = 𝒊𝑳 − 𝒊𝒔

𝒊𝒔 = 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 -5mA -3mA 0mA 0mA


@ OFF region -5V -5V -3V -1V
𝒊𝑫 = 𝟎
𝒊𝒔 = 𝒊𝑳 5V 5V 3V 1V
Breakdown region:
𝒊𝑳 < 𝑽𝒔 − 𝑽𝒛 𝑹𝟏 = 𝟏𝟓 − 𝟓 𝟐𝒌 = 𝟓𝐦𝐀
For 𝒊𝑳 > 𝟓𝐦𝐀, diode is OFF.
Ref. M. -C. Brunet 30
zener works townas a
the
diode in region regulator
·

Vi
m Vp Vz
=
-
=

·
If I, 75mA => zener diode is OFF

@K:+y I
=

==I -
5

zener diode
*
is OFF
->
Ic75mA
-> Replace Toner diode by open-circuit
·

Ip =
0 (zener diode is OFF)
I=
=>
IL

loop &: -

Vs +

I,. R, -

Vp 0
=

Up Vs Is. R1 Vs Ec.R,
=>

=
-
+
=
-
+

·Imax
1 7,5
=
=
=

CRL 0&)=
Solar
cell
𝑽𝐎𝐍
−𝑰𝒔 𝒗>𝟎
⟺ source
Ref. M. -C. Brunet −𝑰𝒔 − 𝑰𝒐 𝒊<𝟎 31
Breakdown region
mach chick tim
ban ki

The Diode Clipper

https://www.youtube.com/watch?v=X13h7FyqMZE 32
Example 8: Diode Clipping Circuits

1k Vin = 10sin(𝜔t)

2V

When diode is ON: 𝒗𝑫 = 𝟎 𝑽𝐢𝐧 + 𝟐


𝒊𝑫 =
A 0A 𝑹
 𝑽𝐨𝐮𝐭 = 𝑽𝐀𝐁 = −𝟐
1k +
𝒊𝑫
𝒗𝑫

2V 𝒊𝑫 > 𝟎?

B 𝒊𝑫 > 𝟎 when 𝑽𝐢𝐧 > −𝟐
When diode is OFF: 𝒊𝑫 = 𝟎
0A 0A
𝒗𝑫 = 𝑽𝐢𝐧 + 𝟐
1k + 𝒊𝑫 = 𝟎
𝒗𝑫 𝑽𝐨𝐮𝐭 = 𝑽𝐢𝐧

2V 𝒗𝑫 < 𝟎?
𝒗𝑫 < 𝟎 when 𝑽𝐢𝐧 < −𝟐
Ref. M. -C. Brunet 33
(V) 𝑽𝐢𝐧 > −𝟐:
10 diode is ON
𝑽 = 𝑽𝐀𝐁 = −𝟐
0 (s) 𝐨𝐮𝐭
-2
𝑽𝐢𝐧 < −𝟐:
- 10 diode is OFF
𝑽𝐨𝐮𝐭 = 𝑽𝐢𝐧
(V) Vin
10
0 (s)
-2
-10

(A)

𝑽𝐢𝐧 + 𝟐
0 (s) 𝒊𝑫 =
𝑹
When diode is OFF
𝒊𝑫 = 𝟎
Ref. M. -C. Brunet 34
Ref. M. -C. Brunet 35
Ref. M. -C. Brunet 36
Ref. M. -C. Brunet 37
Ref. M. -C. Brunet 38
Ref. M. -C. Brunet 39
Ref. M. -C. Brunet Lê Chí Thông 40
Ref. M. -C. Brunet Lê Chí Thông 41
Ref. M. -C. Brunet Lê Chí Thông 42
Introduction to
Electrical and Computer Engineering

Lecture 4
Handout 10
Bipolar Junction Transistor (BJT)

Ref. M. -C. Brunet 44


 A Bipolar Junction Transistor (BJT) is a 3 terminals
semiconductor device that is used for amplification and
switching purpose. It is a current controlled device.
 BJTs are mainly classified as NPN and PNP transistors.

45
https://www.youtube.com/watch?v=5M6wclkmJ28
46
B: Base
C: Collector
E: Emitter

𝒊𝑩 𝑽𝑪𝑩
𝒊𝑪 𝑽𝑪𝑬
𝒊𝑬 𝑽𝑩𝑬

-
𝒊𝑩 > 𝟎 𝑽𝑩𝑬 > 𝟎
𝒊𝑪 > 𝟎 𝑽𝑪𝑬 > 𝟎
(BJT is ON) (BJT is ON)

Ref. M. -C. Brunet 47


99%
1% B: Base
C: Collector
E: Emitter

Ref. M. -C. Brunet 48


BJT is a current controlled device!

Ref. M. -C. Brunet 49


𝒊𝑪
𝒊𝑩 +
+ 𝑽𝑪𝑬
𝑽𝑩𝑬
− −

Input IV Output IV
𝒊𝑩 𝒊𝑪

~ const
𝑽𝑩𝑬 𝑽𝑪𝑬
Ic f(VcE)
=

Ib f(VE)
=

Ref. M. -C. Brunet 50


*
B5T parameters:

VBEON 0, 1V
=

B
E current 50-300
·

gain

VCE SAT
F0,2V

BJT
*

is OFF:Ip 0 ; =
Ic 0
=

; IE 0
=

BTT
*

is ONin active region:


=>

E isat
I
BIT is
* ON in saturation region

=>

E
Ic B. FB
VCE VCE SAT-0, 2V
=

⑦ Cutoff region (BIT is OFF)


·
I=0 -
Ic 0,I= I Ic
=
=
+
0
=

·VDE YBEON I 0,7V

② BIT is ON in active region


·

I, 0

Ic B. IB
·

·VBE VBEON =

0,7V
=

·UCE> YE
S AT

③ BTT is ON in saturation region


·

IB <0

·Ic <B. IB

·UBE=YBEON 0,7V
=

·VCE VCESAT =
E 0,2V
Characteristics of Common-Emitter
(npn transistor)

Ref. M. -C. Brunet 51


Ref. M. -C. Brunet 52
VCE
𝒊𝑪 < 𝜷𝒊𝒃

Ref. M. -C. Brunet 53


𝑹𝑪
𝑹𝑩
𝑽𝑪𝑪

state (off, active or saturated?)


⟹ BJT has to be OFF.
Assume BJT is ON. ⟹ 𝒊𝑩 = 𝟎 ⟹ 𝒊𝑪 = 𝟎
⟹ 𝑽𝐁𝐄 = 𝑽𝐁𝐄𝐎𝐍 = 𝟎. 𝟕𝑽 KVL (output):
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝒊𝑪 𝑹𝑪 = 𝟓𝑽
KVL (input): 0A
𝑽𝐢𝐧 = 𝒊𝑩 𝑹𝑩 + 𝑽𝑩𝑬 0A
𝟎.𝟏−𝟎.𝟕 𝑽𝑪𝑬 = 𝟓𝑽
⟹ 𝒊𝑩 = <𝟎 OFF
𝟒𝟎𝒌
Ref. M. -C. Brunet
Note: if 𝑽𝐢𝐧 < 𝑽𝐁𝐄𝐎𝐍 , BJT is OFF 54
𝑹𝑪
𝑹𝑩
𝑽𝑪𝑪

state (off, active or saturated?)


2 0.8V Assume BJT is active.
Assume BJT is ON. ⟹ 𝒊𝑪 = 𝜷𝒊𝒃 = 𝟎. 𝟐𝟓𝐦𝐀
⟹ 𝑽𝐁𝐄 = 𝑽𝐁𝐄𝐎𝐍 = 𝟎. 𝟕𝑽 KVL (output):
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝒊𝑪 𝑹𝑪 = 𝟒. 𝟕𝟓𝑽
KVL (input): 2.5𝝁A
𝑽𝐢𝐧 = 𝒊𝑩 𝑹𝑩 + 𝑽𝑩𝑬 0.25mA
𝟎.𝟖−𝟎.𝟕 𝑽𝐂𝐄 = 𝟒. 𝟕𝟓𝑽
⟹ 𝒊𝑩 = = 𝟐. 𝟓𝛍𝐀 ACTIVE
𝟒𝟎𝒌
Ref. M. -C. Brunet 55
𝑹𝑪
𝑹𝑩
𝑽𝑪𝑪

state (off, active or saturated?)


3 3.0V Assume BJT is active.
Assume BJT is ON. ⟹ 𝒊𝑪 = 𝜷𝒊𝒃 = 𝟓. 𝟕𝟓𝐦𝐀
⟹ 𝑽𝐁𝐄 = 𝑽𝐁𝐄𝐎𝐍 = 𝟎. 𝟕𝑽 KVL (output):
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝒊𝑪 𝑹𝑪 < 𝑽𝐂𝐄𝐒𝐀𝐓
KVL (input): 57.5𝝁A
𝑽𝐢𝐧 = 𝒊𝑩 𝑹𝑩 + 𝑽𝑩𝑬 4.8mA
𝟑−𝟎.𝟕 𝑽𝐂𝐄𝐒𝐀𝐓 = 𝟎. 𝟐𝑽
⟹ 𝒊𝑩 = = 𝟓𝟕. 𝟓𝛍𝐀 SATURATED
𝟒𝟎𝒌
Ref. M. -C. Brunet
Note: if BJT is SATURATED, 𝒊𝑪 < 𝜷𝒊𝒃 56
0 0 5 OFF
0 0 5 OFF
2.5 0.25 4.75 ACTIVE
32.5 3.25 1.75 ACTIVE
57.5 4.8 0.2 SATURATED

82.5 4.8 0.2 SATURATED

When BJT is saturated:


• 𝒊𝑪 is called as 𝒊𝐂𝐦𝐚𝐱 or 𝒊𝐂𝐬𝐚𝐭 . It is the maximum value of 𝒊𝑪 .
• 𝒊𝐂𝐦𝐚𝐱 < 𝜷𝒊𝒃
• 𝑽𝐂𝐄 = 𝑽𝐂𝐄𝐒𝐀𝐓 (typical ~𝟎. 𝟐𝑽)
57
0 0 HIGH OFF
LARGE 𝒊𝐂𝐦𝐚𝐱 LOW SATURATED

MEDIUM 𝜷𝒊𝒃 MEDIUM ACTIVE

VCC ·
Oc Vin VBEON:OFF
·

Vin Vinlim:saturated
active
·

VBIDN VinVinlim:
VCESAT VBEON Vinlim

V
in lim=Y*SAT. RUBEON
Ref. M. -C. Brunet 58
Power
dissipated
in BJT

𝑷𝐒𝐑𝐒 = −𝑽𝐁𝐄 𝒊𝑩 𝑷𝐒𝐑𝐒 = −𝑽𝐂𝐄 𝒊𝑪 59


If
*
P2 is:
B ·
C

RE

Replace VBEFUB VBE+ VE


=

Ps:VCE = Vc= VcE +


VE

REF02:PK Ip. Up Ic. Va =


+

PBTT Pc- PRE


=> =

where IE. RE FE. VE


PRE= =
𝑷𝑻 = 𝟎
𝑷𝑻 = 𝑽𝑩𝑬 + 𝜷𝑽𝑪𝑬 𝒊𝑩
𝑷𝑻 = 𝑽𝑩𝑬 𝒊𝑩 + 𝑽𝑪𝑬𝑺𝑨𝑻 𝒊𝑪𝐦𝐚𝐱

Ref. M. -C. Brunet 60


Ref. M. -C. Brunet 61
Ref. M. -C. Brunet 62
Ref. M. -C. Brunet 63
Given BJT parameters: VBEON = 0.7V, VCESAT = 0.2V, 𝜷 = 𝟑𝟎𝟎
Find VB, VC, VE and state of transistor.

Ref. M. -C. Brunet 64


65
66
Configure beta and VBEON for BJT in MultiSim
Place Transistor  TRANSISTORS_VIRTUAL BJT_NPN  Double click on BJT  Edit model

Ex. VBEON = 0.7V, and 𝛽 = 300 67


Configure beta and VBEON for BJT in MultiSim
Place Transistor  TRANSISTORS_VIRTUAL BJT_NPN  Double click on BJT  Edit model

Ex. VBEON = 0.7V, and 𝛽 = 300 67

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