a Linear Output

Magnetic Field Sensor

AD22151
FEATURES FUNCTIONAL BLOCK DIAGRAM
Adjustable Offset to Unipolar or Bipolar Operation
Low Offset Drift Over Temperature Range REF
VCC/2
Gain Adjustable Over Wide Range
Low Gain Drift Over Temperature Range
TEMP REF
Adjustable First Order Temperature Compensation OUT AMP
Ratiometric to VCC
AD22151
APPLICATIONS
ISOURCE
Automotive
Throttle Position Sensing
Pedal Position Sensing
Suspension Position Sensing SWITCHES DEMOD

Valve Position Sensing

Industrial
Absolute Position Sensing
Proximity Sensing
VCC
GENERAL DESCRIPTION
The AD22151 is a linear magnetic field transducer. The sensor
NC
output is a voltage proportional to a magnetic field applied
perpendicularly to the package top surface. R1 R2

The sensor combines integrated bulk Hall cell technology and

instrumentation circuitry to minimize temperature related drifts 0.1mF
associated with silicon Hall cell characteristics. The architecture
maximizes the advantages of a monolithic implementation while R3

allowing sufficient versatility to meet varied application require-

OUTPUT
ments with a minimum number of components.
Principle features include dynamic offset drift cancellation and a
NC = NO CONNECT AD22151
built-in temperature sensor. Designed for single +5 volt supply GND

operation, the AD22151 achieves low drift offset and gain op-
eration over –40°C to +150°C. Temperature compensation can Figure 1. Typical Bipolar Configuration with Low
accommodate a number of magnetic materials commonly uti- (< –500 ppm) Compensation
lized in economic position sensor assemblies.
VCC
The transducer may be configured for specific signal gains de-
R1
pendent upon application requirements. Output voltage can be
adjusted from fully bipolar (reversible) field operation to fully
unipolar field sensing. R4
NC
The voltage output achieves near rail-to-rail dynamic range, R2
capable of supplying 1 mA into large capacitive loads. The sig- 0.1mF

nal is ratiometric to the positive supply rail in all configurations.

R3

OUTPUT

GND
NC = NO CONNECT AD22151

Figure 2. Typical Unipolar Configuration with High

(≈ –2000 ppm) Compensation

REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
which may result from its use. No license is granted by implication or Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
otherwise under any patent or patent rights of Analog Devices. Fax: 781/326-8703 © Analog Devices, Inc., 1997
AD22151–SPECIFICATIONS (TA = +258C and V+ = +5 V unless otherwise noted)
Parameters Min Typ Max Units
OPERATION
VCC Operating 4.5 5.0 6.0 V
ICC Operating 6.0 10 mA
INPUT
TC3 (Pin 3) Sensitivity/Volt 160 µV/G/V
V CC
Input Range1 ± 0.5 V
2
OUTPUT2
Sensitivity (External Adjustment, Gain = 1) 0.4 mV/G
Linear Output Range 10 90 % of VCC
Output Min 5 % of VCC
Output Max (Clamp) 93 % of VCC
Drive Capability 1.0 mA
V CC
Offset @ 0 Gauss V
2
Offset Adjust Range 5 95 % of VCC
Output Short Circuit Current 5.0 mA
ACCURACIES
Nonlinearity (10% to 90% Range) 0.1 % FS
Gain Error (Over Temperature Range) ±1 %
Offset Error (Over Temperature Range) ± 6.0 G
Uncompensated Gain TC (GTCU) 950 ppm
RATIOMETRICITY ERROR 1 %V/VCC
3 dB ROLL-OFF (5 mV/G) 5.7 kHz
OUTPUT NOISE FIGURE (6 kHz BW) 2.4 mV/rms
PACKAGE 8-Lead SOIC
OPERATING TEMPERATURE RANGE –40 +150 °C
NOTES
1
–40°C to +150°C.
2
RL = 4.7 kΩ.
Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATING* ORDERING GUIDE

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 V
Package Power Dissipation . . . . . . . . . . . . . . . . . . . . . 25 mW Temperature Package Package
Storage Temperature . . . . . . . . . . . . . . . . . . –50°C to +160°C Model Range Description Option
Output Sink Current, IO . . . . . . . . . . . . . . . . . . . . . . . 15 mA AD22151YR –40°C to +150°C 8-Lead SOIC SO-8
Magnetic Flux Density . . . . . . . . . . . . . . . . . . . . . . Unlimited
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . +300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum
rating conditions for extended periods may affect device reliability.

CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. WARNING!
Although the AD22151 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality.

–2– REV. 0
 AD22151
PIN CONFIGURATION PIN FUNCTION DESCRIPTIONS

Pin No. Description Connection

TC1 1 8 VCC 1 Temperature Compensation 1 Output
TC2 2 AD22151 7 REF
TOP VIEW 2 Temperature Compensation 2 Output
TC3 3 (Not to Scale) 6 GAIN
3 Temperature Compensation 3 Input/Output
GND 4 5 OUTPUT
4 Ground
5 Output Output
AREA OF SENSITIVITY*
6 Gain Input
1 8
7 Reference Output
2 7
8 Positive Power Supply
3 6
(Not to Scale)
4 5

* SHADED AREA REPRESENTS

MAGNETIC FIELD AREA OF
SENSITIVITY (20MILS 3 20MILS)
• POSITIVE B FIELD INTO TOP OF
PACKAGE RESULTS IN A POSITIVE
VOLTAGE RESPONSE

CIRCUIT OPERATION “valleys” of the silicon crystal. Mechanical force on the sensor
The AD22151 consists of epi Hall plate structures located at is attributable to package-induced stress. The package material
the center of the die. The Hall plates are orthogonally sampled acts to distort the encapsulated silicon altering the Hall cell gain
by commutation switches via a differential amplifier. The two by ± 2% and GTCU by ± 200 ppm.
amplified Hall signals are synchronously demodulated to pro- Figure 4 shows the typical GTCU characteristic of the AD22151.
vide a resultant offset cancellation (see Figure 3). The demodu- This is the observable alteration of gain with respect to tempera-
lated signal passes through a noninverting amplifier to provide ture with Pin 3 (TC3) held at a constant 2.5 V (uncompensated).
final gain and drive capability. The frequency at which the
output signal is refreshed is 50 kHz. If a permanent magnet source used in conjunction with the
sensor also displays an intrinsic TC (BTC), it will require factor-
0.005 ing into the total temperature compensation of the sensor
assembly.
0.004
Figures 5 and 6 represent typical overall temperature/gain per-
0.003
formance for a sensor and field combination (BTC = –200 ppm).
0.002 Figure 5 is the total drift in volts over a –40°C to +150°C tem-
OFFSET – Volts

perature range with respect to applied field. Figure 6 represents

0.001
typical percentage gain variation from +25°C. Figures 7 and 8
0 show similar data for a BTC = –2000 ppm.
–0.001
14
–0.002
12

–0.003 10

–0.004 8
140 120 100 80 60 40 20 0 –20 –40
TEMPERATURE – 8C 6
% GAIN

Figure 3. Relative Quiescent Offset vs. Temperature 4

2
TEMPERATURE DEPENDENCIES
0
The uncompensated gain temperature coefficient (GTCU) of the
AD22151 is the result of fundamental physical properties asso- –2

ciated with silicon bulk Hall plate structures. Low doped Hall –4
plates operated in current bias mode exhibit a temperature –6
relationship determined by the action of scattering mechanisms –40 10 60 110 160
TEMPERATURE – 8C
and doping concentration.
The relative value of sensitivity to magnetic field can be altered Figure 4. Uncompensated Gain Variation (from +25 °C) vs.
by the application of mechanical force upon silicon. The mecha- Temperature
nism is principally the redistribution of electrons throughout the

REV. 0 –3–
AD22151
0.025
2.0

1.8
0.020
1.6
DELTA SIGNAL – Volts

1.4
0.015
1.2

% GAIN
1.0
0.010
0.8

0.6

0.005 0.4

0.2

0 0
–600 –400 –200 0 200 400 600
–0.2
FIELD – Gauss –40 10 60 110 160
TEMPERATURE – 8C
Figure 5. Signal Drift Over Temperature (–40 °C to +150 °C)
vs. Field (–200 ppm); +5 V Supply Figure 8. Gain Variation (from +25 °C) vs. Temperature
(–2000 ppm Field; R1 = 12 kΩ)

0.25 TEMPERATURE COMPENSATION

The AD22151 incorporates a “thermistor” transducer that
0.20 detects relative chip temperature within the package. This
function provides a compensation mechanism for the various
0.15
temperature dependencies of the Hall cell and magnet combina-
tions. The temperature information is accessible at Pins 1 and 2
(≈ +2900 ppm /°C) and Pin 3 (≈ –2900 ppm/°C) as represented
% GAIN

0.10
by Figure 9. The compensation voltages are trimmed to con-
verge at VCC/2 at +25°C. Pin 3 is internally connected to the
0.05
negative TC voltage via an internal resistor (see Functional
Block Diagram). An external resistor connected between Pin 3
0 and Pins 1 or 2 will produce a potential division of the two comple-
mentary TC voltages to provide optimal compensation. The
–0.05 aforementioned Pin 3 internal resistor provides a secondary TC
–40 10 60 110 160
TEMPERATURE – 8C
designed to reduce second order Hall cell temperature sensitivity.

Figure 6. Gain Variation from +25 °C vs. Temperature 1.0

(–200 ppm) Field; R1 –15 kΩ 0.8

0.6 TC1, TC2 VOLTS

0.045 0.4
VOLTS – Reference

0.040 0.2

0
0.035
–0.2
DELTA SIGNAL – Volts

0.030
–0.4 TC3 VOLTS
0.025
–0.6
0.020
–0.8
0.015
–1.0
150 112 74 36 –2 –40
0.010 TEMPERATURE – 8C

0.005 Figure 9. TC1, TC2 and TC3 with Respect to Reference vs.
0 Temperature
–800 –600 –400 –200 0 200 400 600 800
FIELD – Gauss The voltages present at Pins 1, 2 and 3 are proportional to the
supply voltage. The presence of the Pin 2 internal resistor
Figure 7. Signal Drift Over Temperature (–40 °C to +150 °C)
distinguishes the effective compensation ranges of Pins 1 and 2
vs. Field (–2000 ppm); +5 V Supply
(see temperature configuration in Figures 1 and 2, and typical
resistor values in Figures 10 and 11).
Variation occurs in the operation of the gain temperature
compensation for two reasons. First, the die temperature within

–4– REV. 0
 AD22151
the package is somewhat higher than the ambient temperature 800

due to self-heating as a function of power dissipation. Second,

package stress effect alters the specific operating parameters of 600

the gain compensation, particularly the specific cross over

temperature of TC1, TC3 ( ≈ ± 10°C).
400

DRIFT – ppm
200
CONFIGURATION AND COMPONENT SELECTION
There are three areas of sensor operation that require external 0
component selection. Temperature compensation (R1), signal
gain (R2 and R3), and offset (R4). –200

Temperature
–400
If the internal gain compensation is used, an external resistor is
required to complete the gain TC circuit at Pin 3. A number of –600
factors contribute to the value of this resistor. 0 5 10 15 20 25 30 35 40 45 50
R1 – kV
a. The intrinsic Hall cell sensitivity TC ≈ 950 ppm.
b. Package induced stress variation in a. ≈ ± 150 ppm. Figure 11. Typical Resistor Value R1 (Pins 2 and 3) vs.
Drift Compensation
c. Specific field TC ≈ –200 ppm (Alnico), –2000 ppm
(Ferrite), 0 ppm (electromagnet) etc.
GAIN AND OFFSET
d. R1, TC. The operation of the AD22151 can be bipolar (i.e., 0 Gauss =
The final value of target compensation also dictates the use of VCC/2) or a ratiometric offset can be implemented to Position
either Pin 1 or Pin 2. Pin 1 is provided to allow for large nega- Zero Gauss point at some other potential (i.e., 0.25 V).
tive field TC such as ferrite magnets, thus R1 would be con- The gain of the sensor can be set by the appropriate R2 and R3
nected to Pins 1 and 3. resistor values (see Figure 1) such that:
Pin 2 uses an internal resistive TC to optimize smaller field
coefficients such as Alnico, down to 0 ppm coefficients when R3
Gain = 1+ × 0.4 mV /G (1)
only the sensor gain TC itself is dominant. The TC of R1 itself R2
will also effect the compensation and as such a low TC resistor However, if an offset is required to position the quiescent out-
(± 50 ppm) is recommended. put at some other voltage then the gain relationship is modified
Figures 10 and 11 indicate R1 resistor values and their associ- to:
ated effectiveness for Pins 1 and 2 respectively. Note that the
indicated drift response in both cases incorporates the intrinsic R3
Gain = 1+ × 0.4 mV /G (2)
Hall sensitivity TC (BTCU). (R2iR4)
For example, the AD22151 sensor is to be used in conjunction The offset that R4 introduces is:
with an Alnico material permanent magnet. The TC of such
magnets is ≈ –200 ppm (see Figures 5 and 6). Figure 11 indi-
cates that a compensating drift of +200 ppm at Pin 3 requires a Offset =
R3
(R3 + R4)
(
× V CC –V OUT ) (3)
nominal value of R1 = 18 kΩ (assuming negligible drift of R1
itself). For example:
At VCC = 5 V at room temperature, the internal gain of the
3500
sensor is approximately 0.4 mV/Gauss. If a sensitivity of 6 mV/
Gauss is required with a quiescent output voltage of 1 V, the
3000
following calculations apply (see Figure 2 ).
2500 A value for R3 would be selected that complied with the various
considerations of current and power dissipation, trim ranges (if
DRIFT – ppm

2000 applicable), etc. For the purpose of example assume a value of

85 kΩ.
1500
To achieve a quiescent offset of 1 V requires a value for R4 as:
1000
V CC 
 2  –1
500
  (4)
= 0.375
0
V CC –1
0 5 10 15 20 25 30
R1 – kV Thus:
Figure 10. Typical Resistor Value R1 vs. (Pins 1 and 3)
 85 kΩ
Drift Compensation R4 =   – 85 kΩ = 141.666 kΩ (5)
 0.375 
The gain required would be 6/0.4 (mV/Gauss) = 15

REV. 0 –5–
AD22151
Knowing the values of R3 and R4 from above, and noting Equa- 7

tion 2, the parallel combination of R2 and R4 required is:

6

85 kΩ 3dB FREQ. (kHz)

= 6.071 kΩ
(15 –1) 5

FREQUENCY– kHz
4
Thus:

 
3

 
1 2
R2 =   = 6.342 kΩ
 1   1 
  –  1
  6.071 kΩ 141.666 kΩ 
0
1 2 3 4 5 6
NOISE GAIN – mV/GAUSS
The principle noise component in the sensor is thermal noise
from the Hall cell. Clock feedthrough into the output signal is Figure 13. Small-Signal Gain Bandwidth
largely suppressed with application of a supply bypass capacitor.
Figure 12 shows the power spectral density (PSD) of the output TEK STOP: 25.0 kS/s [
3ACQS
[
T
signal for a gain of 5 mV/Gauss. The effective bandwidth of the
sensor is approximately 5.7 kHz. This is shown by Figure 13
small signal bandwidth vs. gain. The PSD indicates an rms CH2 PK-PK
19.2mV
noise voltage of 2.8 mV within the 3 dB bandwidth of the sen-
sor. A wideband measurement of 250 MHz indicates 3.2 mV
rms (see Figure 14a).
2 T
In many position sensing applications bandwidth requirements
can be as low as 100 Hz. Passing the output signal through an
LP filter, for example 100 Hz, would reduce the rms noise volt-
age to ≈1 mV. A dominant pole may be introduced into the
output amplifier response by connection of a capacitor across
feedback resistor R3, as a simple means of reducing noise at the
expense of bandwidth. Figure 14b indicates the output signal of CH2 10.0mV BW M2.00ms
a 5 mV/G sensor bandwidth limited to 180 Hz with a 0.01 µF
feedback capacitor. Figure 14a. Peak-to-Peak Full Bandwidth (10 mV/Division)

Note: Measurements taken with 0.1 µF decoupling capacitor 7ACQS

TEK STOP: 25.0 kS/s [ T [
between VCC and GND at +25°C.

B MARKER X 64Hz Y: 3.351 mH

100 CH2 PK-PK
mH 4.4mV

LOGMAG
5 dB
/div 2 T

CH2 10.0mV BW M2.00ms

Figure 14b. Peak-to-Peak 180 Hz Bandwidth

1 (10 mV/Division)
mH
START: 64 Hz STOP: 25.6 kHz
NOISE: PSD (8 mV/GAUSS) RMS: 64

Figure 12. Power Spectral Density (5 mV/G)

–6– REV. 0
 AD22151
0.06 2.496
0.05

0.04 2.494

0.03

0.02 2.492
% ERROR

0.01

VOLTS
2.490
0
GAIN = 3.78mV/G
–0.01
2.488
–0.02

–0.03
2.486
–0.04
–0.05 2.484
–600 –400 –200 0 200 400 600 140 120 100 80 60 40 20 0 –20 –40
FIELD – Gauss TEMPERATURE – 8C

Figure 15. Integral Nonlinearity vs. Field Figure 16. Absolute Offset Volts vs. Temperature

REV. 0 –7–
AD22151
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).

8-Lead SOIC
(SO-8)

0.1968 (5.00)

C3213–8–10/97
0.1890 (4.80)

8 5
0.1574 (4.00) 0.2440 (6.20)
0.1497 (3.80) 1 4 0.2284 (5.80)

PIN 1 0.0688 (1.75) 0.0196 (0.50)

x 45°
0.0098 (0.25) 0.0532 (1.35) 0.0099 (0.25)
0.0040 (0.10)

8°
0.0500 0.0192 (0.49) 0°
SEATING (1.27) 0.0138 (0.35) 0.0098 (0.25) 0.0500 (1.27)
PLANE BSC 0.0075 (0.19) 0.0160 (0.41)

PRINTED IN U.S.A.

–8– REV. 0