PD - 90866A

IRLL014
HEXFET® Power MOSFET
l Surface Mount
l Available in Tape & Reel D
l Dynamic dv/dt Rating VDSS = 60V
l Logic-Level Gate Drive
l RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20Ω
l Fast Switching G
l Ease of Paralleling
ID = 2.7A
Description S
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.

The SOT-223 package is designed for surface-mount using

vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of S O T -2 2 3
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10 V 2.7
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 1.7
A
IDM Pulsed Drain Current  22
PD @Tc = 25°C Power Dissipation 3.1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.0 W
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
VGS Gate-to-Source Voltage -/+10 V
EAS Single Pulse Avalanche Energy‚ 100 mJ
IAR Avalanche Current 2.7 A
EAR Repetitive Avalanche Energy 0.31 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 4.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150
°C
Soldewring Temperature, for 10 seconds 300 (1.6mm from case)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-PCB ––– 40
°C/W
RθJA Junction-to-Ambient. (PCB Mount)** ––– 60
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. 2/1/99

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J = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.20 VGS = 5.0V, ID = 1.6A „
RDS(on) Static Drain-to-Source On-Resistance
––– ––– 0.28 Ω VGS = 4.0V, ID = 1.4A „
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 3.2 ––– ––– S VDS = 25V, ID = 1.6 A
––– ––– 25 VDS = 60V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
Qg Total Gate Charge ––– ––– 8.4 ID = 10A
Qgs Gate-to-Source Charge ––– ––– 3.5 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 6.0 VGS = 5.0V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 9.3 ––– VDD = 30V
tr Rise Time ––– 110 ––– ID = 10A
ns
td(off) Turn-Off Delay Time ––– 17 ––– RG = 12 Ω
tf Fall Time –– 26 ––– R D = 2.8 Ω, See Fig. 10 „
LD Internal Drain Inductance ––– 4.0 ––– Between lead, 6mm(0.25in) D

nH from package and center

G

LS of die contact.
Internal Source Inductance ––– 6.0 ––– S

Ciss Input Capacitance ––– 400 ––– VGS = 0V

Coss Output Capacitance ––– 170 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– 2.7
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse
––– ––– 22
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 2.7A, VGS = 0V „
trr Reverse Recovery Time ––– 65 130 ns TJ = 25°C, IF = 10A
Qrr Reverse RecoveryCharge ––– 0.33 0.65 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by ƒ ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
‚ VDD=25V, starting TJ = 25°C, L =16 mH
RG = 25Ω, IAS = 2.7A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%.

Electrical Characteristics @ T
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Package Outline
SOT-223 (TO-261AA) Outline

Part Marking Information

SOT-223 E X A M P L E : TH IS IS A N IR F L 0 1 4

W AFER
PART NUMBER LOT CODE
F L 01 4
X X XX X X
IN TE R N A TIO N A L 31 4
R E C TIF IE R D A TE C O D E (Y W W )
LO G O Y = L A S T D IG IT O F TH E Y E A R
TO P W W = W EEK B O TTO M

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Tape & Reel Information
SOT-223 Outline

4 .1 0 (.1 6 1) 0 .3 5 (.0 1 3)
3 .9 0 (.1 5 4) 1 .8 5 (.0 7 2 )
2 .0 5 (.0 80 ) 1 .6 5 (.0 6 5 ) 0 .2 5 (.0 1 0)
1 .9 5 (.0 77 )
TR

7 .5 5 (.2 9 7)
7 .4 5 (.2 9 4)
1 6 .3 0 (.6 4 1 )
7 .6 0 (.2 9 9 ) 1 5 .7 0 (.6 1 9 )
7 .4 0 (.2 9 2 )

1 .6 0 (.0 6 2)
1 .5 0 (.0 5 9)
T YP .
F E E D D IR E C T IO N
7 .1 0 (.2 79 ) 2 .3 0 (.0 9 0 )
6 .9 0 (.2 72 ) 2 .1 0 (.0 8 3 )
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )

NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T LIN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 .
3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S .

1 3 .2 0 (.5 1 9 ) 1 5.40 (.6 0 7)

1 2 .8 0 (.5 0 4 ) 1 1.90 (.4 6 9)

330.00 5 0.00 (1 .9 6 9)
(13.000) M IN .
M A X.

1 8 .4 0 (.72 4 )
NO TES :
M AX .
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 1 4 .4 0 (.5 6 6 ) 4
3 . D IM E N S IO N M E A S U R E D @ H U B . 1 2 .4 0 (.4 8 8 )
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R ED G E . 3

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/99

Document Number: 90407 www.vishay.com

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 Legal Disclaimer Notice
Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

Document Number: 99901 www.vishay.com

Revision: 12-Mar-07 1