PD- 91888

IRL5602S
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = -20V
l 175°C Operating Temperature
l P-Channel
RDS(on) = 0.042W
l Fast Switching G
l Fully Avalanche Rated
ID = -24A
S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.

The D2Pak is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is D 2 Pak
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V -24
ID @ TC = 100°C Continuous Drain Current, VGS @ -4.5V -17 A
IDM Pulsed Drain Current  -96
PD @TC = 25°C Power Dissipation 75 W
Linear Derating Factor 0.5 W/°C
VGS Gate-to-Source Voltage ± 8.0 V
EAS Single Pulse Avalanche Energy‚ 290 mJ
IAR Avalanche Current -12 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -0.81 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance
Parameter Typ. Max. Units
RqJC Junction-to-Case ––– 2.0
°C/W
RqJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
www.irf.com 1
5/11/99
IRL5602S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– -0.013 ––– V/°C Reference to 25°C, ID = -1mA…
––– ––– 0.042 VGS = -4.5V, ID = -12A „
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.062 W VGS = -2.7V, ID = -10A „
––– ––– 0.075 VGS = -2.5V, ID = -10A „
VGS(th) Gate Threshold Voltage -0.7 ––– -1.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 12 ––– ––– S VDS = -15V, ID = -12A…
––– ––– -25 VDS = -20V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -16V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 500 VGS = -8.0V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -500 VGS = 8.0V
Qg Total Gate Charge ––– ––– 44 ID = -12A
Qgs Gate-to-Source Charge ––– ––– 8.7 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = -4.5V, See Fig. 6 and 13 „…
td(on) Turn-On Delay Time ––– 9.7 ––– VDD = -10 V
tr Rise Time ––– 73 ––– ID = -12A
ns
td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.0W, VGS = 4.5V
tf Fall Time ––– 84 ––– RD = 0.8W, See Fig. 10„…
Between lead,
LS Internal Source Inductance ––– 7.5 ––– nH
and center of die contact
Ciss Input Capacitance ––– 1460 ––– VGS = 0V
Coss Output Capacitance ––– 790 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 370 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -24

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -96
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.4 V TJ = 25°C, IS = -12A, VGS = 0V „
trr Reverse Recovery Time ––– 58 88 ns TJ = 25°C, IF = -12A
Qrr Reverse RecoveryCharge ––– 54 81 nC di/dt = -100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD £ -12A, di/dt £ 120A/µs, VDD £ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ £ 175°C
‚ Starting TJ = 25°C, L = 3.0mH „ Pulse width £ 300µs; duty cycle £ 2%.
RG = 25W, IAS = -14A. (See Figure 12)
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
 IRL5602S

100 VGS
100
VGS
TOP -15V TOP -15V
-12V -12V
-10V
-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

-10V
-7.0V -7.0V
-5.0V -5.0V
-4.5V -4.5V
-2.7V -2.7V
BOTTOM -2.0V BOTTOM -2.0V

10 10

-2.0V
-2.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
1 1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.5
ID = -24A
RDS(on) , Drain-to-Source On Resistance

TJ = 25 ° C
-I D , Drain-to-Source Current (A)

3.0

TJ = 175 ° C
2.5
(Normalized)

2.0
10
1.5

1.0

0.5
V DS = -15V
20µs PULSE WIDTH VGS = -4.5V
1 0.0
2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
 IRL5602S

2800 15
VGS = 0V, f = 1MHz ID = -12A
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd

-VGS , Gate-to-Source Voltage (V)

2400 VDS =-16V
Coss = Cds + Cgd 12 VDS =-10V
C, Capacitance (pF)

2000
Ciss
9
1600

1200 Coss
6

800
Crss 3
400
FOR TEST CIRCUIT
SEE FIGURE 13
0 0
1 10 100 0 10 20 30 40 50 60 70
-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

-IID , Drain Current (A)

10 100
TJ = 175 ° C 100us

TJ = 25 ° C 1ms
1 10
10ms

TC = 25 ° C
TJ = 175 ° C
V GS = 0 V Single Pulse
0.1 1
0.0 0.4 0.8 1.2 1.6 1 10 100
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRL5602S

25
RD
VDS

20 VGS
D.U.T.
RG
-ID , Drain Current (A)

-
+ VDD
15
-4.5V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
10

5
td(on) tr t d(off) tf
VGS
0 10%
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature

10
Thermal Response (Z thJC )

1 D = 0.50

0.20

0.10
0.05 PDM
0.1 0.02 SINGLE PULSE
0.01 t1
(THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRL5602S

L
1000
ID

EAS , Single Pulse Avalanche Energy (mJ)

VDS
TOP -5.9A
-10A
RG D.U.T 800 BOTTOM -14A
VDD
IAS A
-20V DRIVER
tp 0.01Ω
600

400
15V

Fig 12a. Unclamped Inductive Test Circuit 200

0
I AS 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-4.5V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com
 IRL5602S
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* · Low Stray Inductance
· Ground Plane
ƒ
· Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG · dv/dt controlled by RG +
· ISD controlled by Duty Factor "D" VDD
-
· D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

www.irf.com 7
IRL5602S
TO-263AB Package Details
10.54 (.415) -B- 10.16 (.400)
10.29 (.405) 4.69 (.185) REF.
1.40 (.055) 4.20 (.165)
-A- 1.32 (.052)
MAX. 1.22 (.048)
2
6.47 (.255)
6.18 (.243)

1.78 (.070) 15.49 (.610) 2.79 (.110)

1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)

5.28 (.208) 2.61 (.103)

4.78 (.188) 2.32 (.091)

8.89 (.350)
1.40 (.055) 1.39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1.14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200) 0.25 (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

NOTES: LEAD ASSIGNMENTS 8.89 (.350)

1 DIMENSIONS AFTER SOLDER DIP. 1 - GATE
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 - DRAIN 17.78 (.700)
3 - SOURCE
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
TRR
2.54 (.100)
2.08 (.082) 2X
1.60 (.063)
1.50 (.059) 2X
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

Part Marking
(This is an IRF530S with assembly lot
1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL code 9B1M )
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
A
INTERNATIONAL PART NUMBER
FEED DIRECTION
Tape & Reel RECTIFIER
LOGO
F530S
9246
13.50 (.532) 27.40 (1.079) 9B 1M DATE CODE
12.80 (.504) 23.90 (.941)
(YYWW)
ASSEMBLY
4 YY = YEAR
LOT CODE
WW = WEEK

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 5/99
8 www.irf.com