AOD2908

100V N-Channel MOSFET

General Description Product Summary

The AOD2908 uses Trench MOSFET technology that is VDS 100V

uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A
frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 13.5mΩ
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
100% UIS Tested
100% Rg Tested

TO252
DPAK D
TopView Bottom View

D G G
S D
S
S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 52
ID
Current TC=100°C 36
I A
Pulsed Drain Current IDM 120
J
Pulsed Drain Current IDM 150
Continuous Drain TA=25°C 9
IDSM A
Current TA=70°C 7
Avalanche Current C IAS 20 A
Avalanche energy L=0.1mH C EAS 20 mJ
TC=25°C 75
PD W
Power Dissipation B TC=100°C 37
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 15 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 41 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.5 2 °C/W

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 AOD2908

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.7 3.3 4.1 V
ID(ON) On state drain current VGS=10V, VDS=5V,PW=260µs 120 A
ID(ON) On state drain current VGS=10V, VDS=5V,PW=1µs 150 A
VGS=10V, ID=20A 11 13.5
RDS(ON) Static Drain-Source On-Resistance mΩ
TJ=125°C 18 23
gFS Forward Transconductance VDS=5V, ID=20A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
G
IS Maximum Body-Diode Continuous Current 70 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1250 1670 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 727 970 pF
Crss Reverse Transfer Capacitance 25 43 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 19 27 nC
Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A 5.5 nC
Qgd Gate Drain Charge 6 nC
tD(on) Turn-On DelayTime 7.5 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=2.5Ω, 14 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15 ns
tf Turn-Off Fall Time 14 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 39 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 140 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I: The IDM is obtained using 260µs pulses.
J: The IDM is obtained using 1µs pulses.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 6

 AOD2908

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V VDS=5V
7V
80 80

60 60
ID (A)

ID(A)
6V
40 40 125°C

20 20 25°C
Vgs=5V

0 0
0 1 2 3 4 5 2 3 4 5 6 7 8
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 2.2

18
Normalized On-Resistance 2
VGS=10V
1.8 ID=20A
16
Ω)
RDS(ON) (mΩ

1.6 17
14 5
VGS=10V 1.4
2
12
1.2 10
10 1

8 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A) 0
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) 18Temperature
Figure 4: On-Resistance vs. Junction
(Note E)

40 1.0E+02
ID=20A
1.0E+01
32 40
1.0E+00
125°C
Ω)
RDS(ON) (mΩ

1.0E-01
IS (A)

24 125°C
1.0E-02
25°C
1.0E-03
16
1.0E-04
25°C
8 1.0E-05

5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOD2908

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000
VDS=50V
ID=20A
8 1600
Ciss

Capacitance (pF)
VGS (Volts)

6 1200

4 800
Coss

2 400
Crss

0 0
0 4 8 12 16 20 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 800
TJ(Max)=175°C
TC=25°C
100.0 10µs
10µs 600
RDS(ON)
ID (Amps)

Power (W)

10.0 100µs 17
1ms 400 5
1.0 10ms 2
DC 10
TJ(Max)=175°C 200
0.1
TC=25°C

0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Area (Note F)
for (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=2°C/W 40

0.1

PD
0.01
Ton
T
Single Pulse
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD2908

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 120

Power Dissipation (W)

60 90
Current rating ID(A)

40 60

20 30

0 0

0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

°C)
TCASE (° °C)
TCASE (°
Figure 17: Current De-rating (Note F) Figure 18: Power De-rating (Note F)

100 10000
IAR (A) Peak Avalanche Current

TA=25°C
1000
TA=25°C
17
Power (W)

TA=100°C
5
100
TA=125°C
2
10
10
TA=150°C

10 1
1 10 100 1E-05 0.001 0.1 10 0 1000
µs)
Time in avalanche, tA (µ Pulse Width (s) 18
Figure 19: Single Pulse Avalanche capability Figure 20: Single Pulse Power Rating Junction-to-
(Note C) Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOD2908

AOW298

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 1 : Mar. 2012 www.aosmd.com Page 6 of 6