AON6280

80V N-Channel MOSFET

General Description Product Summary

The AON6280 uses trench MOSFET technology that is VDS 80V

uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A
frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 4.1mΩ
switching power losses are minimized due to an
RDS(ON) (at VGS=6V) < 5.0mΩ
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
100% UIS Tested
100% Rg Tested

DFN5X6 D
Top View
Top View Bottom View
1 8

2 7

3 6

4 5
G

PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 80 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 65 A
Pulsed Drain Current C IDM 230
Continuous Drain TA=25°C 17
IDSM A
Current TA=70°C 13
C
Avalanche Current IAS 50 A
C
Avalanche energy L=0.1mH EAS 125 mJ
TC=25°C 83
PD W
Power Dissipation B TC=100°C 33
TA=25°C 7.3
PDSM W
Power Dissipation A TA=70°C 4.7
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

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 AON6280

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 80 V
VDS=80V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2 2.6 3.2 V
ID(ON) On state drain current VGS=10V, VDS=5V 230 A
VGS=10V, ID=20A 3.4 4.1
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.8 7
VGS=6V, ID=20A 4 5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 76 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous CurrentG 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3930 pF
Coss Output Capacitance VGS=0V, VDS=40V, f=1MHz 592 pF
Crss Reverse Transfer Capacitance 66 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.7 1.1 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 58 82 nC
Qgs Gate Source Charge VGS=10V, VDS=40V, ID=20A 15 nC
Qgd Gate Drain Charge 14 nC
tD(on) Turn-On DelayTime 13 ns
tr Turn-On Rise Time VGS=10V, VDS=40V, RL=2Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 32 ns
tf Turn-Off Fall Time 9 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 36 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 153 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON6280

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
5V
6V VDS=5V
4.5V
80 10V 80

60 60
ID (A)

ID(A)
40 40
4V

125°C
20 20
25°C
VGS=3.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 2

Normalized On-Resistance
8 1.8
VGS=10V
ID=20A
1.6
Ω)
RDS(ON) (mΩ

6
VGS=6V
17
1.4 5
4 2
1.2 VGS=6V
ID=20A 10
2 VGS=10V
1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

12 1.0E+02
ID=20A
10 1.0E+01
40
1.0E+00
8 125°C
125°C
Ω)
RDS(ON) (mΩ

1.0E-01
IS (A)

6
1.0E-02
25°C
4
1.0E-03

2 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6280

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000
VDS=40V
ID=20A Ciss
8 4000

Capacitance (pF)
VGS (Volts)

6 3000

4 2000
Coss

2 1000
Crss

0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 RDS(ON) 10µs 400
10µs
ID (Amps)

Power (W)

10.0 100µs 300 17

1ms 5
DC
1.0 10ms 200 2
10
TJ(Max)=150°C
0.1 100
TC=25°C

0.0 0
0.01 0.1 1 10 100 1000
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Operating Area (Note F) (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=1.5°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6280

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 100
IAR (A) Peak Avalanche Current

80

Power Dissipation (W)

TA=25°C 60
TA=100°C
100
40
TA=150°C

20
TA=125°C
10 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

100 10000

TA=25°C
80
1000
Current rating ID(A)

17
Power (W)

60
5
100
2
40
10
10
20

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=55°C/W 40

0.1

PD
0.01
Ton
Single Pulse
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000 10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6280

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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