AON6280

80V N-Channel AlphaSGT TM

General Description Product Summary

The AON6280 uses trench MOSFET technology that is VDS 80V

uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A
frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 4.1mW
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss. RDS(ON) (at VGS=6V) < 5.0mW
This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
100% UIS Tested
100% Rg Tested

DFN5X6 D
Top View
Top View Bottom View

S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D G

PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 80 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 100
ID
Current TC=100°C 65 A
Pulsed Drain Current C IDM 230
Continuous Drain TA=25°C 17
IDSM A
Current TA=70°C 13
Avalanche Current C IAS 50 A
Avalanche energy L=0.1mH C EAS 125 mJ
TC=25°C 83
PD W
Power Dissipation B TC=100°C 33
TA=25°C 7.3
PDSM W
Power Dissipation A TA=70°C 4.7
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 40 55 °C/W
Maximum Junction-to-Case Steady-State RqJC 1 1.5 °C/W

Rev 2.1 : September 2023 www.aosmd.com Page 1 of 6

 AON6280

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 V
VDS=80V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 2 2.6 3.2 V
ID(ON) On state drain current VGS=10V, VDS=5V 230 A
VGS=10V, ID=20A 3.4 4.1
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.8 7
VGS=6V, ID=20A 4 5 mW
gFS Forward Transconductance VDS=5V, ID=20A 76 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 95 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3930 pF
Coss Output Capacitance VGS=0V, VDS=40V, f=1MHz 592 pF
Crss Reverse Transfer Capacitance 66 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.7 1.1 W
SWITCHING PARAMETERS
Qg Total Gate Charge 58 82 nC
Qgs Gate Source Charge VGS=10V, VDS=40V, ID=20A 15 nC
Qgd Gate Drain Charge 14 nC
tD(on) Turn-On DelayTime 13 ns
tr Turn-On Rise Time VGS=10V, VDS=40V, RL=2W, 6 ns
tD(off) Turn-Off DelayTime RGEN=3W 32 ns
tf Turn-Off Fall Time 9 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms 36 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 153 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

Rev 2.1 : September 2023 www.aosmd.com Page 2 of 6

 AON6280

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
5V
6V VDS=5V
80 4.5V
10V 80

60 60
ID (A)

ID(A)
40 40
4V

20 125°C
20
25°C
VGS=3.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 2
Normalized On-Resistance
8 1.8
VGS=10V
ID=20A
1.6
RDS(ON) (mW)

6
VGS=6V 17
1.4 5
4 2
1.2 VGS=6V
ID=20A 10
2 VGS=10V
1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C) 0
Gate Voltage (Note E) 18 Temperature
Figure 4: On-Resistance vs. Junction
(Note E)

12 1.0E+02
ID=20A
10 1.0E+01
40
1.0E+00
8 125°C
125°C
RDS(ON) (mW)

1.0E-01
IS (A)

6
1.0E-02
25°C
4
1.0E-03

2 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 2.1 : September 2023 www.aosmd.com Page 3 of 6

 AON6280

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000
VDS=40V
ID=20A Ciss
8 4000

Capacitance (pF)
VGS (Volts)

6 3000

4 2000
Coss

2 1000
Crss

0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 600
TJ(Max)=150°C
500 TC=25°C
100.0 10ms
RDS(ON)
10ms 400
Power (W)
ID (Amps)

10.0 100ms 17
1ms 300 5
DC
1.0 10ms 2
200 10
TJ(Max)=150°C
0.1
100

0.0 0
0.01 0.1 1 10 100 1000
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC
Thermal Resistance

RqJC=1.5°C/W 40
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 2.1 : September 2023 www.aosmd.com Page 4 of 6

 AON6280

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 100
IAR (A) Peak Avalanche Current

80

Power Dissipation (W)

TA=25°C 60
TA=100°C
100
40
TA=150°C

20
TA=125°C
10 0
1 10 100 1000 0 25 50 75 100 125 150
Time in avalanche, t A (ms) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

120 10000

100 TA=25°C
1000
Current rating ID(A)

80
17
Power (W)

5
60 100
2
40 10
10
20

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient
Thermal Resistance

1 RqJA=55°C/W 40

0.1

PD
0.01
Ton
Single Pulse
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000 10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Rev 2.1 : September 2023 www.aosmd.com Page 5 of 6

 AON6280

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 2.1 : September 2023 www.aosmd.com Page 6 of 6