MOT NPN-TRANSISTOR

5551

NPN型 小功率 贴片高压三极管

NPN High Voltage Transistor SMD 5551
NPN, BEC
■ Complementary to5551 General Purpose Transistors
■ Transistor Polarity: NPN 对应其他工业型号
■ Transistor pinout: BEC
■ SOT-23 Package
■ Marking Code: G1
■ hFE: 100~200, 200~300
■ Ldeal for Medium Power Amplification and Switching

Inner circuit 5551 元件标识（打印）

1
2 G
1. Base
2. Emitter
1
3. Coollector

SOT-23 内部结构 SOT-23 管脚排列 DEVICE MARKING: Y1

■ CLASSIFICATION OF hFE
RANK L H

RANGE 100~200 200~300

 ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Collector -Base Voltage VCBO 180 V

Collector -Emitter Voltage VCEO 160 V

Emitter -Base Voltage VEBO 6 V

DC Collector Current IC 600 mA

Power Dissipation PD 350 mW

Junction Temperature TJ +150 °C

Storage Temperature TSTG -40 ~ +150 °C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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5551

 ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage VCBO IC=100A, IE=0 180 V
Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0 160 V
Emitter-Base Breakdown Voltage VEBO IE=10μA, IC=0 6 V
Collector Cut-off Current ICBO VCB=120V, IE=0 50 nA
Emitter Cut-off Current IEBO VBE=4V, IC =0 50 nA
VCE=5V, IC =1mA 80
DC Current Gain(note) hFE VCE=5V, IC =10mA 80 160 400
VCE=5V, IC =50mA 80
IC=10mA, IB=1mA 0.15 V
Collector-Emitter Saturation Voltage VCE(SAT)
IC=50mA, IB=5mA 0.2 V
IC=10mA, IB=1mA 1 V
Base-Emitter Saturation Voltage VBE(SAT)
IC=50mA, IB=5mA 1 V
Current Gain Bandwidth Product fT VCE=10V, IC =10mA, f=100MHz 100 300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 6.0 pF
IC=0.25mA, VCE=5V
Noise Figure NF 8 dB
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty Cycle<2%

 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 357 °C/W
Junction to Case θJC 104 °C/W

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NPN-TRANSISTOR

■ TYPICAL CHARACTERISTICS

Fig.1 Collector Output Capacitance Fig.2 DC Current Gain

10 3
10
Capacitance, Cob (pF)

VCE=5V
8
f=1MHz

DC current Gain, hFE

IE=0
2
10
6

4
1
10

0 0
10
0 1 2 -1 0 1 2 3
10 10 10 10 10 10 10 10

Collector-Base Voltage (V) Collector Current, Ic (mA)

Fig.3 Base-Emitter on Voltage Fig.4 Saturation Voltage

3 1
10 10
Ic=10*IB
Collector Current, Ic (mA)

Saturation Voltage (V)

VCE=5V
2 10
0 VBE(SAT)
10

1 -1
10 10

VCE(SAT)

0 -2
10 10
0 0.2 0.4 0.6 0.8 1.0 -1 0 1 2 3
10 10 10 10 10

Base-Emitter Voltage (V) Collector Current, Ic (mA)

Fig.5 Current Gain-Bandwidth

SAFE OPERATING AREA
Product
Current Gain-Bandwidth Product, fT (MHz)

3 10
10
COLLECTOR CURRENT, Ic (A)

VCE=10V 1
10

2
m

10
S

0.1
1.
0S

1
10 0.01

0 0.001
10 10
0 1 2 3 1 100 1000
10 10 10 10

Collector Current, Ic (mA) Forward Voltage-VCE(V)

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NPN-TRANSISTOR

■ DIMENSION 外形封装尺寸数据（Package: SOT-23 Package Code: MM ）

单位（UNIT）：mm
序号 数值及公差
A 2.90±0.10
B 1.30±0.10
C 1.00±0.10
D 0.40±0.10
E 2.40±0.20
G 1.90±0.10
H 0.95±0.05
J 0.13±0.05
K 0.00-0.10
M ≥0.20
N 0.60±0.10
P 7±2°

Packing
SOT-23 包装规格
SMD片式表面贴封装
包装方式: 载带卷盘包装
Tape & Reel, 3Kpcs/Reel
每卷数量3000只（3Kpcs/Reel）
每盒数量45000只（45Kpcs/BOX）
每箱数量1800000只（180Kpcs/Cartons）

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NPN-TRANSISTOR

SOT-23 Tape and reel

SOT-23 Embossed Carrier Tape

P0 P1

d
C

E
A

F
W

B
A
P A A-A

Dimensions are in millimeter

Pkg type A B C d E F P0 P P1 W
SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00

SOT-23 Tape Leader and Trailer

Trailer Tape Leader Tape
Components 100±2 Empty Pockets
50±2 Empty Pockets

SOT-23 Reel
D
W2
G

3000
H 2500
2000

1500

1000

500
D1

D2

W1

Dimensions are in millimeter

Reel Option D D1 D2 G H I W1 W2
7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30

REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg)
3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220

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