N

2N5401 / MMBT5401
Discrete POWER & Signal
Technologies

2N5401 MMBT5401

E
C TO-92
BE SOT-23 B
Mark: 2L

PNP General Purpose Amplifier

This device is designed as a general purpose amplifier and switch
for applications requiring high voltages. Sourced from Process 74.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 150 V
VCBO Collector-Base Voltage 160 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5401 *MMBT5401
PD Total Device Dissipation 625 350 mW
Derate above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 150 V
V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 160 V
V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 V
ICBO Collector Cutoff Current VCB = 120 V, IE = 0 50 nA
VCB = 120 V, IE = 0, TA = 100°C 50 µA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

ON CHARACTERISTICS*
hFE DC Current Gain I C = 1.0 mA, VCE = 5.0 V 50
I C = 10 mA, VCE = 5.0 V 60 240
I C = 50 mA, VCE = 5.0 V 50
VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA 0.2 V
I C = 50 mA, IB = 5.0 mA 0.5 V
VBE( sat) Base-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA 1.0 V
I C = 50 mA, IB = 5.0 mA 1.0 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 10 V, 100 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, 6.0 pF
f = 1.0 MHz
NF Noise Figure I C = 250 µA, VCE = 5.0 V, 8.0 dB
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2
Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p
Itf=0 Vtf=0 Xtf=0 Rb=10)
 2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

- TYPICAL PULSED CURRENT GAIN

vs Collector Current Voltage vs Collector Current

0.4
200 β = 10
V CE = 5V

150 0.3
125 °C

100 25 °C 0.2
25 °C

- 40 ºC 125 ºC
50 0.1
- 40 ºC
0 0
0.0001 0.001 0.01 0.1 1 0.1 1 10 100
FE

I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRENT (mA)

h

P 74

Base-Emitter Saturation Base-Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)

1 1

0.8 0.8
- 40 ºC - 40 ºC

25 °C 25 °C

0.6 0.6
125 ºC 125 ºC

0.4
0.4 V CE = 5V
β = 10
0.2
0.2 0.1 1 10 100
0.1 1 10 100
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA) P 4
P 4

Collector-Cutoff Current Collector-Emitter Breakdown

vs Ambient Temperature Voltage with Resistance
I CBO- COLLECTOR CURRENT (nA)

Between Emitter-Base
BV CER - BREAKDOWN VOLTAGE (V)

100
V CB = 100V 220

10
210

1 200

190
0.1
180

170
25 50 75 100 125 150 0.1 1 10 100 1000
T A - AMBIENT TEMPERATURE (ºC) RESISTANCE (k Ω)
P 4
 2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Input and Output Capacitance Power Dissipation vs

vs Reverse Voltage Ambient Temperature
80 700

PD - POWER DISSIPATION (mW)

f = 1.0 MHz
600
CAPACITANCE (pF)

60
500 TO-92

400 SOT-23
40
C eb 300

200
20

C cb 100

0 0
0.1 1 10 100 0 25 50 75 100 125 150
V R - REVERSE BIAS VOLTAGE(V) TEMPERATURE ( o C)
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