SS12, SS14

Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features http://onsemi.com
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications SCHOTTKY BARRIER
where compact size and weight are critical to the system. RECTIFIER
• Small Compact Surface Mountable Package with J−Bent Leads 1.0 AMPERES
• Rectangular Package for Automated Handling 20, 40 VOLTS
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal SMA
CASE 403D
Leads are Readily Solderable
PLASTIC
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm tape, 5000 units per 13 inch reel MARKING DIAGRAM
• Polarity: Cathode Lead Indicated by Polarity Band
• Marking: SS12, SS14 SS1x
• Device Meets MSL 1 Requirements
• ESD Ratings: Human Body Model, 3B (> 8000 V)
SS1x = Device Code
Machine Model, B (> 200 V) x = 2 or 4

ORDERING INFORMATION

Device Package Shipping†

SS12T3 SMA 5000/Tape & Reel
SS14T3 SMA 5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

February, 2005 − Rev. 2 SS12/D
 SS12, SS14

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage SS12 VR 20
SS14 40
Average Rectified Forward Current IO 1.0 A
(At Rated VR, TC = 120°C)

Peak Repetitive Forward Current IFRM 2.0 A

(At Rated VR, Square Wave, 20 kHz, TC = 120°C)

Non−Repetitive Peak Surge Current IFSM 60 A

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Storage/Operating Case Temperature Tstg, TC −55 to +150 °C

Operating Junction Temperature TJ −55 to +150 °C
Voltage Rate of Change dv/dt 10,000 V/
s
(Rated VR, TJ = 25°C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1) RJL 35 °C/W
Thermal Resistance − Junction−to−Ambient (Note 1) RJA 86

ELECTRICAL CHARACTERISTICS
VF TJ = 25°C V
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2 for other Values (IF = 1.0 A) 0.47
IR TJ = 25°C TJ = 100°C mA
Maximum Instantaneous Reverse Current
see Figure 4 for other Values (VR = 20 V) 0.045 2.0
(VR = 40 V) 0.1 5.0
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width ≤ 250
s, Duty Cycle ≤ 2.0%.

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 SS12, SS14

10 10
IF, INSTANTANEOUS FORWARD

IF, INSTANTANEOUS FORWARD

TJ = 100°C
CURRENT (A)

CURRENT (A)
TJ = 100°C

1 1
TJ = 150°C TJ = 25°C
TJ = 25°C
TJ = 150°C

TJ = −55°C TJ = −55°C

0.1 0.1
0.10 0.30 0.50 0.70 0.90 0.10 0.30 0.50 0.70 0.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

100E−3

IR, MAXIMUM REVERSE CURRENT (A)

100E−3
TJ = 150°C
IR, REVERSE CURRENT (A)

TJ = 150°C 10E−3
10E−3

TJ = 100°C
1E−3 TJ = 100°C 1E−3

100E−6 100E−6
TJ = 25°C

10E−6 10E−6
TJ = 25°C

1E−6 1E−6
0 10 20 30 40 0 10 20 30 40
VR, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

1.8 0.25
IO, AVERAGE FORWARD CURRENT

freq = 20 kHz Ipk/IO = 10

PFO, AVERAGE POWER DISSIPA-

1.6 dc Ipk/IO = 5 Ipk/IO = p

1.4 0.2 Ipk/IO = 20
1.2 Square Wave
0.15
TION (W)

1
Ipk/IO = p
(A)

0.8
Ipk/IO = 5 0.1
0.6 Ipk/IO = 10 Square Wave
Ipk/IO = 20 dc
0.4 0.05
0.2
0 0
25 45 65 85 105 125 145 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating Figure 6. Forward Power Dissipation

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 SS12, SS14

1000 1000
TJ = 100°C

D = 0.10 D = 0.20 D = 0.50

r(t), TRANSIENT THERMAL

C, CAPACITANCE (pF)

100

RESISTANCE
P(pk)
100 10

D = 0.05 t1
t2
1 D = 0.01 Duty Cycle, D = t1/t2

Single Pulse Test Type > Min Pad

10 0.1 Theta JC = min pad 1 oz C/W
0 5 10 15 20 25 30 35 40 45 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
VR, REVERSE VOLTAGE (V) t, TIME (sec)
Figure 7. Capacitance Figure 8. Thermal Response

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 SS12, SS14

PACKAGE DIMENSIONS

SMA
CASE 403D−02
ISSUE A
S NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS
403D−02.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
D B A 0.160 0.180 4.06 4.57
B 0.090 0.115 2.29 2.92
C 0.075 0.095 1.91 2.41
D 0.050 0.064 1.27 1.63
H 0.002 0.006 0.05 0.15
POLARITY INDICATOR OPTIONAL J 0.006 0.016 0.15 0.41
AS NEEDED K 0.030 0.060 0.76 1.52
S 0.190 0.220 4.83 5.59

H
K J

0.157
4.0

0.0787
2.0

0.0787 inches
2.0 mm

SMA FOOTPRINT

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 SS12, SS14

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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