MBR2045CT

Preferred Device

SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
• Guardring for Stress Protection http://onsemi.com
• Low Forward Voltage
• 150°C Operating Junction Temperature
SCHOTTKY BARRIER
• Epoxy Meets UL94, VO at 1/8″
RECTIFIER
Mechanical Characteristics:
• Case: Epoxy, Molded 20 AMPERES
• Weight: 1.9 grams (approximately) 45 VOLTS
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable 1
• Lead Temperature for Soldering Purposes: 2, 4
260°C Max. for 10 Seconds 3
• Shipped 50 units per plastic tube
• Marking: B2045
4
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 45 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IF(AV) 20 A
(Rated VR, TC = 135°C) 1
2
3
Peak Repetitive Forward Current IFRM 20 A
per Diode Leg (Rated VR, Square TO–220AB
Wave, 20 kHz, TC = 135°C) CASE 221A
PLASTIC
Non–Repetitive Peak Surge Current IFSM 150 A
(Surge Applied at Rated Load
MARKING DIAGRAM
Conditions Halfwave, Single
Phase, 60 Hz)
Peak Repetitive Reverse Surge IRRM 1.0 A
Current (2.0
s, 1.0 kHz) YY = Year
See Figure 11 YY WW WW = Work Week
B2045
Storage Temperature Range Tstg –65 to +175 °C B2045 = Device Code
AKA AKA = Diode Polarity
Operating Junction Temperature TJ –65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/
s

ORDERING INFORMATION

Device Package Shipping

MBR2045CT TO–220 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

May, 2001 – Rev. 1 MBR2045CT/D
 MBR2045CT

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Thermal Resistance, Junction to Case RθJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.) vF Volts
(iF = 10 Amps, TC = 125°C) 0.57
(iF = 20 Amps, TC = 125°C) 0.72
(iF = 20 Amps, TC = 25°C) 0.84
Maximum Instantaneous Reverse Current (Note 1.) iR mA
(Rated dc Voltage, TC = 125°C) 15
(Rated dc Voltage, TC = 25°C) 0.1
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

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 MBR2045CT

100 100
TJ = 150°C
TJ = 150°C
70 70
100°C 25°C
50 25°C 50 100°C

30 30

20 20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

10 10

7.0 7.0

5.0 5.0

3.0 3.0

2.0 2.0

1.0 1.0

0.7 0.7

0.5 0.5

0.3 0.3

0.2 0.2

0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage

100 200
IFSM , PEAK HALF-WAVE CURRENT (AMPS)

TJ = 150°C

10 125°C
IR , REVERSE CURRENT (mA)

100°C 100
1.0
75°C 70

0.1 50
25°C
0.01 30

0.001 20
0 5.0 10 15 20 25 30 35 40 45 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz

Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability

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 MBR2045CT

40 32
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED
35 28
I I
PK
(RESISTIVELOAD) PK
(RESISTIVELOAD)
30 I 24 I
AV AV
25 20
I SQUARE SQUARE
20 (CAPACITIVELOAD) PK
5 16
I WAVE WAVE
AV
15 12
10 dc
10 20 8.0
dc I
5.0 4.0 (CAPACITIVELOAD) PK
20, 10, 5
I
AV
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, R
JA = 16°C/W
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)

20 10

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

SQUARE dc RATED VOLTAGE APPLIED
18 RJA = 60°C/W
SINE WAVE WAVE
16 RESISTIVE LOAD 8.0 I
PK
(RESISTIVELOAD)
14 I I
(CAPACITIVELOAD) PK
5 AV
12 I 6.0
AV SQUARE
10
10 WAVE
20
8.0 4.0
6.0
dc
4.0 TJ = 150°C 2.0 I
(CAPACITIVELOAD) PK
20, 10, 5
2.0 I
AV
0 0
0 4.0 8.0 12 16 20 24 28 32 0 20 40 60 80 100 120 140 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (°C)

Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE

0.5

0.3
0.2 Ppk Ppk
(NORMALIZED)

DUTY CYCLE, D = tp/t1

tp
PEAK POWER, Ppk, is peak of an
0.1 TIME
equivalent square power pulse.
0.07 t1
0.05 ∆TJL = Ppk • RθJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
∆TJL = the increase in junction temperature above the lead temperature.
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

Figure 9. Thermal Response

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 MBR2045CT

1500
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
1000
majority carrier conduction, it is not subject to junction

C, CAPACITANCE (pF)
diode forward and reverse recovery transients due to minor- 700
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist- 500
ing of an ideal diode in parallel with a variable capacitance.
(See Figure 10.) MAXIMUM
Rectification efficiency measurements show that opera- 300
tion will be satisfactory up to several megahertz. For exam- TYPICAL
ple, relative waveform rectification efficiency is approxi- 200
mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to 150
RMS power in the load is 0.28 at this frequency, whereas 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
perfect rectification would yield 0.406 for sine wave inputs. VR, REVERSE VOLTAGE (VOLTS)
However, in contrast to ordinary junction diodes, the loss in
waveform efficiency is not indicative of power loss; it is Figure 10. Capacitance
simply a result of reverse current flow through the diode ca-
pacitance, which lowers the dc output voltage.

+150 V, 10 mAdc

2.0 kΩ

VCC 12 Vdc

+
D.U.T.
12 V 100 4.0 µF
2N2222

2.0 µs
1.0 kHz

CURRENT 2N6277
AMPLITUDE 100
ADJUST CARBON
0-10 AMPS

1.0 CARBON

1N5817

Figure 11. Test Circuit for dv/dt and

Reverse Surge Current

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 MBR2045CT

PACKAGE DIMENSIONS

TO–220
PLASTIC
CASE 221A–09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

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 MBR2045CT

Notes

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 MBR2045CT

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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