AO7411

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO7411 uses advanced trench technology to VDS (V) = -20V

provide excellent RDS(ON), low gate charge and ID = -1.8 A (V GS = -4.5V)
operation with gate voltages as low as 1.8V. This RDS(ON) < 120mΩ (VGS = -4.5V)
device is suitable for use as a load switch or in PWM RDS(ON) < 150mΩ (VGS = -2.5V)
applications. Standard Product AO7411 is Pb-free
RDS(ON) < 200mΩ (VGS = -1.8V)
(meets ROHS & Sony 259 specifications). AO7411L
is a Green Product ordering option. AO7411 and
AO7411L are electrically identical.

D
SC-70-6
(SOT 323)
Top View

D 1 6 D
G
D 2 5 D
S
G 3 4 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -1.8
Current A TA=70°C ID -1.5 A
B
Pulsed Drain Current IDM -10
TA=25°C 0.625
PD W
Power Dissipation A TA=70°C 0.4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 160 200 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 180 220 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 130 160 °C/W

Alpha & Omega Semiconductor, Ltd.

AO7411

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-16V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 -0.55 -0.8 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 A
VGS=-4.5V, ID=-1.8A 95 120
mΩ
TJ=125°C 129 160
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-1.6A 121 150 mΩ
VGS=-1.8V, ID=-1.0A 155 200 mΩ
gFS Forward Transconductance VDS=-5V, ID=-1.8A 4 7 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.83 -1 V
IS Maximum Body-Diode Continuous Current -0.6 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 524 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 93 pF
Crss Reverse Transfer Capacitance 73 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 12 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6.24 nC
VGS=-4.5V, VDS=-10V,
Qgs Gate Source Charge 0.52 nC
ID=-1.8A
Qgd Gate Drain Charge 1.84 nC
tD(on) Turn-On DelayTime 10.5 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=5.6Ω, 11.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 54.5 ns
tf Turn-Off Fall Time 24.7 ns
trr Body Diode Reverse Recovery Time IF=-1.8A, dI/dt=100A/µs 24.7 ns
Qrr Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/µs 8.2 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev3: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO7411

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 6
-4.5V
-3.0V VDS=-5V
-2.5V 5
-8V
25°C
10 4
125°C
-2.0V
-ID (A)

-ID(A)
3

5 2
VGS=-1.5V
1

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

225 1.6

VGS=-2.5V
200 ID=-1.8A
Normalized On-Resistance

VGS=-1.8V
1.4
175 VGS=-1.8V
RDS(ON) (mΩ)

VGS=-4.5V
150 1.2
VGS=-2.5V

125
VGS=-4.5V 1
100

75 0.8
0 2 4 6 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

225 1E+01

200 1E+00
125°
ID=-1.8A
175 1E-01
RDS(ON) (mΩ)

25°C
-IS (A)

150 1E-02
125°C
125 1E-03

100 1E-04
25°C

75 1E-05
1 2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO7411

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 800

VDS=-10V
4 ID=-1.8A Ciss
600

Capacitance (pF)
-VGS (Volts)

3
400
2
Crss
200
1
Coss

0 0
0 2 4 6 8 0 5 10 15 20
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
12
TJ(Max)=150°C TJ(Max)=150°C
TA=25°C 100µs 10 TA=25°C

10.0 8
-ID (Amps)

Power (W)

10µs
RDS(ON) 1ms 6
limited
10ms
1.0 4
0.1s
1s 2
10s DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
In descending order
D=Ton/T D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

RθJA=200°C/W
1

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 θ NOTE
1.ALL DIMENSIONS ARE IN MILLMETERS.
2.DIMENSIONS ARE INCLUSIVE OF PLATING.
3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH
AND GATE BURRS
4.DIE IS FACING UP FOR MOLD AND FACING
DOWN FOR TRIM/FORM .ie:REVERSE TRIM/FORM.
5. DIMENSION L IS MEASURED IN GAUGE PLANE
6. CONTROLLING DIMENSION IS MILLIMETER.
CONVERTED INCH DIMENSIONS ARE NOT
NECESSARILY EXACT.
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
SYMBOLS
MIN NOM MAX MIN NOM MAX
A −−− 1.10 −−− 0.043
A1 0.00 −−− 0.10 0.00 −−− 0.004
A2 0.7 0.9 1.00 0.028 0.035 0.039
b 0.15 −−− 0.30 0.006 −−− 0.012
c 0.08 −−− 0.22 0.003 −−− 0.009
D 1.85 2.10 2.15 0.073 0.083 0.085
E 1.80 2.30 2.40 0.071 0.091 0.094
e 0.65 BSC 0.026 BSC
RECOMMENDATION OF LAND PATTERN e1 1.30 BSC 0.051 BSC
E1 1.1 1.30 1.4 0.043 0.051 0.055
L 0.26 0.36 0.46 0.010 0.014 0.018
θ 0° 4° 8° 0° 4° 8°
UNIT: mm
 Document No. PD-00353

Version rev A
Title AO7411 Marking Description

SC-70(6L) PACKAGE MARKING DESCRIPTION

LT

LT
PNW PNW

Standard product Green product

NOTE:
P - Product number code
N - Assembly&Foundry location code
W - Year and Week code
LT - Assembly lot code.

PART NO. DESCRIPTION CODE (P&N)

AO7411 Standard product Y&N
AO7411L Green product Y&N

Rev. A
 SC-70 6L Tape and Reel Data

SC-70 6L Carrier Tape

SC-70 6L Reel

SC-70 6L Tape
Leader / Trailer
& Orientation