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Cmos Sessional 1

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25 views5 pages

Cmos Sessional 1

Uploaded by

Ashish Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Depletion Mode MOSFET:

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device


commonly used in electronic circuits, including digital integrated circuits (ICs) and analog
applications like amplifiers and filters. It helps amplify or switch voltages within circuits.

What Is Depletion Mode MOSFET?


Nmos
A depletion mode MOSFET is a type of MOSFET that normally turns ON without applying any gate
voltage. In other words, it’s an “always-on” device. Here are the key points about depletion mode
MOSFETs:

1. Current Flow Direction: The flow of current in a depletion mode MOSFET is from the drain
terminal to the source.

2. Normally ON: Unlike enhancement mode MOSFETs (which require a gate voltage to turn
ON), depletion mode MOSFETs are activated by default. No gate voltage is needed for them
to conduct.

3. Gate Voltage Contro : When a negative voltage is applied to the gate terminal, the channel between
the drain and source becomes more resistive. As the gate-source voltage increases, the
current flow from drain to source decreases until it eventually stops.

Working

a MOS transistor possesses a conducting channel inherently present between its source and drain
terminals due to dopants in the channel region. The conductivity of this channel is influenced by the
gate voltage: positive voltages widens the channel, increasing conductivity, while negative voltages
narrows it, decreasing conductivity. Consequently, a negative gate voltage restricts current flow,
whereas a positive voltage encourages it. Ultimately, as the negative gate voltage intensifies, it can
deplete the channel entirely, leading to pinch-off and the cessation of drain current.
CV characteristics of MOS devices

Which consists of VS = 0, VD = 0 and V B = 0 and a bias is applied to the gate terminal. Depending
upon the gate bias there are different regions of operation in C-V curve that are accumulation,
depletion and strong inversion. We will discuss each region of operation in details in this section.

1. Accumulation Region :

In this region of operation the gate to source bias is negative because of this the holes from the
substrate are attracted under the gate region.

There are three types of capacitances are involved that are capacitance between gate electrode and
substrate (Cgb), capacitance between gate and drain terminals (Cgd) and capacitance between gate
and source terminals (Cgs).

2. Depletion Region :

Consider the case that VGS is positive but less than V TH for some terminal biases shown in Figure
below. Under these conditions the surface under the gate is depleted because as the holes under
the gate are displaced and leave negative immobile ions that contribute to negative charge.

In this region of operation the capacitance between the gate and the source/drain is simply overlap
capacitance while the capacitance between the gate and substrate is the oxide capacitance in series
with depletion capacitance of the formed of depletion region. The MOSFET operated in this region is
said to be in weak inversion or the sub threshold region.

3. Strong Inversion Region :

When VGS is sufficiently positive and is larger than V TH then a large number of electrons are attracted
under the age and the surface is said to be inverted. MOSFET makes a very good capacitor when
VGS > VTH + few hundred mV. In integrated circuits the capacitor based on MOSFETs are designed in
this region of operation.
Differentiate between pmos and nmos technology in tabular form

off
Design nand gate using cmos technology

TRUTH TABLE

CIRCUIT

Case-1: Both input voltages are low, resulting in both pMOS transistors being ON and both nMOS
transistors being OFF, allowing Vout to charge to Vdd, maintaining a high level.

Case-2: VA is low and VB is high, enabling a path to Vdd through the ON pMOS transistor despite one
pMOS being OFF, while the series arrangement of OFF and ON nMOS transistors prevents discharge,
resulting in a high Vout.

Case-3: VA is high and VB is low, functioning similarly to Case-2 due to the complementary nature of
MOSFET pairs, resulting in a high Vout.

Case-4: Both input voltages are high, causing both pMOS transistors to be OFF and both nMOS
transistors to be ON, establishing a path to ground and discharging Vout to a low level.

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