AOTF600A70FL/AOT600A70FL

700V, a MOS5 TM N-Channel Power Transistor

General Description Product Summary

• Proprietary aMOS5TM technology VDS @ Tj,max 800V

• Low RDS(ON) IDM 34A
• Optimized switching parameters for better EMI RDS(ON),max < 0.6Ω
performance
Qg,typ 14.5nC
• Enhanced body diode for robustness and fast reverse
recovery Eoss @ 400V 1.9mJ

Applications 100% UIS Tested

100% Rg Tested
• Flyback for SMPS
• Charger ,PD Adapter, TV, lighting.

TO-220 D
TO-220F

S S G
D D
G G
AOTF600A70FL AOT600A70FL S

Orderable Part Number Package Type Form Minimum Order Quantity

AOTF600A70FL TO220F Green Tube 1000
AOT600A70FL TO220 Green Tube 1000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT600A70FL AOTF600A70FL Units
Drain-Source Voltage VDS 700 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 8.5 8.5*
ID
Current TC=100°C 5 5* A
C
Pulsed Drain Current IDM 34
Avalanche Current C L=1mH IAR 2.1 A
Repetitive avalanche energy C EAR 2.2 mJ
Single pulsed avalanche energy G EAS 19 mJ
MOSFET dv/dt ruggedness 100
dv/dt V/ns
Peak diode recovery dv/dt 20
TC=25°C 104 26 W
PD
Power Dissipation B Derate above 25°C 0.8 0.2 W/°C
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol AOT600A70FL AOTF600A70FL Units
Maximum Junction-to-Ambient A,D RqJA 65 65 °C/W
Maximum Case-to-sink A RqCS 0.5 --- °C/W
Maximum Junction-to-Case RqJC 1.2 4.7 °C/W
* Drain current limited by maximum junction temperature.

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This datasheet has been downloaded from http://www.digchip.com at this page

 AOTF600A70FL/AOT600A70FL

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250μA, VGS=0V, TJ=25°C 700
BVDSS Drain-Source Breakdown Voltage V
ID=250μA, VGS=0V, TJ=150°C 800
BVDSS Breakdown Voltage Temperature
ID=250μA, VGS=0V 0.62 o
V/ C
/∆TJ Coefficient
VDS=700V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
VDS=560V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=5V, ID=250mA 4 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A 0.53 0.6 Ω
gFS Forward Transconductance VDS=10V, ID=4A 6.3 S
VSD Diode Forward Voltage IS=4A,VGS=0V 0.86 1.2 V
IS Maximum Body-Diode Continuous Current 8.5 A
ISM Maximum Body-Diode Pulsed Current C 34 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 900 pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance 23 pF
Effective output capacitance, energy
Co(er) H 22 pF
related
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) I 100 pF
related
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 1.4 pF
Rg Gate resistance f=1MHz 2 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 14.5 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=4A 5.5 nC
Qgd Gate Drain Charge 2.6 nC
Td(on) Turn-On DelayTime 20 ns
Tr Turn-On Rise Time VGS=10V, VDS=400V, ID=4A, 8 ns
Td(off) Turn-Off DelayTime RG=5W 33 ns
Tf Turn-Off Fall Time 8 ns
Trr Body Diode Reverse Recovery Time 260 ns
Irm Peak Reverse Recovery Current IF=4A, dI/dt=100A/ms, VDS=400V 20 A
Qrr Body Diode Reverse Recovery Charge 3.5 mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=0.8A, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V (BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% V (BR)DSS.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOTF600A70FL/AOT600A70FL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 100

10V VDS=10V -55°C

12 8V
7V
10
9

ID (A)
ID (A)

6.5V 125°C
6
1
6V 25°C
3
VGS=5.5V
0 0.1
0 5 10 15 20 2 4 6 8 10
VDS (Volts) VGS (Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

1 3

2.5 VGS=10V

Normalized On-Resistance
0.8 ID=2.5A
VGS=10V
2
RDS(ON) (W)

0.6
1.5
0.4
1

0.2
0.5

0 0
0 2 4 6 8 -100 -50 0 50 100 150 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.3 1E+02

1.2 1E+01
BVDSS (Normalized)

1.1 1E+00
125°C
IS (A)

1 1E-01

0.9 1E-02 25°C

0.8 1E-03

0.7 1E-04
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C) VSD (Volts)
Figure 5: Break Down vs. Junction Temparature Figure 6: Body-Diode Characteristics

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 AOTF600A70FL/AOT600A70FL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

12 10000
VDS=400V
ID=4A Ciss
9 1000

Capacitance (pF)
VGS (Volts)

100
6
Coss
10
3

1
Crss
0
0 3 6 9 12 15 0
0 100 200 300 400 500 600
Qg (nC)
Figure 7: Gate-Charge Characteristics VDS (Volts)
Figure 8: Capacitance Characteristics

3 10

2.5
Current rating ID (A) 8

2
6
Eoss (uJ)

1.5 Eoss

4
1

2
0.5

0 0
0 100 200 300 400 500 0 25 50 75 100 125 150
VDS (Volts) TCASE (°C)
Figure 9: Coss stored Energy Figure 10: Current De-rating (Note F)

100 100

10ms
RDS(ON) 10 RDS(ON)
10 10ms limited
limited
100ms
ID (Amps)

100ms
ID (Amps)

1 1
1ms
1ms
DC
DC 10ms 10ms
0.1 0.1 TJ(Max)=150°C
TJ(Max)=150°C 0.1s
TC=25°C 1s TC=25°C

0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) Packag
VDS (Volts)
Figure 11: Maximum Forward Biased Safe Operating Figure 12: Maximum Forward Biased Safe Operating TO220F
Area for AOTF600A70FL(Note F) Area for AOT600A70FL(Note F)

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 AOTF600A70FL/AOT600A70FL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

RqJC=4.7°C/W
Thermal Resistance

0.1
PDM

0.01 Single Pulse Ton

T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF600A70FL(Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

RqJC=1.2°C/W
Thermal Resistance

0.1
PDM

0.01 Single Pulse Ton

T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOT600A70FL(Note F)

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 AOTF600A70FL/AOT600A70FL

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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