AOTF190A60CL/AOT190A60CL/AOB190A60CL

600V, a MOS5
TM
N-Channel Power Transistor

General Description Product Summary

• Proprietary aMOS5TM technology VDS @ Tj,max 700V

• Low RDS(ON) IDM 80A
• Optimized switching parameters for better EMI RDS(ON),max < 0.19Ω
performance
Qg,typ 34nC
• Enhanced body diode for robustness and fast reverse
recovery Eoss @ 400V 4.3mJ

Applications 100% UIS Tested

100% Rg Tested
• SMPS with PFC,Flyback and LLC topologies
• Silver ATX,adapter,TV,lighting,Telecom

Top View TO-263

TO-220 TO-220F D
D2PAK
D

S S
D G
S G G
D
G S
AOT190A60CL AOTF190A60CL AOB190A60CL

Orderable Part Number Package Type Form Minimum Order Quantity

AOTF190A60CL TO-220F Green Tube 1000
AOT190A60CL TO220 Green Tube 1000
AOB190A60CL TO263 Green Tape&Reel 800

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT(B)190A60CL AOTF190A60CL Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±20 V
Gate-Source Voltage (dynamic) AC( f>1Hz) VGS ±30 V
Continuous Drain TC=25°C 20 20*
ID
Current TC=100°C 12 12* A
Pulsed Drain Current C IDM 80
Avalanche Current C IAR 5 A
Repetitive avalanche energy C EAR 12.5 mJ
Single pulsed avalanche energy G EAS 410 mJ
MOSFET dv/dt ruggedness 100
dv/dt V/ns
Peak diode recovery dv/dt 20
TC=25°C 208 32 W
PD
Power Dissipation B Derate above 25°C 1.7 0.25 W/°C
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol AOT(B)190A60CL AOTF190A60CL Units
Maximum Junction-to-Ambient A,D RqJA 65 65 °C/W
Maximum Case-to-sink A RqCS 0.5 -- °C/W
Maximum Junction-to-Case RqJC 0.6 3.9 °C/W
* Drain current limited by maximum junction temperature.

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 AOTF190A60CL/AOT190A60CL/AOB190A60CL

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250μA, VGS=0V, TJ=25°C 600
BVDSS Drain-Source Breakdown Voltage V
ID=250μA, VGS=0V, TJ=150°C 700
BVDSS Breakdown Voltage Temperature
ID=250μA, VGS=0V 0.59 o
V/ C
/∆TJ Coefficient
VDS=600V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
VDS=480V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=5V, ID=250mA 3.2 4 4.6 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7.6A 0.17 0.19 Ω
gFS Forward Transconductance VDS=10V, ID=10A 16 S
VSD Diode Forward Voltage IS=10A,VGS=0V 0.85 1.2 V
IS Maximum Body-Diode Continuous Current 20 A
ISM Maximum Body-Diode Pulsed Current C 80 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1935 pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance 55 pF
Effective output capacitance, energy
Co(er) H 49 pF
related
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) I 213 pF
related
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 1.25 pF
Rg Gate resistance f=1MHz 5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 34 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=10A 15 nC
Qgd Gate Drain Charge 8.5 nC
tD(on) Turn-On DelayTime 80 ns
tr Turn-On Rise Time VGS=10V, VDS=400V, ID=10A, 70 ns
tD(off) Turn-Off DelayTime RG=25W 80 ns
tf Turn-Off Fall Time 20 ns
trr Body Diode Reverse Recovery Time 341 ns
Irm Peak Reverse Recovery Current IF=10A, dI/dt=100A/ms, VDS=400V 28 A
Qrr Body Diode Reverse Recovery Charge 6.8 mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. This is the absoluted maximum rating. Parts are 100% tested at TJ=25°C, L=60mH, IAS=2.7A, VDD=150V, RG=25Ω.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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 AOTF190A60CL/AOT190A60CL/AOB190A60CL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 100

9V VDS=10V
40
10V
10
30 8.5V -55°C

ID (A)
ID (A)

125°C
20 8V
1

10 7.5V 25°C

VGS=7V
0 0.1
0 4 8 12 16 20 0 3 6 9 12 15
VDS (Volts) VGS (Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

0.35 3

0.3 2.5

0.25 Normalized On-Resistance 2 VGS=10V

RDS(ON) (W)

VGS=10V ID=7.6A
0.2 1.5

0.15 1

0.1 0.5

0.05 0
0 5 10 15 20 25 -100 -50 0 50 100 150 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.3 1E+02

1.2 1E+01
BVDSS (Normalized)

1.1 1E+00
125°C
IS (A)

1 1E-01

25°C
0.9 1E-02

0.8 1E-03

0.7 1E-04
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0
TJ (°C) VSD (Volts)
Figure 5: Break Down vs. Junction Temparature Figure 6: Body-Diode Characteristics

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 AOTF190A60CL/AOT190A60CL/AOB190A60CL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000
VDS=480V
ID=10A
12 1000 Ciss

Capacitance (pF)
VGS (Volts)

9 100

Coss
6 10

3 1 Crss

0 0
0 10 20 30 40 50 0 100 200 300 400 500 600
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

10 25

8 20
Current rating ID (A)

6 15
Eoss (uJ)

Eoss
4 10

2 5

0 0
0 100 200 300 400 500 600 0 25 50 75 100 125 150
VDS (Volts) TCASE (°C)
Figure 9: Coss stored Energy Figure 10: Current De-rating (Note F)

1000 1000

100 100
RDS(ON) 10ms RDS(ON) 10ms
limited limited
10 10
ID (Amps)

ID (Amps)

100ms
100ms

1 1ms 1 1ms
10ms DC 10ms
DC
0.1s
0.1 0.1
TJ(Max)=150°C 1s TJ(Max)=150°C
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 11: Maximum Forward Biased Safe Operating Figure 12: Maximum Forward Biased Safe Operating
Area for AOTF190A60CL (Note F) Area for AOT(B)190A60CL (Note F)

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 AOTF190A60CL/AOT190A60CL/AOB190A60CL

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

RqJC=3.9°C/W
Thermal Resistance

0.1
PDM

0.01 Single Pulse Ton

T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF190A60CL (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

RqJC=0.6°C/W
Thermal Resistance

0.1
PDM

0.01 Ton
Single Pulse
T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)190A60CL (Note F)

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 AOTF190A60CL/AOT190A60CL/AOB190A60CL

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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