IRF630B/IRFS630B

IRF630B/IRFS630B
200V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC)
planar, DMOS technology. • Low Crss ( typical 22 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.

G
TO-220 TO-220F
G DS GD S
IRF Series IRFS Series
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter IRF630B IRFS630B Units

VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C) 9.0 9.0 * A
- Continuous (TC = 100°C) 5.7 5.7 * A
IDM Drain Current - Pulsed (Note 1) 36 36 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) 9.0 A
EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C) 72 38 W
- Derate above 25°C 0.57 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter IRF630B IRFS630B Units
RθJC Thermal Resistance, Junction-to-Case Max. 1.74 3.33 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.2 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 200 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 160 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 4.5 A -- 0.34 0.4 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) -- 7.05 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 550 720 pF
Coss Output Capacitance f = 1.0 MHz -- 85 110 pF
Crss Reverse Transfer Capacitance -- 22 29 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 11 30 ns
VDD = 100 V, ID = 9.0 A,
tr Turn-On Rise Time -- 70 150 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 60 130 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 65 140 ns
Qg Total Gate Charge VDS = 160 V, ID = 9.0 A, -- 22 29 nC
Qgs Gate-Source Charge VGS = 10 V -- 3.6 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 10.2 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 9.0 A, -- 140 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4)
-- 0.87 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
1 7.0 V 1
10 6.5 V 10
6.0 V
5.5 V
Bottom : 5.0 V

ID, Drain Current [A]

ID, Drain Current [A]

o
150 C
0 0
10 10 o
25 C

o
※ Notes : -55 C ※ Notes :
1. 250μ s Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250μ s Pulse Test

-1 -1
10 10
-1 0 1 2 4 6 8 10
10 10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2.5

2.0 1
10
Drain-Source On-Resistance

VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],

1.5

VGS = 20V

1.0 10
0

150℃ 25℃
0.5 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test

0.0 10
-1

0 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

1500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 40V
10
VDS = 100V
VDS = 160V
VGS, Gate-Source Voltage [V]

1000 8
Capacitance [pF]

Ciss
6
Coss

500 4

Crss ※ Notes :
1. VGS = 0 V
2. f = 1 MHz 2
※ Note : ID = 9.0 A

0 0
10
-1
10
0
10
1 0 4 8 12 16 20 24

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 4.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2
2 10 Operation in This Area
10 Operation in This Area is Limited by R DS(on)
is Limited by R DS(on)

100 µs
1 1 ms
100 µs 10
ID, Drain Current [A]
ID, Drain Current [A]

10 ms
1
10 1 ms 100 ms
10 ms DC
0
10
DC

0
10
※ Notes : 10
-1 ※ Notes :
o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-1 -2
10 10
0 1 2 0 1 2
10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for IRF630B for IRFS630B

10

8
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Typical Characteristics (Continued)

(t), T h e rm a l R e s p o n s e 0
10 D = 0 .5

※ N o te s :
0 .2 1 . Z θ J C (t) = 1 .7 4 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z θ J C (t)

-1
0 .0 5
10
0 .0 2 PDM
θ JC

0 .0 1 t1
s in g le p u ls e
Z

t2

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for IRF630B

(t), T h e r m a l R e s p o n s e

D = 0 .5
0
10
0 .2 ※ N o te s :
1 . Z θ J C (t) = 3 .3 3 ℃ /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)

0 .0 5
-1
10 0 .0 2
PDM
0 .0 1
θ JC

t1
Z

t2
s in g le p u ls e

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for IRFS630B

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Package Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 IRF630B/IRFS630B
Package Dimensions (Continued)

3.30 ±0.10
TO-220F
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20
(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B, December 2002

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™
ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1

Product Folder - Fairchild P/N IRF630B - 200V N-Channel B-FET / Substitute of IRF630 & IRF630A Page 1 of 2

Careers | Sitema

Go

DATASHEETS, SAMPLES, BUY TECHNICAL INFORMATION APPLICATIONS DESIGN CENTER SUPPORT COMPANY INVESTORS MY FA

Home >> Find products >>

Related Links
IRF630B
200V N-Channel B-FET / Substitute of IRF630 & IRF630A
Request samples

Contents How to order products

•General description •Qualification Support
•Features Product Change Notices
Datasheet (PCNs)
•Product status/pricing/packaging Download this
•Order Samples datasheet Support

Sales support
General description
Quality and reliability
These N-Channel enhancement mode power field effect transistors are
produced using Fairchild’s proprietary, planar, DMOS technology. e-mail this datasheet
Design center

This advanced technology has been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode. These devices are This page
well suited for high efficiency switching DC/DC converters, switch mode Print version
power supplies, DC-AC converters for uninterrupted power supply and
motor control.

back to top

Features

z 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10V

z Low gate charge (typical 22 nC)
z Low Crss (typical 15 pF)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability

back to top
Product status/pricing/packaging

mhtml:file://C:\TEMP\IRF630B_FP001.mht 17-Aug-2007
Product Folder - Fairchild P/N IRF630B - 200V N-Channel B-FET / Substitute of IRF630 & IRF630A Page 2 of 2

Product Product status Pb-free Status Package type Leads Packing method Package Marking Convention**
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
IRF630BTSTU_FP001 Not recommended for new designs TO-220 3 RAIL
&4 (4-Digit Date Code)
Line 2: IRF Line 3: 630B
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
IRF630B_FP001 Not recommended for new designs TO-220 3 RAIL
&4 (4-Digit Date Code)
Line 2: IRF Line 3: 630B

Indicates product with Pb-free second-level interconnect. For more information click here.

Package marking information for product IRF630B is available. Click here for more information .

back to top

Qualification Support

Click on a product for detailed qualification data

Product
IRF630BTSTU_FP001
IRF630B_FP001

back to top

© 2007 Fairchild Semiconductor

Products | Design Center | Support | Company News | Investors | My Fairchild | Contact Us | Site Index | Privacy Policy | Site Terms & Conditions | Standard Terms & Conditions o

mhtml:file://C:\TEMP\IRF630B_FP001.mht 17-Aug-2007