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Analysis of Mathematical Modeling of PV Module

with MPPT Algorithm
B.Chitti Babu, Member, Suresh Gurjar Zbigniew M. Leonowicz, Luigi Piegari
IEEE Department of Electrical Senior Member, IEEE Senior Member, IEEE
Tomas Cermak, Member, Engineering, National Faculty of Electrical Department of Electronics,
IEEE Institute of Technology Engineering, Wroclaw Information and
Centrum ENET, VSB- Rourkela, University of Technology, Bioengineering,
Technical University of India Poland Politecnico di Milano,
Ostrava, Czech Republic sureshgjr91@gmail.com leonowicz@ieee.org Italy
dr.chittibabub.b@ieee.org, luigi.piegari@polimi.it
tomas.cermak@vsb.cz

Abstract—This paper presents the mathematical modeling of available literature for better understanding of their
photovoltaic (PV) module with the effective comparison of two performances. Moreover, it is necessary to model it to study
popular maximum power point tracking (MPPT) techniques the dynamic performance of PV system in the study of MPP
namely. Generally, Maximum Power Point Tracking (MPPT) tracking (MPPT) algorithms and to simulate the PV system
techniques are used in PV System to extract maximum possible and its components [3]-[4]. Now a days high efficiency power
power which in turn depends on solar irradiance and
conditioner based on power converters are most widely
temperature of PV module. Two most widely used MPPT
techniques namely incremental conductance (INC), and perturb employed to reduce the overall cost since PV modules still
& observe (P&O) method are analyzed in this paper. The PV have relatively low conversion efficiency during low
models compared are simplified single diode model, improved two irradiation levels, In addition, power converters are designed to
diode model and simplified two-diode model. The effectiveness of extract the maximum possible power from the PV module [5]
the comparison has been done through MATLAB/Simulink though Maximum Power Point Tracking (MPPT) algarithm.
Environment and the results are analyzed. In this context, this paper presents the mathematical
modeling of photovoltaic (PV) module with the effective
Index Terms—maximum power point tracking (MPPT) comparison of two popular maximum power point tracking
photovoltaic (PV) module, single-diode model, improved two- (MPPT) techniques namely. Generally, Maximum Power Point
diode model, simplified-two diode model, modeling & simulation
Tracking (MPPT) techniques are used in PV System to extract
maximum possible power which in turn depends on solar
I. INTRODUCTION
irradiance and temperature of PV module. Two most widely
As the people are more concern about fossil fuel exhaustion used MPPT techniques namely incremental conductance
and the environmental problems such as CO2 emissions and (INC), and perturb & observe (P&O) method are analyzed in
global warming caused by the fuel fired power generation. As this paper. The PV models compared are simplified single
a result, renewable energy sources such as solar, wind, biomass diode model, improved two diode model and simplified two-
etc., are playing pivotal role in cleaner power production. diode model. The effectiveness of the comparison has been
Nowadays, photovoltaic (PV) system, which makes possible done through MATLAB/Simulink Environment and the results
electricity generation from solar energy, and can be used for are analyzed.
both grid-connected and stand-alone applications. And also
these are widely used for remore areas where electricity is not II. MATHEMATICAL MODELING OF PV MODULE
easily accesible [1]. Moreover, PV system is rapidly growing A solar cell is basically a P-N junction fabricated in a thin
in the current market owing to cost effective power production, wafer of semiconductor material such as Silicon or
fast technological progress, being maintenance and clean Germanium). When the solar cell is exposed to sunlight, due to
power production. However, the efficiency of energy electron-hole pair recombination, electricity is generated when
conversion largely depends on the efficiency of the PV system the photon energy exceeds band-gab energy of semiconductor
that generates the power. In exacting, atmospheric conditions corresponding to the incident irradiation [6]. This effect is
highly influences the efficiency, which depends nonlinearly on called photovoltaic effect. Generally, PV module composed of
the irradiation level and solar temperature and also these series and parallel combination of solar cells to provide
factors affect the output I-V and P-V characteristics of a PV demanded power range. Usually, the output current of PV
module [2]. module depends on photo current (Ipv) and exponential function
Generally the mathematical modeling and simulation of of diode saturation current (Io) and it can be expressed as
many individual components of PV system are presented in follows.

PREPRINT
 β ΔT *q
( )

⎡ ⎛ q(V + IRs ) ⎞ ⎤ e N s KTA

G [I +αΔT ] (4)
⎟ − 1⎥ − (V + IRs ) / (Rsh ) Io = sc
I = Ipv − Io⎢exp⎜ To
β Δ T *q

⎣ ⎝ NsKTA ⎠ ⎦
( )

(GI / I rs + 1 )
N s KTA
(1) sc
T − e
where,
q= Electron charge (1.6x10-19 Coulombs) The unknown parameter “A” can be obtained by solving the
K=Boltzmann constant (1.38x10-23 Nm/K) equation for MPP(Vm and Im)
T=PV Module temperature in Kelvin
I0=Reverse saturation current of diode qV qV
A=Diode ideality constant of diode Im
m
⎛ I − Im ⎞ N s KToco A
Ipv=Light generated current of PV cell in Ampere =e N s KT o A
− ⎜⎜ sc ⎟⎟ e (5)
Rs=Series Resistance of PV cell I sc ⎝ I sc ⎠
Rsh=Shunt Resistance of PV cell
Ns=Number of PV module connected in series From the above equation the PV Array can be modeled as a
I=Output current of PV cell in Ampere Ideal Single Diode Model (ISDM)

This section describes different mathematical models of PV B. Improved Two-Diode Model

module with mathematical expressions. This model consist of a PV current source, two ideal diode
in parallel, series resistance Rs and shunt resistance Rsh [8]. The
A. Ideal Single-Diode Model
equivalent circuit is as shown in Fig.2.
In this model PV module is modeled as a current source and
a diode in parallel as shown in Fig. 1 with negligible series and
shunt resistances [7]. With reference to Fig.1 the I-V equation
(1) becomes
Id1 Id 2
⎡ ⎛ q (V + IRs ) ⎞ ⎤
I = Ipv − Io ⎢exp⎜ ⎟ − 1⎥ (2)
Ipv
⎣ ⎝ NsKTA ⎠ ⎦

I0 Fig. 2 Improved Two Diode Model

I pv
Equation (1) describes the output current of the cell:
V + IRS
I = Ipv − Id 1 − Id 2 − ( ) (6)
Rsh
Where
Fig. 1 Ideal Single Diode Model (ISDM) ⎡ V + IRS ⎤
Id 1 = I 01⎢exp( ) − 1⎥ (7)
⎣ a1VT 1 ⎦
Usually, this Model has three unknown parameters (IPV, Io
and
and A). Ipv is determined from the manufacturer datasheet as
follows: ⎡ V + IR S ⎤
I d 2 = I 02 ⎢ exp( ) − 1⎥ (8)
⎣ a 2V T 2 ⎦
I pv = G (I sc + α Δ T ) (3)
Where I01 and I02 are the reverse saturation currents of diode
2
Where G is irradiance (kW/m ), Isc is short circuit current at 1 and diode 2, VT 1 and VT 2 are the thermal voltages of
STC (Standard Temperature Condition) , ∆Tis the temperature respective diodes a1 and a2 represent the diode ideality
difference between the module temperature and the STC
temperature and α is the current temperature coefficient given constants of diode 1and diode 2. I02 Term in (8), compensate
in the datasheet the recombination loss in the depletion region as described in
[5].
Io, Saturation Current can be expressed as follows:
The Power obtained from PV Array can be obtained by
multiplying Voltage (V) with Current (I, Eq(6)).
To simplify, a1 and a2 are assumed to be equal to 1 and 2 Here, unknown parameter to be found are I pv , I01 , I02 , A1
respectively. The values are approximation of the Shockley
Read-Hall recombination in the space charge layer in and A2 respectively. I02 can be found in terms of I01 . So the
photodiode. remaining four unknown parameters namely; I pv , I01 , A1
The equation for PV current as a function of temperature
and irradiance can be written as: and A2 are to be estimated. They all are determined based on
the manufacturer datasheet as explained below.
G
Ipv = (I pv _ STC + KIΔT )
The PV current (Ipv) can be expressed in terms of short
(9) circuit current (Isc) at STC as equation (13), taking variation of
GSTC
temperature and irradiation into consideration. Ipv has a linear
For simplicity I01 is assumed to be equal to I02 , the simplified relationship with irradiation (G) and short circuit current (Isc)
equation for saturation current are as follow [10] and it can be given as follows:
(Isc _ STC + KIΔT ) I pv = (I sc + K I ΔT )G (13)
I 01 = I 02 = (10)
exp[(Voc + KVΔT ) / VT ] − 1 Where I sc (in Amps) is short circuit current at STC , ΔT is
the temperature difference between module temperature (T)
Vmp (Vmp + I m Rs) and the STC temperature, K I is short circuit current
Rp = (11)
[Vmp{I pv − I d 1 − I d 2 } − Pmax, E ] coefficient provided in datasheet. G is the surface irradiation in
kW/m2.
The values of Rp and Rs are obtained through iteration this is A simple equation to describe saturation current is given by
done by maximum power ( Pmp ) matching algorithm; i.e. by I 01 =
(I
+ K I ΔT ) sc
(14)
iteratively increasing the value of Rs and simultaneously exp[(Voc + KV ΔT ) * q /( N s KTA1 ) ] − 1
calculating Rp from equation (11) till calculated peak power In general it is found that magnitude of I02 is three to four
and experimental maximum power ( Pmp ) matches.
times larger than I01 [6] and it can be expressed in terms of
C. Simplified Two-Diode Model temperature of PV module [9] as
The simplified two diode model has a photo current source 2
in parallel with two ideal diodes without series and shunt T 5

resistances as shown in Fig. 3 [9]. As a result, it leads to lesser I 02 = ( ) I 01 (15)

computational time for simulation and also it needs only four
3.77
parameters estimation from data sheet in order to simulate this D. Finding values of A1 and A2
model. Significant reduction in simulation time proves to be an To estimate A1 and A2, a simple and fast iterative method is
advantageous while studying the mathematical modeling of PV used here. For that, the following two conditions are
module during STC and non-STC conditions. The detailed considered;
mathematical modeling is given as follows.
(a) At Open Circuit condition with Voc
(b) At Maximum point power condition with Vm and Im

During open circuit condition V=Voc and current is nearly

Id1 Id2 zero (i.e. I=Ioc=0; V=Voc). On simplification of equation (12)
at open circuit condition, A2 can be expressed in terms of A1
and it is revealed in (13).
Ipv Therefore
⎡ ⎛ q (Voc ) ⎞ ⎤ ⎡ ⎛ q (Voc ) ⎞ ⎤
0 = Ipv − I 01 ⎢exp⎜⎜ ⎟⎟ − 1⎥ − I 02 ⎢exp⎜⎜ ⎟⎟ − 1⎥
⎣ ⎝ NsKTA1 ⎠ ⎦ ⎣ ⎝ NsKTA2 ⎠ ⎦ (16)
Fig. 3 Simplified two-diode model of PV module
(qVoc )
A2 =
With reference to Fig. 3, I-V characteristic of the proposed I pv − I 01 (exp(qV /( N s KA1T )) − 1)
model can be expressed as follows: N s TK ln( + 1)
I 02
⎡ ⎛ q (V ) ⎞ ⎤ ⎡ ⎛ q (V ) ⎞ ⎤ (12) (17)
I = Ipv − I 01 ⎢exp ⎜⎜ ⎟⎟ − 1⎥ − I 02 ⎢exp ⎜⎜ ⎟⎟ − 1⎥
⎣ ⎝ NsKTA1 ⎠ ⎦ ⎣ ⎝ N sKTA2 ⎠ ⎦ The estimation of ideality constants A1 & A2 based on iterative
matching algorithm as proposed in [7].
 III. MPPT TECHNIQUES
A. Incremental Conductance (IC) Method
By measuring and comparing the incremental conductance
and instantaneous conductance of PV module, the variation of
the terminal voltage for PV module can be determined If the
value of incremental conductance is equal to that of
instantaneous conductance, then the corresponding maximum
power point is known. The advantage of the incremental
conductance method is that it can calculate and find the exact
perturbation direction for the operating voltage of PV modules.
In theory, when the maximum power point is found by the
judgment conditions (dI/dV = －I/V and dI= 0) of the
incremental conductance method, it can avoid the perturbation
phenomenon near the maximum power point [8]. The Flow
chart for Incremental Conductance method for determining
MPP is shown in Fig.4 [8].

Fig. 5 The flow diagram of P&O method

IV. SIMULATION AND RESULTS

This section discusses the comparative analysis of two
MPPT Algorithm on different models of PV module, The
proposed study is mathematically analyzed and simulated in
MATLAB/Simulink environment. The PV module considered
for the comparison is Kyocera KC200GT [10] and the
specifications of the KC200GT PV module are summarized in
Table-I.
TABLE-I:
PV MODULE SPECIFICATIONS

Parameter KC200GT at STC

Maximum Power(Pmax) 200 W(+10%/-5%)

Maximum Power Voltage(Vmp) 26.3 V

Maximum Power Current(Imp) 7.61 A

Fig. 4 The flow chart for incremental conductance method
Open Circuit Voltage(Voc) 32.9 V

B. Perturb & Observe (P&O) Method Short Circuit Current(Isc) 8.21 A

By means of iteratively perturbing, observing and Temperature Coefficient of Voc (KV) -1.23x10-1V/oC
comparing the power generated by the PV module, maximum
power point of PV module is determined. Due to its simplicity Temperature coefficient of Isc(KI) 3.18x10-3 A/oC
and lesser convergence for optimal MPP, this method is more
popular among all methods proposed in the available literature.
Number of cell per module(Ns) 54
The basic operating procedure of P&O method is shown in
Fig. 5 as flowchart. The advantages of the P&O method are
simple structure, easy implementation and less required To compare the performance of the two MPPT Algorithm
parameters. (IC and P&O) with the common fixed step size (0.1), the
simulation is configured under standard test conditions (STC)
to compare the performances. The irradiation was suddenly
changed from 1000 to 200 W/m2at 0.4s and changed back to
1000W/m2at 0.8s. A clear comparison can be made between IC
and P&O MPPT algorithm for Ideal Single Diode PV Model
from Fig. 6. It can be clearly seen that P&O MPPT gives more Comparative study of IC and P&O MPPT algorithm for Improved two Diode PV Model

ripple in the reference Voltage as compared to IC MPPT for

the same step size and same conditions. The Voltage ripple 26.4 P&O MPPT

Reference Voltage(Volts)
comparison can be made from Fig. 7. It should be noted that IC MPPT

Maximum Power Voltage or Reference Voltage given by 26.2

ISDM PV model by IC and P&O MPPT are 26.6 V and 26.7 V

respectively. 26

Comparative Study of IC and P&O MPPT algorithm for Ideal Single Diode PV Model
27 25.8

25.6
R e fe re n c e V o lta g e (V o lts)

26 P&O MPPT
I C MPPT 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Time(seconds)
25 Fig.8 Comparison between IC and P&O MPPT for Improved Two Diode PV
Model
Comparative study of IC and P&O MPPT algorithm for Improved two Diode PV Model
24
26.6
P&O MPPT
26.55 IC MPPT

R eference Voltage(Volts)
23
26.5

0.3 0.4 0.5 0.6 0.7 0.8 0.9 26.45

Time(In seconds)
Fig.6 Comparison between IC and P&O MPPT for ISDM Model 26.4

26.35

Comparative Study of IC and P&O MPPT algorithm for Ideal Single Diode PV Model 26.3

26.25
26.9 P&O MPPT
I C MPPT 0.28 0.3 0.32 0.34 0.36 0.38
Time(seconds)
R e fe ren c e V o ltag e (V o lts )

26.8 Fig.9 Comparison between Ripple Current

26.7
A. Comparative Analysis
26.6
The I-V characteristics of three modules with respect to
26.5 different PV Models STC conditions are illustrated in Fig.10.It
26.4
is seen that The I-V output curve for improved two diode
model [5] doesn’t guarantee accurate shape between the
26.3 maximum power point and the open-circuit voltage. It even
0.285 0.29 0.295 0.3 0.305 0.31 0.315 0.32 0.325 0.33 0.335 exhibits serious deficiencies when subjected to temperature
Time(In seconds)
Fig.7 Comparison between Ripple voltage
variations. Hence the graphs deviates completely from the
experimental results obtained. For ideal single diode model [6]
Fig 8. Shows comparative study of IC and P&O MPPT the model is significantly improved and is almost
Algorithm for Improved Two Diode Model .Here also P&O approximated to the actual PV module but, this approach
MPPT’s Refernce Voltage is more as compared to IC MPPT deteriorates accuracy at low irradiance, especially in the
for the same step size and same conditions. The Voltage vicinity of Voc. The simplified two-diode model takes
ripple comparison can be made from Fig. 9. It should be noted advantage of the simplicity of single diode model and
that Maximum Power Voltage or Reference Voltage given by enhances the accuracy by deriving a mathematical
Improved Two Diode Model by IC and P&O MPPT are 23.3V representation, capable of extracting accurate estimates of the
and 26.4V respectively. model parameters, directly related to manufacturer datasheets.
The characteristics curves closely coincide with the
experimental data sheet of PV module. As a result, simplified
two-diode model [7] takes lesser simulation time as compared
to improved two-diode model [5] and it was clearly shown in
Fig.11.
 ACKNOWLEDGEMENTS
8 KC200GT
This article has been elaborated in the framework of the
project New creative teams in priorities of scientific research ,
P V C u rre n t(A )

6 Proposed Model reg. no. CZ.1.07/2.3.00/30.0055, supported by Operational

Salem Model[7] Programme Education for Competitiveness and co-financed by
Yosef Model[8] the European Social Fund and the state budget of the Czech
4
Experimental Data Republic.
This work was partially supported by the NCN grant No.
2 DEC-2011/01/B/ST8/02515 (Poland).

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