Bta10 1

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® BTA/BTB10 Series
SNUBBERLESS™ & STANDARD 10A TRIACS
MAIN FEATURES: A2
Symbol Value Unit

G
IT(RMS) 10 A
A1
VDRM/VRRM 600 and 800 V

A2
IGT (Q1) 25 to 50 mA
DESCRIPTION
A1
Available either in standard or snubberless A2 A1
A2
G
version, the BTA/BTB10 triac series is suitable for G
general purpose AC switching. They can be used TO-220AB Insulated TO-220AB
(BTA10) (BTB10)
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits... or for phase control operation in
light dimmers, motor speed controllers, ...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current TO-220AB Tc = 105°C A

(full sine wave) 10
TO-220AB Ins. Tc = 95°C
ITSM Non repetitive surge peak on-state F = 60 Hz t = 16.7 ms 105 A
current (full cycle, Tj initial = 25°C)
F = 50 Hz t = 20 ms 100
I ²t I²t Value for fusing tp = 10 ms 55 A² s
Critical rate of rise of on-state current

dI/dt IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs
VDRM/VRRM
VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms Tj = 25°C V
voltage + 100
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg Storage junction temperature range - 40 to + 150

°C
Tj Operating junction temperature range - 40 to + 125
April 2002 - Ed: 5A 1/6
BTA/BTB10 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ (3 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB10
Unit
CW BW
IGT (1) I - II - III MAX. 35 50 mA
VD = 12 V RL = 33 Ω
VGT I - II - III MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V
IH (2) IT = 500 mA MAX. 35 50 mA
IL IG = 1.2 IGT I - III MAX. 50 70 mA
II 60 80
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs
(dI/dt)c (2) Without snubber Tj = 125°C MIN. 5.5 9.0 A/ms
■ STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB10
Unit
C B
IGT (1) I - II - III 25 50 mA

MAX.
VD = 12 V RL = 33 Ω IV 50 100
VGT ALL MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V
IH (2) IT = 500 mA MAX. 25 50 mA
IL IG = 1.2 IGT I - III - IV MAX. 40 50 mA
II 80 100
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C MIN. 200 400 V/µs
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms Tj = 125°C MIN. 5 10 V/µs
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
VTM (2) ITM = 14 A tp = 380 µs Tj = 25°C MAX. 1.55 V
Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V
Rd (2) Dynamic resistance Tj = 125°C MAX. 40 mΩ
IDRM VDRM = VRRM Tj = 25°C 5 µA
MAX.
IRRM Tj = 125°C 1 mA
Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1
2/6
BTA/BTB10 Series
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) TO-220AB 1.5 °C/W
TO-220AB Insulated 2.4
Rth(j-a) Junction to ambient TO-220AB °C/W
60
TO-220AB Insulated
PRODUCT SELECTOR
Voltage (xxx)
Part Number Sensitivity Type Package
600 V 800 V
BTA/BTB10-xxxB X X 50 mA Standard TO-220AB

BTA/BTB10-xxxBW X X 50 mA Snubberless TO-220AB
BTA/BTB10-xxxC X X 25 mA Standard TO-220AB
BTA/BTB10-xxxCW X X 35 mA Snubberless TO-220AB
BTB: Non insulated TO-220AB package
ORDERING INFORMATION
BT A 10 - 600 BW (RG)
TRIAC PACKING MODE
SERIES Blank: Bulk
SENSITIVITY & TYPE RG: Tube
INSULATION: B: 50mA STANDARD
A: insulated VOLTAGE: BW: 50mA SNUBBERLESS
B: non insulated 600: 600V C: 25mA STANDARD
800: 800V CW: 35mA SNUBBERLESS
CURRENT: 10A
OTHER INFORMATION
Base Packing
Part Number Marking Weight
quantity mode
BTA/BTB10-xxxyz BTA/BTB10xxxyz 2.3 g 250 Bulk

BTA/BTB10-xxxyzRG BTA/BTB10-xxxyz 2.3 g 50 Tube
Note: xxx = voltage, y = sensitivity, z = type
3/6
BTA/BTB10 Series
Fig. 1: Maximum power dissipation versus RMS Fig. 2: RMS on-state current versus case
on-state current (full cycle). temperature (full cycle).
P (W) IT(RMS) (A)

13 12
12 11 BTB
11 10
10 9
9 8
8 7
BTA
7 6
6
5 5
4 4
3 3
2 2
1 IT(RMS) (A) 1 Tc(°C)
0 0
0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125
Fig. 3: Relative variation of thermal impedance Fig. 4: On-state characteristics (maximum

versus pulse duration. values).
K=[Zth/Rth] ITM (A)

1E+0 100
Tj max. Tj max
Zth(j-c) Vto = 0.85 V
Rd = 40 mW
1E-1 Zth(j-a) 10
Tj=25°C
tp (s)
VTM (V)
1E-2 1
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus Fig. 6: Non-repetitive surge peak on-state
number of cycles. current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A) ITSM (A), I²t (A²s)

110 1000
Tj initial=25°C
100
90 t=20ms
dI/dt limitation:
80 Non repetitive One cycle 50A/µs ITSM
Tj initial=25°C
70
60
100
50 I²t
Repetitive
40 Tc=95°C
30
20 tp (ms)
10 Number of cycles
0 10
1 10 100 1000 0.01 0.10 1.00 10.00
4/6
BTA/BTB10 Series
Fig. 7: Relative variation of gate trigger current, Fig. 8: Relative variation of critical rate of decrease
holding current and latching current versus of main current versus (dV/dt)c (typical values).
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.5 2.0
1.8
2.0 C
IGT 1.6
B
1.5 1.4
IH & IL
1.2 BW/CW
1.0 1.0
0.8
0.5
Tj(°C) 0.6 (dV/dt)c (V/µs)
0.0 0.4
-40 -20 0 20 40 60 80 100 120 140 0.1 1.0 10.0 100.0
Fig. 9: Relative variation of critical rate of

decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

6
1
Tj (°C)
0
0 25 50 75 100 125
5/6
BTA/BTB10 Series
PACKAGE MECHANICAL DATA

TO-220AB (Plastic)
DIMENSIONS
B C
REF. Millimeters Inches
b2
Min. Typ. Max. Min. Typ. Max.
L
A 15.20 15.90 0.598 0.625
F
a1 3.75 0.147
I
a2 13.00 14.00 0.511 0.551
A
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
l4 b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
a1 c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
l3
l2
e 2.40 2.70 0.094 0.106
a2
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
b1 M
L 2.65 2.95 0.104 0.116
e
c1
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES

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SNUBBERLESS™ & STANDARD 10A TRIACS

Symbol Value Unit

VDRM/VRRM 600 and 800 V

Symbol Parameter Value Unit

IT(RMS) RMS on-state current TO-220AB Tc = 105°C A

I ²t I²t Value for fusing tp = 10 ms 55 A² s

Critical rate of rise of on-state current

IGM Peak gate current tp = 20 µs Tj = 125°C 4 A

PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg Storage junction temperature range - 40 to + 150

April 2002 - Ed: 5A 1/6

IGT (1) I - II - III 25 50 mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

BTA/BTB10-xxxB X X 50 mA Standard TO-220AB

BTB: Non insulated TO-220AB package

BTA/BTB10-xxxyz BTA/BTB10xxxyz 2.3 g 250 Bulk

Note: xxx = voltage, y = sensitivity, z = type

P (W) IT(RMS) (A)

Fig. 3: Relative variation of thermal impedance Fig. 4: On-state characteristics (maximum

K=[Zth/Rth] ITM (A)

ITSM (A) ITSM (A), I²t (A²s)

IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Fig. 9: Relative variation of critical rate of

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

PACKAGE MECHANICAL DATA

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

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