T810H

High temperature 8 A sensitive TRIACs

Features
A2
■ Medium current TRIAC
■ Logic level sensitive TRIAC
■ 150 °C max. Tj turn-off commutation G

■ Clip bounding A1

■ RoHS (2002/95/EC) compliant packages

A2

Applications A2

■ The T810H is designed for the control of AC

actuators in appliances and industrial systems.
G G
■ The multi-port drive of the microcontroller can A2
A2
control the multiple loads of such appliances A1 A1

and systems through these sensitive gate D2PAK TO-220AB

TRIACs. T810H-6G T810H-6T

Description
Specifically designed to operate at 150 °C, the
new 8 A T810H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost Table 1. Device summary
effectiveness when compared to electro-
Symbol Value Unit
mechanical solutions.
Based on ST logic level technology, they offer an IT(RMS) 8 A
IGT lower than 10 mA and specified minimal VDRM/VRRM 600 V
commutation and high noise immunity levels valid
IGT MAX 10 mA
up to the Tj max.

May 2009 Doc ID 15714 Rev 1 1/10

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Characteristics T810H

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

IT(RMS) On-state rms current (full sine wave) D2PAK, TO-220AB Tc = 135 °C 8 A

Non repetitive surge peak on-state F = 60 Hz t = 16.7 ms 84

ITSM A
current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 80
I²t I²t Value for fusing tp = 10 ms 42 A ²s
Critical rate of rise of on-state current
dI/dt F = 120 Hz Tj = 150 °C 50 A/µs
IG = 2 x IGT , tr ≤ 100 ns
Non repetitive surge peak off-state VDRM/VRRM
VDSM/VRSM tp = 10 ms Tj = 25 °C V
voltage + 100
IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gate power dissipation Tj = 150 °C 1 W
Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 150

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol Test conditions Quadrant Min Max. Unit

IGT I - II - III 1 10 mA
VD = 12 V RL = 33 Ω
VGT I - II - III 1.0 V
VGD VD = VDRM, RL = 3.3 kΩ I - II - III 0.15 V
(1)
IH IT = 100 mA 25 mA
I - III 30
IL IG = 1.2 IGT mA
II 35
dV/dt (1) VD = 67% VDRM, gate open, Tj = 150 °C 75 V/µs
Logic level, 0.1 V/µs, Tj = 150 °C 11.4
(dI/dt)c (1) A/ms
Logic level, 15 V/µs, Tj = 150 °C 3.0
1. For both polarities of A2 referenced to A1.

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T810H Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

VT (1) ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V

(1)
Vt0 Threshold voltage Tj = 150 °C MAX. 0.80 V
(1)
Rd Dynamic resistance Tj = 150 °C MAX. 55.0 mΩ
Tj = 25 °C MAX. 5 µA
VDRM = VRRM
IDRM Tj = 150 °C MAX. 3.1
IRRM VD/VR = 400 V (at peak mains voltage) Tj = 150 °C MAX. 2.5 mA
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C MAX. 2.0
1. for both polarities of A2 referenced to A1.

Table 5. Thermal resistance

Symbol Parameter Value Unit

Rth(j-c) Junction to case (AC) D2PAK / TO-220AB 1.60

S=1 cm2 D2PAK 45 °C/W
Rth(j-a) Junction to ambient
TO-220AB 60

Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle) temperature (full cycle)
P(W) IT(RMS)(A)
10 10
9 9
8 8
7 7
6 6
5 5

4 4

3 3

2 2

1 1 TC(°C)
IT(RMS)(A)
0 0
0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150

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Characteristics T810H

Figure 3. On-state rms current versus Figure 4. Relative variation of thermal

ambient temperature (free air impedance, versus pulse duration
convection, full cycle)
K=[Zth/Rth]
IT(RMS)(A)
3.0 1.E+00

2.5 Zth(j-c)

2.0 1.E-01

Zth(j-a)

1.5

1.0 1.E-02

0.5
Ta (°C)
tp(s)
0.0
1.E-03
0 25 50 75 100 125 150
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Figure 5. Relative variation of gate trigger Figure 6. Relative variation of holding and
current and voltage versus junction latching current versus junction
temperature (typical values) temperature (typical values)
IGT, VGT[T j] / IGT, VGT[T j=25 °C] IH, IL [T j] / IH, IL [T j=25 °C]
2.5 2.0
IGT Q3

2.0 IGT Q1- Q2

1.5 IH

1.5 IL
1.0
1.0 VGT Q1- Q2 -Q3

0.5
0.5
Tj(°C) Tj(°C)

0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Figure 7. Surge peak on-state current Figure 8. Non-repetitive surge peak on-state
versus number of cycles current and corresponding value
of I2t
ITSM(A) ITSM (A), I²t (A²s)
1000
80 Tj initial=25 °C

70 ITSM
t=20ms
dI/dt limitation: 50 A/µs
60 One cycle
Non repetitive 100
Tj initial=25 °C
50

40
I²t
30
10
20 Repetitive
TC=135 °C
10
Number of cycles Sinusoidal pulse width tp < 10 ms tP(ms)
0 1
1 10 100 1000 0.01 0.10 1.00 10.00

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T810H Characteristics

Figure 9. On-state characteristics (maximum Figure 10. Relative variation of critical rate of
values) decrease of main current versus
junction temperature
ITM (A) (dI/dt)C [T j] / (dI/dt)c [T j=150 °C]
100 15
Tj max 14
Vto = 0.80 V 13
Rd = 55 mΩ
12
11
10
9
8
10
7
Tj=150 °C
6
5
Tj=25 °C
4
3
2
T j(°C)
VTM (V) 1
1 0
0 1 2 3 4 5 25 50 75 100 125 150

Figure 11. Relative variation of critical rate of Figure 12. Relative variation of static dV/dt
decrease of main current versus immunity versus junction
reapplied dV/dt (typical values) temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c dV/dt [T j] / dV/dt [T j=150 °C]
4 15
14 VD=VR=400 V
13
12
3 11
10
9
8
2
7
6
5
1 4
3
2
(dV/dt)C (V/µs) 1 T j(°C)
0 0
0.1 1.0 10.0 100.0 25 50 75 100 125 150

Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal
junction temperature for different resistance versus repetitive peak
values of blocking voltage off-state voltage
IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=150°C; 600V] Rth(c-a) (°C/W)
1.0E+00 60
VDRM=VRRM=600 V 55 Rth(j-c)=1.6 °C/W
TJ=150 °C
50
1.0E-01 45
VDRM=VRRM=400 V
40
35
VDRM=VRRM=200 V
1.0E-02 30
25
20
1.0E-03 15
10
5 VAC PEAK(V)
T j(°C)
1.0E-04 0
25 50 75 100 125 150 200 300 400 500 600

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Ordering information scheme T810H

2 Ordering information scheme

Figure 15. Ordering information scheme

T 8 10 H - 6 y -TR

Triac series
Current
8=8A
Sensitivity
10 = 10 mA
High temperature
Voltage
6 = 600 V
Package
G = D2PAK
T = TO-220AB
Packing
Blank = Tube (D2PAK, TO-220AB)
-TR = Tape and reel (D2PAK)

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T810H Package information

3 Package information

● Epoxy meets UL94, V0

● Recommended torque 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Table 6. D2PAK dimensions

Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.30 4.60 0.169 0.181

A

E A1 2.49 2.69 0.098 0.106

C2
L2
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
L B2 1.25 1.40 0.048 0.055
L3 C 0.45 0.60 0.017 0.024
A1
C2 1.21 1.36 0.047 0.054
B2
C R
B D 8.95 9.35 0.352 0.368
G E 10.00 10.28 0.393 0.405

A2 G 4.88 5.28 0.192 0.208

2mm min.
FLAT ZONE L 15.00 15.85 0.590 0.624

V2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2 0° 8° 0° 8°

Figure 16. Footprint (dimensions in mm)

16.90

10.30 5.08

1.30

3.70
8.90

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Package information T810H

Table 7. TO-220AB dimensions

Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

B C a2 13.00 14.00 0.511 0.551

ØI b2
B 10.00 10.40 0.393 0.409
L
F b1 0.61 0.88 0.024 0.034

A b2 1.23 1.32 0.048 0.051

I4 C 4.40 4.60 0.173 0.181
l3

a1 c2 c1 0.49 0.70 0.019 0.027

l2 c2 2.40 2.72 0.094 0.107

a2
e 2.40 2.70 0.094 0.106
M F 6.20 6.60 0.244 0.259
b1 c1
e
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

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T810H Ordering information

4 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode

T810H-6G T810H 6G D2PAK 1.5 g 50 Tube

T810H-6G-TR T810H 6G D2 PAK 1.5 g 1000 Tape and reel
T810H-6T T810H 6T TO-220AB 2.3 g 50 Tube

5 Revision history

Table 9. Document revision history

Date Revision Changes

15-May-2009 1 First issue.

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 T810H

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