P0102MN

Sensitive 0.8 A SCR thyristor

Datasheet - production data

A
Description
Thanks to highly sensitive triggering levels, the
G 0.8 A P0102MN SCR thyristor is suitable for all
K applications where available gate current is
limited. This device offers a high blocking voltage
A
of 600 V, ideal for applications like interrupters
circuits.
G
A
K The surface mount SOT-223 package allows
SOT-223
compact, SMD based designs for automated
manufacturing.
Table 1: Device summary
Symbol Value Unit
Features
 IT(RMS) 0.8 A IT(RMS) 0.8 A
 125 °C max Tj VDRM/VRRM 600 V
 Low 0.2 mA gate current IGT 0.2 mA
 600 V VDRM/VRRM
Tj max. 125 °C
 ECOPACK®2 compliant component

Applications
 Proximity sensors
 Gate driver for large thyristors
 Overvoltage crowbar protection
 Ground fault circuit interrupters
 Arc fault circuit interrupter
 Standby mode power supplies
 Residual current detector

October 2017 DocID031113 Rev 1 1/8

This is information on a product in full production. www.st.com
Characteristics P0102MN

1 Characteristics
Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180 ° conduction angle) 0.8
Tamb = 70 °C A
IT(AV) Average on-state current (180 ° conduction angle) 0.5
Non repetitive surge peak on-state current tp = 8.3 ms 8
ITSM A
(Tj initial = 25 °C) tp = 10 ms 7
I2 t I2t value for fusing tp = 10 ms 0.24 A2s
Critical rate of rise of on-state current
dl/dt f = 60 Hz Tj = 125 °C 50 A/µs
IG = 2 x IGT, tr ≤ 100 ns
VDRM/VRRM Repetitive peak off-state voltage Tj = 125 °C 600 V
IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A
PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W
Tstg Storage junction temperature range -40 to +150 °C
Tj Operating junction temperature -40 to +125 °C

Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol Test conditions Value Unit
IGT Max. 200 µA
VD = 12 V, RL = 140 Ω
VGT Max. 0.8 V
VGD VD = VDRM, RL = 3.3 kΩ, RGK = 1000 Ω Tj = 125 °C Min. 0.1 V
VRG IRG = 10 µA Min. 8 V
IH IT = 50 mA, RGK = 1000 Ω Max. 5 mA
IL IG = 1 mA, RGK = 1000 Ω Max. 6 mA
dV/dt VD = 67 % VDRM, RGK = 1000 Ω Tj = 125 °C Min. 75 V/µs

Table 4: Static characteristics

Symbol Test conditions Value Unit
VTM ITM = 1.6 A, tp = 380 µs Tj = 25 °C Max. 1.95
V
VTO Threshold voltage Tj = 125 °C Max. 0.95
RD Dynamic resistance Tj = 125 °C Max. 600 mΩ
Tj = 25 °C 10
IDRM/IRRM VD = VDRM; VR = VRRM, RGK = 1000 Ω Max. µA
Tj = 125 °C 100

Table 5: Thermal parameters

Symbol Parameter Value Unit
Rth(j-t) Junction to tab (DC) 30
°C/W
Rth(j-a) Junction to ambient (DC) S(1) = 5 cm² 60

Notes:
(1)S = copper surface under tab.

2/8 DocID031113 Rev 1

P0102MN Characteristics
1.1 Characteristics (curves)
Figure 1: Maximum average power dissipation Figure 2: Average and DC on-state current versus
versus average on-state current case temperature

P(W)
1.0
IT(AV)(A)
1.1
D.C. (SOT-223)
0.9 α = 180°
1.0
0.8 0.9
0.7 0.8
0.6 0.7

0.5 0.6
α = 180° (SOT-223)
0.5
0.4
0.4
0.3
360° 0.3
0.2
0.2
0.1 IT(AV)(A) 0.1
α Tlead (°C)
0.0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 25 50 75 100 125

Figure 3: Average and DC on-state current versus Figure 4: Relative variation of thermal impedance
ambient temperature versus pulse duration

IT(AV)(A) K=[Z th(j-a) /Rth(j-a) ]

1.00
1.2
Device mounted on
1.1 FR4 with recommended
D.C. (SOT-223) pad la yout f or SO T-223
1.0
0.9
0.8
0.7
0.6 0.10 SOT-223
α = 180° (SOT-223)
0.5
0.4
0.3
0.2
0.1 t p(s)
Tamb(°C)
0.0 0.01
0 25 50 75 100 125 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Figure 5: Relative variation of gate trigger current Figure 6: Relative variation of holding and latching
and gate voltage versus junction temperature current versus junction temperature
(typical values) (typical values)

IH[RGK] / IH[ RGK = 1 kΩ]

20
T j = 25°C
18
16
14
12
10 Typical values

8
6
4
2
RGK(k Ω)
0
1E-2 1E-1 1E+0 1E+1

DocID031113 Rev 1 3/8

Characteristics P0102MN
Figure 7: Relative variation of static dV/dt Figure 8: Relative variation of static dV/dt
immunity versus gate-cathode resistance immunity versus junction temperature
(typical values) (typical values)

dV/dt[R GK] / dV/dt[RGK = 1kΩ] dV/dt[CGK] / dV/dt[RGK = 1kΩ, CGK = 0 F]

10.0 10
VD = 0.67 xV DRM
T j = 125°C Tj = 125°C
VD = 0.67 x V DRM RGK = 1kΩ
8

6
Typical values
1.0
4
Typical values

RGK(k Ω) CGK (nF)

0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 4 5 6 7

Figure 9: Surge peak on-state current versus Figure 10: Non-repetitive surge peak on-state
number of cycles current for sinusoidal pulse (tp < 10 ms)

ITSM(A) ITSM(A)
8 100.0
T j initial = 25°C
7
tp = 10ms ITSM
6
One cycle
10.0
5
Non repetitive
4 T j initial = 25°C

3 Repetitive
T amb = 36 °C 1.0
2

1
t p (ms)
Number of cycles 0.1
0
1 10 100 1000 0.01 0.10 1.00 10.00

Figure 11: On-state characteristics Figure 12: Thermal resistance junction to ambient
(maximum values) versus copper surface tab

Rth(j-a) (°C/W)
130
120
Epoxy printed circuit board
110
FR4, copper thickness = 35 µm
100
90
80
70
60
50
40
30
20
10 S(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

4/8 DocID031113 Rev 1

P0102MN Package information

2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
 Lead-free package
 Halogen free molding resin
 Epoxy meets UL94, V0

2.1 SOT-223 package information

Figure 13: SOT-223 package outline

DocID031113 Rev 1 5/8

Package information P0102MN
Table 6: SOT-223 package mechanical data
Millimeters Inches(1)
Dim.
Min. Typ. Max. Min. Typ. Max.
A 1.8 0.0709
A1 0.02 0.1 0.0008 0.0039
B 0.6 0.7 0.85 0.0236 0.0276 0.0335
B1 2.9 3 3.15 0.1142 0.1181 0.1240
c 0.24 0.26 0.35 0.0094 0.0102 0.0138
D(2) 6.3 6.5 6.7 0.2480 0.2559 0.2638
e 2.3 0.0906
e1 4.6 0.1811
E 3.3 3.5 3.7 0.1299 0.1378 0.1457
H 6.7 7.0 7.3 0.2638 0.2756 0.2874
V 10º 10°

Notes:
(1)Inches dimensions given only for reference
(2)Does not include mold flash or protusions. Mold flash or protusions must not exceed 0.15 mm (0.006 inches)

Figure 14: SOT-223 recommended footprint (dimensions are in mm)

6/8 DocID031113 Rev 1

P0102MN Ordering information

3 Ordering information
Figure 15: Ordering information scheme

P01 02 M N - xxxx

Series
P = sensitive SCR, high immunity

Gate sensitivity
02 = 200 µA

Voltage
M = 600 V

Package
N = SOT-223

Delivery mode (Packing)

5AA4 = Tape and reel 7‘’

Table 7: Ordering information

Order code Marking Package Weight Base qty. Delivery mode
P0102MN 5AA4 P2M SOT-223 0.12 g 1000 Tape and reel 7"

4 Revision history
Table 8: Document revision history
Date Revision Changes
06-Oct-2017 1 Initial release.

DocID031113 Rev 1 7/8

 P0102MN

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2017 STMicroelectronics – All rights reserved

8/8 DocID031113 Rev 1