IRFZ44N

N-Channel Enhancement-Mode MOSFET

VDS 55V RDS(ON) 20mΩ ID 49A

NCH t
E uc ®

TRENFET w Prod D

G Ne
TO-220AB 0.185 (4.70)
0.170 (4.31)
0.154 (3.91)
0.415 (10.54) Dia. G
0.142 (3.60) 0.055 (1.39)
Max.
0.045 (1.14)
0.113 (2.87)
* 0.102 (2.56)
S
D
0.155 (3.93)
0.134 (3.40)
Features
0.603 (15.32) • Dynamic dv/dt Rating
0.573 (14.55)
0.410 (10.41) • Repetitive Avalanche Rated
0.635 (16.13) 0.360 (9.14)
0.350 (8.89)
0.580 (14.73) 0.330 (8.38)
PIN • 175°C Operating Temperature
G D S 1.148 (29.16)
1.118 (28.40) • Ease of Paralleling
0.104 (2.64) • Fast Switching for High Efficiency
0.094 (2.39)
0.160 (4.06) • Simple Drive Requirements
0.09 (2.28) 0.560 (14.22)
0.530 (13.46)
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
0.037 (0.94)
0.026 (0.66) 0.022 (0.56)
Terminals: Leads solderable per MIL-STD-750,
0.014 (0.36) Method 2026
0.105 (2.67)
0.095 (2.41) High temperature soldering guaranteed:
0.205 (5.20) Dimensions in inches 250°C/10 seconds, 0.17” (4.3mm) from case
0.190 (4.83) and (millimeters)
Mounting Torque: 10 in-lbs maximum
* May be notched or flat
Weight: 2.0g

Maximum Ratings and Thermal Characteristics (T C = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 55 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current TC = 25°C 49
ID
VGS =10V TC = 100°C 35 A
Pulsed Drain Current (1) IDM 160
Maximum Power Dissipation TC = 25°C PD 94 W
(2)
Single Pulse Avalanche Energy EAS 210 mJ
(1)
Avalanche Current IAR 25 A
(1)
Repetitive Avalanche Energy EAR 11 mJ
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 °C
Junction-to-Case Thermal Resistance RθJC 1.6
°C/W
Junction-to-Ambient Thermal Resistance RθJA 62
Notes: (1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 25V, starting TJ = 25°C, L = 470µH, RG = 25Ω, IAS = 25A

5/8/01

This datasheet has been downloaded from http://www.digchip.com at this page

 IRFZ44N
N-Channel Enhancement-Mode MOSFET

Electrical Characteristics (T J = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 55 – – V
VGS = 10V, ID = 25A – 16 20
Drain-Source On-State Resistance(1) RDS(on) mΩ
VGS = 6V, ID = 23A – 18 22
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V
(1)
Forward Transconductance gfs VDS = 25V, ID = 25A 17 78 – S
Drain-Source Leakage Current IDSS VDS = 55V, VGS = 0V – – 25 µA
Gate-Source Leakage IGSS VGS = ± 20V, VDS = 0V – – ± 100 nA
Dynamic
VDS = 44V, ID = 25A,VGS = 5V – 29 40
Total Gate Charge(1) Qg
– 60 65
(1) VDS = 44V, VGS = 10V nC
Gate-Source Charge Qgs – 11 —
ID = 25A
Gate-Drain (“Miller”) Charge(1) Qgd – 13 —
(1)
Turn-On Delay Time td(on) – 19 34
(1)
VDD = 28V
Rise Time tr – 185 240
(1)
ID = 25A, RG = 12Ω ns
Turn-Off Delay Time td(off) – 85 119
RD = 1.1Ω, VGEN = 10V
Fall Time(1) tf – 165 210
Input Capacitance Ciss VGS = 0V – 3223 –
Output Capacitance Coss VDS = 25V – 308 – pF
Reverse Transfer Capacitance Crss f = 1.0MHZ – 135 –
Source-Drain Diode
Continuous Source Current IS – – – 49
(2)
A
Pulsed Source Current ISM – – – 160
Diode Forward Voltage(1) VSD IS = 25A, VGS = 0V – 0.93 1.3 V
(1)
Source-Drain Reverse Recovery Time trr – 53 – ns
(1)
IF = 25A, di/dt = 100A/µs
Source-Drain Reverse Recovery Charge Qrr – 93 – nC
Notes: (1) Pulse width ≤ 300µs; duty cycle ≤ 2%
(2) Repetitive rating; pulse width limited by max. junction temperature

VDD
ton toff

Switching RD Switching
VIN td(on) tr td(off) tf
Test Circuit Waveforms 90% 90 %
D VOUT

VGEN Output, VOUT 10% 10%

INVERTED
RG DUT
G 90%

50% 50%

S Input, VIN 10%

PULSE WIDTH
 IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves

Fig. 1 - Output Characteristics Fig. 2 - Transfer Characteristics

160 100
VGS = 7.0V 6.0V VDS = 10V
140
ID — Drain-toSource Current (A)

10V 80
120

ID — Drain Current (A)

100 60
5.0V
80
40
60
4.5V
40
20
4.0V
20
3.5V
0 0
0 2 4 6 8 10 1 2 3 4 5 6 7
VDS — Drain-to-Source Voltage (V) VGS — Gate-to-Source Voltage (V)

Fig. 3 - On Resistance vs.

Drain Current Fig. 4 - Capacitance
0.04 4000
VGS = 4.5V Ciss
3500
5V
0.03 3000
Capacitance (pF)

2500
6V f = 1MHz
0.02 2000 VGS = 0V
10V
1500

0.01 1000
Crss
500 Coss

0 0
0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60
ID — Drain Current (A) VDS — Drain-to-Source Voltage (V)

Fig. 5 - Gate Charge

10
VDS = 44V
ID = 25A
VGS — Gate-to-Source Voltage (V)

0
0 10 20 30 40 50 60
Qg — Gate Charge (nC)
 IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 6 - Source-Drain Diode Fig. 7 – On-Resistance
Forward Voltage vs. Gate-to-Source Voltage
100 0.04
VGS = 0V I D = 25A

RDS(ON) -- On-Resistance (Ω)

10 0.03

1 0.02

0.1 0.01

0.01 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 4 5 6 7 8 9 10
VSD — Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V)

Fig. 8 – Breakdown Voltage vs.

Junction Temperature Fig. 9 – Threshold Voltage
82 2.8
BVDSS -- Drain-to-Source Breakdown

80
2.4
VGS(th) -- Gate-to-Source

78
Threshold Voltage (V)

76
2
Voltage (V)

74

72
1.6
70

68 1.2

66
64 0.8
--50 --25 0 25 50 75 100 125 150 175 --50 --25 0 25 50 75 100 125 150 175

TJ -- Junction Temperature (°C)

 IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 10 – On-Resistance vs. Junction
Temperature Fig. 11 – Thermal Impedance
2.0 1
VGS = 10V D = 0.5
1.8 ID = 25A

RΘJC (norm) -- Normalized Thermal

0.2
1.6
PDM

Impedance
1.4
0.1 0.1
1.2 t1
0.05 t2

1 Single Pulse

0.8

0.6 0.01
--50 --25 0 25 50 75 100 125 150 175 0.0001 0.001 0.01 0.1 1 10

TJ -- Junction Temperature (°C) Pulse Duration (sec.)

Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area
1000 1000

800 RDS(ON) Limit

ID -- Drain Current (A)

10
0µ
100 s
600
Power (W)

1m
s
10
400 100ms ms
10

200 DC

0 1
0.0001 0.001 0.01 0.1 1 10 1 10 100

Pulse Duration (sec.) VDS -- Drain-Source Voltage (V)