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Ultra-Tiny Micropower, 1A Ideal Diode MAX40200

with Ultra-Low Voltage Drop

General Description Benefits and Features

The MAX40200 is an ideal diode current-switch that drops ● Save Critical Voltage Drop in Portable Application
so little voltage that it approaches an order of magnitude • Drops Less Than 43mV at 500mA; 85mV at 1A
better than Schottky diodes. ● Longer Battery Life
When forward-biased and enabled, the MAX40200 • Low Leakage When Reverse-Biased: 70nA (Typ),
conducts with as little as 85mV of voltage drop while carrying 1.5µA (Max)
currents as high as 1A. Typical voltage drop is 43mV at • Low Supply Quiescent Current: 7µA (Typ), 18µA (Max)
500mA, with the voltage drop increasing linearly at higher ● Saves Space Over Larger Schottky Diodes
currents. The MAX40200 thermally protects itself, and any • Tiny 0.73mm x 0.73mm 4-bump WLP
downstream circuitry, from overtemperature conditions. • SOT23-5 Package
When disabled (EN = low) the MAX40200 blocks voltages ● Supply Voltage Range 1.5V to 5.5V
up to 6V in either direction, making it suitable for most
● Thermally Self-Protecting
low-voltage, portable electronic devices. The MAX40200
operates from a supply voltage of 1.5V to 5.5V. ● -40°C to +125°C Temperature Range
The MAX40200 is available in a tiny, 0.73mm X 0.73mm,
4-bump wafer-level package (WLP), with a 0.35mm bump Functional Diagram and Package
pitch and only 0.5mm high and 5-pin SOT-23 package.
The MAX40200 operates over the extended -40°C to
+125°C temperature range. VDD OUT

Applications
● Notebook and Tablet Computers
● Portable Media Players
● Cellular Phones EN
● Portable/Wearable Medical Devices
● Electronic Toys
● USB-Powered Peripherals

GND
Ordering Information appears at end of data sheet.

19-8728; Rev 4; 2/23

© 2023 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
One Analog Way, Wilmington, MA 01887 U.S.A. | Tel: 781.329.4700 | © 2023 Analog Devices, Inc. All rights reserved.
MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Absolute Maximum Ratings

Any Pin to GND........................................................-0.3V to +6V 4 WLP
Continuous Current Into EN................................................10mA Thermal Resistance (Multi-Layer Board)
Continuous Current Flowing Between VDD and OUT Junction to Ambient (θJA)..........................................104.41°C/W
(WLP Package).................................................................1.2A 5 SOT-23
Continuous current flowing between VDD and OUT Thermal Resistance (Multi-Layer Board)
(SOT23-5 Package)...........................................................1.0A Junction to Ambient (θJA)..........................................255.90°C/W
Maximum Power Dissipation Junction to Case (θJC).....................................................81°C/W
WLP, Derate 9.58mW/°C above +70°C........................766mW Operating Temperature Range ......................... -40°C to +125°C
SOT, Derate 3.90mW/°C above +70°C...................312.60mW Junction Temperature.......................................................+150°C
Storage Temperature Range............................. -65°C to +150°C
Reflow Soldering Peak Temperature (Pb-free)................ +260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.

Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.

Electrical Characteristics
VDD = 3.3V, GND = 0V, EN = VDD, TA = -40°C to +125°C, unless otherwise noted. Typical values are at +25°C (Note 2)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage Range VDD Guaranteed by DVON_FRWD 1.5 5.5 V
EN = VDD, IFORWARD = 0 mA 7 18
Quiescent Current IDD µA
EN = VGND, IFORWARD = 0 mA 0.7 2.5
Quiescent Current in Reverse Current drawn from VDD; VOUT - VDD = 0.1V -1.5 0.072 1.5
µA
Operation Current drawn from OUT; VOUT - VDD = 0.1V 1.2 3.5
Current sourced into VDD; VDD = 0V,
VDD Leakage Current -5.5 -0.55 +2.5 µA
VOUT = 5.5V
Forward Turn-On Threshold Voltage between VDD and OUT (VDD more
VON_FRWD 18 40 mV
Voltage positive than OUT) IFORWARD = 1mA
Forward Turn-On Threshold
Voltage Change Over Supply DVON_FRWD VDD = 1.5V to 5.5V -3 +0.2 +3 mV
Voltage
Reverse Turn-Off Threshold VOFF_REV Voltage between VDD and VOUT 20 mV
IFORWARD = 100mA 21 52
IFORWARD = VDD = 1.5V 45 89
Forward Voltage 200mA
VFWD VDD = 3.3V 24 57 mV
(VDD – VOUT) (WLP Only)
IFORWARD = 500mA 43 89
IFORWARD = 1A 85 175
IFORWARD = 100mA 32 65
IFORWARD = VDD = 1.5V 63 110
Forward Voltage (VDD – VOUT) 200mA
VFWD VDD = 3.3V 46 90 mV
(SOT Only)
IFORWARD = 500mA 97 175
IFORWARD = 1A (Note 3) 197 350

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Electrical Characteristics (continued)

VDD = 3.3V, GND = 0V, EN = VDD, TA = -40°C to +125°C, unless otherwise noted. Typical values are at +25°C (Note 2)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Capacitive Load Range COUT Stable for all load currents 0.3 - 100 µF
Thermal Protection Threshold 154 °C
Thermal Protection Hysteresis 10 °C
ENABLE (EN) CHARACTERISTICS
Low-Level Input Current EN = 0V -1 -0.1 +0.1 µA
Low-Level Voltage Level LOW 0.6 V
High Input Voltage Level HIGH 1.2 V
High Level Input Current EN = VDD 0.5 2.5 µA
Enable Input Hysteresis 50 mV
IFORWARD reaching 90% of its final value
Enable Time with a resistive load (ROUT) = 33Ω and 4.7µF, 65 µs
enable input toggled from 0V to 3.3V
IFORWARD prior to disable = 100mA,
IFORWARD reaching ≤ 1mA resistive load
Disable Time 1.6 ms
(ROUT) = 33Ω and 4.7µF, enable input
toggled from 0V to 3.3V
Power-Up Delay Time 65 µs
Note 2: All devices are production tested at TA = + 25°C. Specifications over temperature are guaranteed by design
Note 3: 1A pulsed current in duty cycle used for this test to make sure the device’s self heating is negligible. For more information,
see Thermal Performance and Power Dissipation Information section.

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Typical Operating Characteristics

VDD = 3.3V, GND = 0V, EN = VDD, 100mA load or IFORWARD and 10µF COUT on OUT, TA = -40°C to +125°C, unless otherwise noted.
Typical values are at +25°C.

QUIESCENT SUPPLY CURRENT GROUND CURRENT GROUND CURRENT

vs. SUPPLY INPUT VOLTAGE toc01
vs. FORWARD/LOAD CURRENT toc02a
vs. FORWARD/LOAD CURRENT toc02b
24 70 75
Refer to Figure 1 for Test Setup Conditions VDD = 1.5V VVDD = 3.3V
DD = 3.3V
IFWD/LOAD = 0mA
60
20
QUIESCENT SUPPLY CURRENT (μA)

GROUND CURRENT (μA) TA = 85°C

TA = 125°C 50

GROUND CURRENT (μA)

16 50 TA = 125°C
TA = 85°C 40 TA = 85°C
12 TA = 125°C
30

8 25
20 TA = 25°C TA = 25°C
TA = 25°C
4 10 TA = -40°C TA = -40°C
TA = -40°C
Refer to Figure 1 for Test Setup Conditions Refer to Figure 1 for Test Setup Conditions
0 0 0
0 1 2 3 4 5 6 0 200 400 600 800 1000 0 200 400 600 800 1000
SUPPLY INPUT VOLTAGE (V) FORWARD/LOAD CURRENT(mA) FORWARD/LOAD CURRENT(mA)

GROUND CURRENT FORWARD VOLTAGE vs. FORWARD CURRENT

vs. FORWARD/LOAD CURRENT (WLP)
toc02c toc03a
100 400
VDD = 5.5V VVDD
DD==1.5V
1.5V
TA = 125°C Refer to Figure 1 for Test Setup Conditions
TA = 85°C TA = 85°C
FORWARD VOLTAGE (mV)
GROUND CURRENT (µA)

75 300

TA = 125°C
Thermal Limit Reached
50 200
TA = 25°C TA = 25°C

25 100 TA = -40°C
TA = -40°C

Refer to Figure 1 for Test Setup Conditions

0 0
0 200 400 600 800 1000 0 250 500 750 1000
FORWARD/LOAD CURRENT(mA) FORWARD CURRENT (mA)

FORWARD VOLTAGE vs. FORWARD CURRENT FORWARD VOLTAGE vs. FORWARD CURRENT
(SOT) (WLP)
toc03b toc03c
700 150
VDD = 1.5V VDD = 3.3V
Refer to Figure 1 for Test Setup Conditions Refer to Figure 1 for Test Setup Conditions
600 125
FORWARD VOLTAGE (mV)

FORWARD VOLTAGE (mV)

500
TA = 85°C 100
400 TA = 85°C
TA = 125°C 75
Themal Limit Reached TA = 125°C
300
TA = 25°C
50
200 TA = 25°C
TA = -40°C
100 25 TA = -40°C

0 0
0 250 500 750 1000 0 250 500 750 1000
FORWARD CURRENT (mA) FORWARD CURRENT (mA)

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Typical Operating Characteristics (continued)

VDD = 3.3V, GND = 0V, EN = VDD, 100mA load or IFORWARD and 10µF COUT on OUT, TA = -40°C to +125°C, unless otherwise noted.
Typical values are at +25°C.

FORWARD VOLTAGE vs. FORWARD CURRENT FORWARD VOLTAGE vs. FORWARD CURRENT FORWARD VOLTAGE vs. FORWARD CURRENT
(SOT) toc03d
(WLP) toc03e
(SOT) toc03f
300 100 250
VDD = 3.3V VDD = 5.5V VDD = 5.5V
Refer to Figure 1 for Test Setup Conditions Refer to Figure 1 for Test Setup Conditions Refer to Figure 1 for Test Setup Conditions
250 TA = 85°C
TA = 85°C 200

FORWARD VOLTAGE (mV)

FORWARD VOLTAGE (mV)
FORWARD VOLTAGE (mV)

75
TA = 85°C TA = 125°C
200 TA = 125°C Thermal Limit Reached
TA = 125°C 150
Themal Limit Reached
150 50
100
100 TA = 25°C TA = 25°C TA = 25°C
25
TA = -40°C TA = -40°C 50 TA = -40°C
50

0 0 0
0 250 500 750 1000 0 250 500 750 1000 0 250 500 750 1000
FORWARD CURRENT (mA) FORWARD CURRENT (mA) FORWARD CURRENT (mA)

CATHODE CURRENT ANODE CURRENT

AT REVERSE OPERATION AT REVERSE OPERATION
toc04 toc05
5 3
VDD = 0V ICATHODE VDD = 0V IANODE
4.5 Refer to Figure 2 for Test Setup Conditions Refer to Figure 2 for Test Setup Conditions
2.5
CATHODE CURRENT (µA)

4
TA = 85°C
ANODE CURRENT (μA)

3.5 TA = 125°C 2

3 TA = 25°C
1.5
2.5 TA = 85°C TA = 125°C
1
2
1.5 0.5
1
TA = 25°C 0
0.5
TA = -40°C TA = -40°C
0 -0.5
0 1 2 3 4 5 6 0 1 2 3 4 5 6
VOUT (V) VOUT (V)

GROUND CURRENT ANODE CURRENT

AT REVERSE OPERATION AT REVERSE OPERATION
toc06 toc07
2.5 0.2
VDD = 0V IGND TA = 125°C VDD = 3.3V
VOUT-VDD = 0.1V
2 0.15
GROUND CURRENT (µA)

Refer to Figure 2 for Test Setup Conditions

INPUT CURRENT INTO VIN (µA)

TA = 85°C

1.5 0.1

1 TA = 25°C 0.05

0.5 0
TA = -40°C

0 -0.05

Refer to Figure 2 for Test Setup Conditions

-0.5 -0.1
0 1 2 3 4 5 6 -40 -25 -10 5 20 35 50 65 80 95 110 125
VOUT (V) TEMPERATURE (°C)

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Typical Operating Characteristics (continued)

VDD = 3.3V, GND = 0V, EN = VDD, 100mA load or IFORWARD and 10µF COUT on OUT, TA = -40°C to +125°C, unless otherwise noted.
Typical values are at +25°C.

POWER-UP DELAY toc9

CATHODE CURRENT
AT REVERSE OPERATION toc08
3
VDD = 0V
VOUT = 5.5V 3.3V
2.5 Refer to Figure 2 for Test Setup Conditions 2V/div
OUTPUT CURRENT FROM VOUT (µA)

VDD

3.3V
1.5

1 1V/div

0.5
VOUT

0
-40 -25 -10 5 20 35 50 65 80 95 110 125 RLOAD = 3.3kΩ
20µs/div
TEMPERATURE (°C)

ENABLE TRANSIENT ENABLE TRANSIENT

IFWD = 1A toc10a IFWD = 100mA toc10b

3.3V 3.3V
2V/div 2V/div
V(EN) V(EN)

3.3V 3.3V

1V/div 1V/div

VOUT VOUT

10µs/div CLOAD = 4.7µF 10µs/div CLOAD = 4.7µF

DISABLE TRANSIENT DISABLE TRANSIENT

IFWD = 1A IFWD = 100mA toc11b
toc11a

3.3V 3.3V
2V/div 2V/div
V(EN) V(EN)

3.3V 3.3V

1V/div 1V/div
VOUT VOUT

CLOAD = 4.7µF 400µs/div CLOAD = 4.7µF

100µs/div

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Test Setup

+ VFWD -

EN

IFORW ARD/LOAD

VDD/ANODE
OUT/
VDD CATHODE
RLOAD

IGND/IQUIESCENT

GND

FORWARD-BIASE D CONDITION

EN

OUT/CATHODE
IANODE

VDD/ANODE ICATHODE
VDD

IGND/IQUIESCENT

GND

REVERSE-BIASE D CONDITION

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Pin Configurations

TOP VIEW
MAX40200
TOP VIEW
1 2
+ +
VDD 1 5 OUT
A VDD OUT
0.76mm
MAX40200
GND 2
B EN GND

EN 3 4 NC
WLP

0.76mm SOT-23
0.35mm PITCH AND 0. 50mm HE IGHT

Pin Description
WLP 5 SOT-23 NAME FUNCTION
A1 1 VDD Supply Input or Anode.
A2 5 OUT Ideal Diode Output or Cathode.
Active-High Enable Input with a Weak Internal Pullup. Drive EN high to
B1 3 EN
enable the device, and pull it low to disable the device.
B2 2 GND Circuit Ground and Substrate Connection.
— 4 N.C. No Connect. Internally not connected.

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Detailed Description It should be noted, however, that, unlike normal diodes,

The MAX40200 mimics a near-ideal diode. The device this “ideal diode” is not suited to rectifying AC. In applications
blocks reverse-voltages and passes current when forward- where the supply is inductively coupled, conventional
biased just as a normal diode. The improvements are that diodes should be used for the rectification part of the
instead of a cut-in voltage around 500mV and a logarithmic circuitry. MAX40200 is designed to be used in applications
voltage-current transfer curve, the MAX40200 has a near to switch between different DC sources.
constant voltage drop independent of the magnitude of Principle of Operation
the forward current flowing through it. This voltage drop is
The MAX40200 features an internal pMOSFET to pass
around 45mV at 500mA of forward or load current.
the current from the VDD input to the OUT output. The
The constant forward voltage drop significantly helps with internal MOSFET is controlled by circuitry that:
supply regulation; a normal diode typically drops an additional
1) Creates the 18mV constant forward drop when the
60mV for every 10 times change in current through it. MAX40200 is forward-biased.
Similar to a normal diode, the MAX40200 also becomes 2) Turns the MOSFET off when the part is reverse-biased.
resistive as the forward current exceeds the specified
limit (see Figure 1). Unlike a normal diode, should the 3) Turns the MOSFET off if the enable input is pulled low.
MAX40200 exceed the specified temperature, it will turn 4) Turns the device off when the device temperature
off in order to protect itself and the circuitry connected to exceeds the thermal protection threshold.
it. Like a normal diode MAX40200 will turn-off when it is This control circuitry consumes 7µA typical current and
reverse biased. The turn-on and turn-off times for enable this limits the rate at which the internal MOSFET can be
and disable responses are similar to those of forward and turned on/off.
reverse bias conditions.
To ensure the control loop remains stable for all output
MAX40200 has an enable function feature. Unlike a normal current levels, there should always be a minimum of
diode the device can be turned off when not required. 0.33µF connected to the OUT output and likewise, a minimum
When turned off, it blocks voltages on either side to of 0.33µF on the VDD input.
a maximum of 6V above ground. This feature allows
MAX40200 to be used, to switch supply sources, or to These capacitors also improve the surge capability of
control which sub-systems are to be powered up. power supply. In general for higher Output Capacitive
Loads [e.g., COUT = 10µF], then CIN should be kept to
COUT/10 (µF) for optimum transient response.

150 Applications Information

VDD = 3.3V The simplest application would be as shown in Figure 2,
125 REFER TO FIGURE 2 FOR TEST SETUP where the battery has to be disconnected from the load
CONDITIONS when the wall-supply is connected. Often, the wall-supply
FORWARD VOLTAGE (mV)

can handle the additional losses of a normal diode, so it

100 would use a regular diode to prevent battery power from
TA = 125°C flowing back into it.
75 The battery, on the other hand, benefits significantly by
only losing 30mV when powering the load, thus increasing
TA = 85°C
50 the battery life between charging cycles.
TA = -40°C TA = 25°C For systems that require more than the 500mA that the
MAX40200 is specified for, it may be convenient to split
25
the load up into various sections that could also benefit
from the individual power enabling that the MAX40200’s
0 Enable pins offer.
1 10 100 1000
This also suggests that any integrated circuit without built-
FORWARD CURRENT (mA)
in power-down capability can have it added by powering it
through a MAX40200.
Figure 1. Forward Voltage vs. Forward Current (WLP)
This allows many parts to be used in portable and other
power-sensitive products.

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

DIODE (D1)
FROM WALL ADAPTER

IDEAL DIODE
MAX40200

LOAD
BATTERY
EN

Figure 2. Diode ORing Circuit 1

DIODE (D1)
FROM WALL ADAPTER

DIODE (D2)

IDEAL DIODE (1)

MAX40200

LOAD-A
BATTERY EN

IDEAL DIODE (2)

MAX40200

LOAD-B

EN

Figure 3. Diode ORing Circuit 2

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

MAX40200

BATTERY
SUB SUB SUB
CIRCUIT 1 CIRCUIT 2 CIRCUIT-N
EN

Figure 4. Typical Application Circuit

Thermal Performance and Power For example:

Dissipation Information WLP:
Although the device is guaranteed for TA = -40°C to At 1A IFWD, TA = 85°C. VFWD = 110mV. Therefore,
125°C, care must be taken when using heavy loads PDIS = 110mW.
(e.g., IFWD above 500mA to 1A) where the forward Package Derate Calculation:
current across the ideal diode is large. The forward voltage
For 85°C: Maximum Power Dissipation from the data
drop across the VDD and OUT pins increases linearly
sheet: 766mW – [(85 - 70) x 9.58] = 622mW. The device is
with forward current. The device’s power dissipation is
within specification. Therefore, the junction temperature:
directly proportional to the voltage drop across the device.
85°C + (104.41°C/W x 0.110W) = 85°C + 11.5°C = 96.5°C
The power dissipation is going to be the differential
SOT-23 (Small Outline Transistor Package):
voltage (VFWD) multiplied by the current passed
by the device (IFWD). The quiescent current of the At 1A IFWD, TA = 85°C. VFWD = 250mV. Hence,
device is negligible for these calculations. The ambient PDIS = 250mW.
temperature is essentially the PCB temperature, since Package Derate Calculation:
this is where all the heat is sunk to. Therefore, the
For 85°C: Maximum Power Dissipation from the data
parts temperature rise is [VFWD x IFWD x θJA] + TA,
sheet: 312.6mW – [(85 - 70)°C x 3.9mW/°C] = 254.1mW.
where TA is the temperature of the board or ambient
The device is very close to the power dissipation ratings
temperature. From this exercise, we observe that the
provided in the absolute maximum specification.
internal temperature from power dissipation will be higher
than the ambient temperature. The device has an internal Hence the device’s junction temperature: 85°C +
thermal shutdown temperature of about +154°C and, (255.90°C/W x 0.2541W) = 85°C + 65.02°C = 150.02°C
typically, 12°C hysteresis. As the above example shows, the thermal performance of
the WLP exceeds the SOT package.
When the device’s junction temperature rises to 154°C
thermal trip is triggered, the thermal cycle for the WLP
and SOT packages are shown in Figure 5 and Figure 6.

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

TA = 125°C TA = 125°C

Figure 5. Thermal Protection (WLP) Figure 6. Thermal Protection (SOT)

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Ordering Information Chip Information

TEMP PIN- PROCESS: BiCMOS
PART TOPMARK
RANGE PACKAGE
-40°C to
MAX40200ANS+ 4 WLP +3
+125°C
-40°C to
MAX40200AUK+
+125°C
5 SOT23 AMIP Package Information
+Denotes a lead(Pb)-free/RoHS-compliant package. For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.

PACKAGE PACKAGE LAND

OUTLINE NO.
TYPE CODE PATTERN NO.
Refer to
4 WLP N40C0+1 21-100103
App Note 1891
5 SOT23 U5+1 21-0057 90-0174

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MAX40200 Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop

Revision History
REVISION REVISION PAGES
DESCRIPTION
NUMBER DATE CHANGED
0 12/16 Initial release —
Updated Electrical Characteristics table, correct typos in Applications and
1 4/17 Detailed Description sections, added TOC, and removed future product asterisk 1–3, 9, 13
from SOT version
2 12/19 Updated Pin Description 8
3 2/20 Updated Pin Description table 8
4 2/23 Updated Ordering Information table 13

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is
assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that
may result from its use.Specifications subject to change without notice. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the
property of their respective owners.

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