16 A Triac, High Temperature and Logic Level: Applications
16 A Triac, High Temperature and Logic Level: Applications
A2 Applications
Electric heater
Water heater, room heater
G
A1
Coffee machine
A2
Hand dryer
Thermostat
A1
A2 G Description
TO-220AB This clip technology Triac has very high thermal
(T1610H-6T) cycling performance, and the design structure
presents a higher ITSM. The 150 °C maximum
junction temperature of this device offers easier
thermal management. Its 10 mA gate current
offers direct drive from a microcontroller, mainly
Features for resistive load control.
Junction temperature up to 150 °C max.
Table 1. Device summary
Logic level gate current: 10 mA
VDRM,
Repetitive peak off-state voltage: 600 V Order code Package
VRRM
IGT IT(RMS)
High ITSM
T1610H-6T TO-220AB 600 V 10 mA 16 A
High thermal cycling performance
1 Characteristics
MIN. 0.5 mA
IGT VD = 12 V, RL = 33 I - II - III
MAX. 10 mA
IDRM, Tj = 25 °C 5 µA
VD = VDRM, VR = VRRM
IRRM Tj = 150 °C 2 mA
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
average on-state current (full cycle) temperature (full cycle)
P(W) IT(RMS)(A)
18 18
16 16
14 14
12 12
10 10
8 8
6 6
4 180° 4
2 2
IT(RMS)(A) TC(°C)
0 0
0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150
Figure 3. On-state rms current versus ambient Figure 4. Relative variation of thermal
temperature (free air convection) impedance versus pulse duration
IT(RMS)(A) K = [Zth / Rth]
3.5 1.0E+00
Zth(j-c)
3.0
Zth(j-a)
2.5
2.0
1.0E-01
1.5
1.0
0.5
Ta(°C) tp(s)
0.0 1.0E-02
0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Figure 5. Relative variation of gate trigger Figure 6. Relative variation of holding and
current and voltage versus junction latching current versus junction temperature
temperature (typical values) (typical values)
IGT,VGT [T j] / IGT,VGT [T j=25 °C] IH, IL[Tj] / IH, IL[Tj = 25 °C]
3.0 2.5
2.5 IGT Q3
2.0
2.0
1.5
IGT Q1-Q2
1.5
1.0
VGT
1.0
IL
0.5
0.5
IH
Tj(°C) Tj(°C)
0.0 0.0
-50 -30 -10 10 30 50 70 90 110 130 150 -50 -30 -10 10 30 50 70 90 110 130 150
Figure 7. Relative variation of dV/dt immunity Figure 8. Relative variation of critical rate of
versus junction temperature (typical values) decrease of main current (di/dt)c versus
junction temperature (typical values)
dV/dt [Tj] / dV/dt [Tj = 150 °C] (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
15 15
14 VD=VR=402 V 14
13 13
12 12
11 11
10 10
9 9
8 8
7 7
6 6
5 5
4 4
3 3
2 2
1 Tj(°C) 1 Tj(°C)
0 0
25 50 75 100 125 150 25 50 75 100 125 150
Figure 9. Relative variation of critical rate of Figure 10. Surge peak on-state current versus
decrease of main current (di/dt)c versus number of cycles
reapplied (dV/dt)c
(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c ITSM(A)
3 170
160
150
140 t = 20 ms
130
120 Non repetitive One cycle
2
110 Tj initial=25 °C
100
90
80
70
1 60
50
40
30
20 Repetitive
(dV/dt)c (V/µs) 10 TC=133 °C Number of cycles
0 0
0.1 1.0 10.0 100.0 1 10 100 1000
Figure 11. Non repetitive surge peak on-state Figure 12. On-state characteristics (maximum
current for a sinusoidal pulse with width values)
tp < 10 ms, and corresponding value of I²t
ITSM (A), I²t (A²s) ITM (A)
1000
10000
dI/dt limitation: 100 A/µs Tj initial=25 °C
100 I²t 10
T j max :
Vto = 0.80 V
Tj=150 °C Tj=25 °C
sinusoidal pulse with width tp<10 ms tp(ms) VTM (V) Rd = 22 m\
10 1
0.01 0.10 1.00 10.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
IDRM, IRRM [Tj; VDRM, VRRM] / IDRM, IRRM [Tj = 150 °C; 600 V]
1.0E+00
VDRM=VRRM=600 V
1.0E-01 VDRM=VRRM=400 V
1.0E-02 VDRM=VRRM=200 V
1.0E-03
Tj(°C)
1.0E-04
25 50 75 100 125 150
2 Package information
ØI b2
L
F
I4
l3
a1 c2
l2
a2
M
b1 c1
e
3 Ordering information
T 16 10 H - 6 T
Triac series
Current
16 = 16 A rms
Gate sensitivity
10 = 10 mA
High temperature
Voltage
6 = 600 V
Package
T = TO220AB
Delivery mode
Blank = tube
4 Revision history
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