156DF - Vlsi Design

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Code No: 156DF R18

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD


B. Tech III Year II Semester Examinations, August - 2022
VLSI DESIGN
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(Electronics and Communication Engineering)
Time: 3 Hours Max.Marks:75
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Answer any five questions
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All questions carry equal marks
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1.a) Explain n-well CMOS Process with necessary sketches.


b) Explain MOS system under external bias with necessary diagram. [8+7]
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2.a) Derive the Drain to source current Ids versus voltage Vds relationship for a NMOS
Transistor when the transistor is in i) Non-saturated region. ii) Saturated region.
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b) Discuss about the MOS transistor figure of merit W0. [8+7]

3.a) Draw the stick diagram, and layout diagram of NMOS inverter.
b) Draw and explain the CMOS lambda based design rules for transistors and wires. [7+8]
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4.a) Draw the stick diagram and mask layout for CMOS two input NOR gate.
b) Discuss CMOS design style. Compare with nMOS design style. [8+7]
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5.a) Draw and explain fan-in and fan-out characteristics of different CMOS design
technologies.
b) What are the alternate gate circuits are available? Explain any one of item with
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suitable sketch. [8+7]

6.a) Explain the concept of driving large capacitive loads with, relevant examples.
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b) Discuss the inverter delay and propagation delay. [8+7]

7.a) Explain step-by-step subsystem design approach. Consider an example.


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b) Compare SRAM and DRAM. [8+7]

8.a) Discuss the overflow of system on chip designs.


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b) Explain the FPGA design flow. [7+8]
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