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    Laporan Praktikum Jobsheet 2 Kelompok 5 Elektronika Daya

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    Abdullah Ni'am

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    Laporan Praktikum Jobsheet 2 Kelompok 5 Elektronika Daya

    Uploaded by

    Abdullah Ni'am
    3 views7 pages

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    LAPORAN PRAKTIKUM JOBSHEET 2 KELOMPOK 5 ELEKTRONIKA DAYA

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    3 views7 pages

    Laporan Praktikum Jobsheet 2 Kelompok 5 Elektronika Daya

    Uploaded by

    Abdullah Ni'am

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    LAPORAN PRAKTIKUM KELOMPOK 5

    ELEKTRONIKA DAYA
    “Jobsheet 2”

    Dosen Pengampu: 1. Bu Riana Defi Mahadji Putri, S.T., M.T

    2. Pak Prof. Dr. Subiyanto, S.T., M.T

    Nama Kelompok: 1. Melisa Andayani (5301421012)

    2. Juan Frangklin Orlando Mangge (5301421018)

    3. Maulana Riski Saputra (5301421021)

    PENDIDIKAN TEKNIK ELEKTRO

    JURUSAN TEKNIK ELEKTRO

    FAKULTAS TEKNIK

    UNIVERSITAS NEGERI SEMARANG

    2023/2024
    PRACTICAL EXERCISES MANUAL

    Unit ref.: N-M9 Date: February 2017 Pg: 30 / 156

    Figure 3.1.10

    7.3.2.6 Maximum voltage graduator source

    The MOSFET of the depletion and enhancement type has a thin layer of
    insulating silicon oxide, which avoids the graduator current for graduator voltages for
    positive as well as for negative ones. Since the insulating layer is very thin, it is easy
    to destroy it if an excessive graduator - source voltage is applied.

    The thin insulating layer can be damaged in other ways, in addition to the
    direct application of an excessive voltage VGS. If a MOSFET is withdrawn or inserted
    in a circuit when the power supply is connected, the transient voltages caused by
    inductive inversions and other effects can exceed the nominal voltage V GS(max) and
    leave the MOSFET useless. Even upon picking up a MOSFET with the hand can
    induce a static charge that exceeds the nominal voltage VGS(max).

    Some MOSFET are protected with an internal Zener diode that is connected
    between the graduator and the source. The Zener voltage is less than the nominal
    voltage VGS(max). Therefore, the Zener diode is destroyed before any damage is done to
    the thin insulating layer.
    PRACTICAL EXERCISES MANUAL

    Unit ref.: N-M9 Date: February 2017 Pg: 31 / 156

    7.3.3 Practice 4: Study of the MOSFET transistor

    7.3.3.1 Circuits 3 and 4

    Circuit 3 is a MOSFET transistor type n with an input resistance of 1 K and


    two Zener diodes of 15 V between gate and source that protect it from too high
    voltages.

    Circuit 4 is a MOSFET transistor type p with the same additional elements


    as the previous circuit.

    Figure 3.2.1

    7.3.3.2 Practice carrying out

    Remember that for a correct operation of all the circuits, the failure switches
    should be in the position N, that is to say, downward.

    To carry out the practice make the following assembly (figure 3.2.2):

    • Set an ammeter to measure the drain-source current between points 3.4


    and 10.3.
    PRACTICAL EXERCISES MANUAL

    Unit ref.: N-M9 Date: February 2017 Pg: 32 / 156

    • Set the voltmeter of circuit 1 in its intermediate position.

    • Put a link between points 10.1 and 10.2.

    • Feed the circuit by pressing the switch of the base box EBC-100.

    Figure 3.2.

    With a voltmeter measure the voltage between gate and source and select
    little by little the values from table 3.2.1. Measure the current I DS and make a note
    of it.
    PRACTICAL EXERCISES MANUAL

    Unit ref.: N-M9 Date: February 2017 Pg: 33 / 156

    VGS IDS

    1'8 V 105 mA
    2'0 V 100 mA

    2'2 V 100 mA
    2'4 V 90 mA

    2'6 V 97 mA

    2'8 V mA
    98
    3'0 V 97 mA

    3'2 V 97 mA

    Table 3.2.1.

    C2.1. Which is approximately the threshold voltage value?

    3,8 V

    C2.1. Which is the value of the maximum current consumed by the lamp?

    105 mA

    Controlling the voltage that is supplied to the transistor by the gate using the
    voltmeter of the circuit 1, fill in table 3.2.2. (P is the power dissipated by the transistor).
    On the last low, make a note of the obtained results for the maximum consumption
    situation.
    PRACTICAL EXERCISES MANUAL

    Unit ref.: N-M9 Date: February 2017 Pg: 34 / 156

    IDS IG VDS P

    0 mA 1,25 mA 0,03 V 0 mW
    3 0,05 0,5
    10 mA mA V mW
    3,5 1.25 25
    20 mA mA V mW

    30 mA 3 mA 3 V 90 mW

    40 mA 4.6 mA 1,25 V 50 mW

    MA mA V mW

    Table 3.2.2.

    C2.3. Which is the power dissipated when I DS is 20 mA?

    25mW

    The current consumed by the lamp can be controlled through the voltage
    control in the gate. An easy way is to send a train of modulated pulses in width so
    that the superior voltage of the pulse will be capable of making the transistor to conduct
    totally.

    In the practice board, circuit 6 is a pulse generator. Using the voltmeter


    PT6.1, the frequency can be modulated, and through PT6.2 the width of the positive
    part.

    To appreciate properly this type of control you will need an oscilloscope.

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