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Solid state electronic devices streetman 6th edition pdf
SOLID STATE ELECTRONIC DEVICES, SIXTH EDITION BY BEN G. STREETMAN AND SANJAY KUMAR BANERJEE A widely used textbook for students of solid state electronic devices, this book aims to provide a comprehensive understanding of semiconductor devices and their operating principles. The two-fold approach helps students develop a
basic knowledge of existing devices and the tools necessary to learn about new applications and latest technologies. The sixth edition of Solid State Electronic Devices covers all important semiconductor devices in great detail, reflecting current trends in technology and theoretical understanding. Due to high demand for this book, we have limited
daily downloads. **Chapter 3: Energy Bands and Charge Carriers in Semiconductors** This chapter explores the fundamental properties of semiconductors, including their energy bands and charge carriers. It discusses: * The bonding forces and energy bands in solids * The distinction between metals, semiconductors, and insulators * The
classification of semiconductors as direct or indirect * The variation of energy bands with alloy composition * Charge carriers, including electrons and holes, their effective mass, and intrinsic/extrinsic material properties * Carrier concentrations, Fermi levels, and temperature dependencies * Drift of carriers in electric and magnetic fields,
conductivity, mobility, and resistance **Chapter 4: Excess Carriers in Semiconductors** This chapter delves into the behavior of excess carriers in semiconductors, including: * Optical absorption and luminescence (photoluminescence and electroluminescence) * Carrier lifetime and photoconductivity * Direct and indirect recombination, trapping, and
steady-state carrier generation * Diffusion of carriers, diffusion processes, and built-in fields * The Haynes-Shockley experiment and gradients in the quasi-Fermi levels **Chapter 5: Junctions** This chapter focuses on semiconductor junctions, including: * Fabrication techniques (thermal oxidation, diffusion, rapid thermal processing, ion implantation,
CVD, photolithography, etching, metallization) * Equilibrium conditions, contact potential, and space charge at a junction * Forward- and reverse-biased junctions, carrier injection, and steady-state conditions * Reverse-bias breakdown (Zener and avalanche breakdown), rectifiers, and breakdown diodes * Transient and AC conditions, time variation of
stored charge, reverse recovery transient, switching diodes, capacitance of p-n junctions, and varactor diodes * Deviations from simple theory, including contact potential effects on carrier injection, recombination and generation in the transition region, ohmic losses, and graded junctions * Metal-semiconductor junctions, Schottky barriers, rectifying
contacts **Semiconductor Device Fundamentals** This section covers the principles and characteristics of various semiconductor devices, including Schottky barriers, heterojunctions, field-effect transistors (FETs), bipolar junction transistors (BJTs), and optoelectronic devices. **Field-Effect Transistors (FETs)** * FET operation involves controlling
the flow of current between two electrodes using a voltage applied to a third electrode. * Different types of FETs, including Junction FETs, Metal-Semiconductor FETs (MESFETs), and Metal-Inulator-Semiconductor FETs (MISFETs or MOSFETs), are discussed in detail. * Characteristics such as amplification, switching, current-voltage relationships,
and mobility models are explored. **Bipolar Junction Transistors (BJTs)** * BJT operation involves controlling the flow of current between three electrodes using a voltage applied to one electrode. * Topics covered include amplifier design, fabrication techniques, minority carrier distributions, terminal currents, and switching characteristics. *
Important effects such as drift in the base region, base narrowing, avalanche breakdown, injection level, and thermal effects are also discussed. **Optoelectronic Devices** * This section covers photodiodes, light-emitting diodes (LEDs), solar cells, photodetectors, lasers, and semiconductor lasers. * Topics include current and voltage in illuminated
junctions, gain, bandwidth, signal-to-noise ratio of photodetectors, light-emitting materials, fiber-optic communications, population inversion at a junction, emission spectra for p-n junction lasers, heterojunction lasers, and materials for semiconductor lasers.

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Solid state electronic devices streetman 6th edition pdf

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