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Power Electronics
Report
Dr. Abdallah Mohamed Mohamed
Name : Khaled Omar Mohamed Saleh Mahmoud Shahin
Section : 4 Comparison between BJT, MOSFET, and IGBT
Parameter BJT MOSFET IGBT
Symbol
Type Bipolar Unipolar Hybrid (BJT +
transistor transistor MOSFET) Control Current- Voltage- Voltage- Mechanism controlled controlled controlled (requires base (requires gate (requires gate current) voltage) voltage) Switching Slower Fast switching Moderate Speed switching speed speed switching speed (moderate) Conduction High due to Low due to no Lower than BJT, Losses significant base gate current higher than current MOSFET Switching Moderate to Low switching Lower than BJT, Losses high losses higher than MOSFET Voltage Lower voltage Can handle low Can handle high Handling tolerance (up to to medium voltages (up to 1000V) voltage (up to 1700V) 900V) Current High current Limited current High current Handling carrying capacity capacity capability Power Moderate Suitable for low Suitable for high Handling to medium power Capability power applications Efficiency Lower than Higher Higher efficiency MOSFET and efficiency in in high power IGBT fast switching Thermal Lower thermal Better thermalGood thermal Stability stability stability stability Terminals Emitter, Base, Source, Gate, Emitter, Gate, Collector Drain Collector Advantages - High current - High-speed - High voltage handling switching and current - Simple design - Low gate capabilities - Low cost power - Low switching requirement losses - High input - Combines impedance advantages of BJT and MOSFET Disadvantages - Slow switching - Limited power - Slower than speed handling MOSFET - High base - High on- - Higher cost current resistance - Complexity - More heat generation Applications Low-power Switching Motor drives, amplifiers, regulators, RF inverters, power signal amplifiers, converters, processing, power supplies industrial switching applications circuits