Electronic Devices and Circuits

Bipolar Junction Transistor (BJT)

Lecture 7
(Biasing in BJT Amplifier Circuits)

Prepared By: Muhammad Abdullah

muhammad.abdullah@nu.edu.pk , uetian.09@gmail.com

National University FAST (CFD Campus)

My YouTube Channel:
https://www.youtube.com/@BlueFish506

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Biasing in BJT Amplifier Circuits

The goal of BJT biasing is to establish a stable DC current in the collector, ensuring
predictable behavior despite variations in temperature and transistor 𝛽. Proper
biasing also places the DC bias point in the 𝑖𝐶 − 𝑣𝐶𝐸 plane for maximum output
swing.
Ineffective Biasing Methods:
1. Fixing 𝑉𝐵𝐸 via Voltage Divider: Due to the exponential 𝑖𝐶 − 𝑣𝐵𝐸 relationship,
small 𝑉𝐵𝐸 changes lead to large 𝐼𝐶 and 𝑉𝐶𝐸 variations.

2. Constant Base Current Biasing: Setting 𝐼𝐵 as (𝑉𝐶𝐶 − 0.7)/𝑅𝐵 causes large 𝐼𝐶

and 𝑉𝐶𝐸 variations due to 𝛽 variability among transistors.

These methods are unreliable, so better approaches are discussed for stable biasing.

Figure 1: Two obvious schemes for biasing the BJT: (a) by fixing 𝑽𝑩𝑬 ; (b) by fixing 𝑰𝑩

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The Classical Discrete-Circuit Bias Arrangement
For biasing a BJT with a single power supply, a voltage divider (resistors 𝑅1 and 𝑅2 )
provides the base voltage, and an emitter resistor 𝑅𝐸 stabilizes the emitter current.

Figure 2: Classical biasing for BJTs using a single power supply (a) original circuit; (b)
Equivalent circuit

Thevenin Equivalent Voltage and Resistance:

𝑅2 𝑅1 𝑅2
𝑉𝐵𝐵 = 𝑉𝐶𝐶 ( ) ; 𝑅𝐵 =
𝑅1 + 𝑅2 𝑅1 + 𝑅2
Emitter Current 𝐼𝐸 (from Kirchhoff’s loop):
𝑉𝐵𝐵 − 𝑉𝐵𝐸
𝐼𝐸 =
𝑅𝐸 + 𝑅𝐵 /(𝛽 + 1)
Stability Conditions:
• 𝑉𝐵𝐵 ≫ 𝑉𝐵𝐸
𝑅𝐵
• 𝑅𝐸 ≫
𝛽+1

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Condition 𝑉𝐵𝐵 ≫ 𝑉𝐵𝐸 ensures 𝑉𝐵𝐸 variations have minimal impact, while 𝑅𝐸 ≫
𝑅𝐵 /(𝛽 + 1) makes 𝐼𝐸 insensitive to 𝛽 changes.
Design Trade-offs:
• High 𝑅1 and 𝑅2 : Reduce base current dependency on 𝛽, making base voltage
stable.

• Emitter Resistor 𝑅𝐸 : Provides negative feedback, stabilizing 𝐼𝐸 by decreasing

𝑉𝐵𝐸 if 𝐼𝐸 increases, thus lowering 𝐼𝐶 accordingly.

This arrangement provides stable 𝐼𝐸 and 𝐼𝐶 with minimal impact from temperature
and transistor 𝛽 variations.
Rule of Thumb:

1 1 1
1. Designs for 𝑉𝐵𝐵 about 𝑉𝐶𝐶 , (𝑉𝐶𝐵 or 𝑉𝐶𝐸 ) about 𝑉𝐶𝐶 , and 𝐼𝐶 𝑅𝐶 about 𝑉𝐶𝐶 .
3 3 3

2. Typically one selects 𝑅1 and 𝑅2 such that their current is in the range of 𝐼𝐸 to
0.1𝐼𝐸 .

Example 1

We wish to design the bias network of the amplifier shown in Figure 1 to establish a
current 𝐼𝐸 = 1 mA using a power supply 𝑉𝐶𝐶 = +12 V. The transistor is specified to
have a nominal 𝛽 value of 100.
Solution:

1. Determine 𝑉𝐵 and 𝑉𝐸 :
𝑉𝐶𝐶 12
𝑉𝐵 == =4V
3 3
𝑉𝐸 = 𝑉𝐵 − 𝑉𝐵𝐸 = 4 V − 0.7 V = 3.3 V
2. Calculate 𝑅𝐸 :
𝑉𝐸 3.3 V
𝑅𝐸 = = = 3.3kΩ
𝐼𝐸 1 mA

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 3. Select Voltage Divider Values:
𝐼divider = 0.1𝐼𝐸 = 0.1 × 1 mA = 0.1 mA
𝑉𝐶𝐶 12 V
𝑅1 + 𝑅2 = = = 120kΩ
𝐼divider 0.1 mA
𝑅2
𝑉 = 𝑉𝐵
𝑅1 + 𝑅2 𝐶𝐶
𝑉𝐵 3
𝑅2 = (𝑅1 + 𝑅2 ) = × 120𝑘 = 40 kΩ
𝑉𝐶𝐶 12
𝑅1 = 120𝑘 − 𝑅2 = 120𝑘 − 40𝑘 = 80 kΩ
4. Calculate 𝑅𝐶 :
𝐼𝐶 ≅ 𝐼𝐸 = 1 𝑚𝐴
𝑉𝐶𝐶 − 𝑉𝐶 12 − 8
𝑅𝐶 = = = 4 kΩ
𝐼𝐶 1 mA

Biasing Using a Collector-to-Base Feedback Resistor

Figure 3: (a) A common-emitter transistor amplifier biased by a feedback resistor 𝑹𝑩 (b)

Analysis of the circuit in (a)

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In this biasing method, a resistor 𝑅𝐵 connects the collector to the base, providing
negative feedback to stabilize the bias point in a common-emitter amplifier.
• Circuit Equation: By applying Kirchhoff’s Voltage Law, we get:
𝐼𝐸
𝑉𝐶𝐶 = 𝐼𝐸 𝑅𝐶 + 𝑅 + 𝑉𝐵𝐸
𝛽+1 𝐵
• Emitter Current:
𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝐼𝐸 =
𝑅
𝑅𝐶 + 𝐵
𝛽+1
This arrangement ensures that 𝐼𝐸 is less sensitive to variations in 𝛽, making it more
stable. The feedback resistor 𝑅𝐵 limits the allowable negative swing at the collector,
as given by:
𝐼𝐸
𝑉𝐶𝐵 = 𝐼𝐵 𝑅𝐵 = 𝑅
𝛽+1 𝐵
This method effectively stabilizes the bias point by using feedback.

Example 2

Design the circuit of Figure 3 to obtain a dc emitter current of 1 mA , maximum gain,

and a ±2V signal swing at the collector; that is, design for 𝑉𝐶𝐸 = +2.3 V. Let 𝑉𝐶𝐶 =
10 V and 𝛽 = 100.
Solution:
1. Determine 𝑅𝐶 :
𝑉𝐶𝐶 − 𝑉𝐶𝐸 10 − 2.3
𝑅𝐶 = = = 7.7 kΩ
𝐼𝐸 1 mA

2. Calculate 𝑅𝐵 :

Using the emitter current formula for stability with collector-to-base feedback:

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 𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝐼𝐸 =
𝑅
𝑅𝐶 + 𝐵
𝛽+1
By re-arranging above equation, gives;
𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝑅𝐵 = (𝛽 + 1) − 𝑅𝐶
𝐼𝐸
10 − 0.7
𝑅𝐵 = ( ) 101 − 7.7𝑘 = 939.3𝑘 − 7.7𝑘 = 931.6 kΩ
1m

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