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WFF10N6
WFF 5
10N65
Silicon N-Channel MOSFET

Features
� 10A,650V,RDS(on)(Max 1Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 43nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage(VISO=4000V AC)
� Improved dv/dt capability

General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for AC-DC switching
power supplies,DC-DC power converters,high voltage h-bridge motor
drive PWM.

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain Source Voltage 650 V
Continuous Drain Current(@Tc=25℃) 10* A
ID
Continuous Drain Current(@Tc=100℃) 6.0* A
IDM Drain Current Pulsed (Note1) 40* A

VGS Gate to Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note2) 748 mJ

EAR Repetitive Avalanche Energy (Note1) 15.6 mJ

dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns

Total Power Dissipation(@Tc=25℃) 50 W

PD
Derating Factor above 25℃ 0.4 W/℃

TJ,Tstg Junction and Storage Temperature -55~150 ℃

TL Channel Temperature 300 ℃

*Drain current limited by maximum junction temperature

Thermal Characteristics
Value
Symbol Parameter Units
Min Typ Max
RQJC Thermal Resistance , Junction -to -Case - - 2.5 ℃/W

RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W

Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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WFF10N6
WFF 5
10N65
Electrical Characteristics(Tc=25℃)
Characteristics Symbol Test Condition Min Type Max Unit
Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA

Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V

VDS=600V,VGS=0V - - 10 µA
Drain cut -off current IDSS
VDS=480V,Tc=125℃ 100 µA

Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 650 - - V

Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V

Drain -source ON resistance RDS(ON) VGS=10V,ID=4.75A - 0.84 1.0 Ω

Forward Transconductance gfs VDS=50V,ID=4.75A - 6.4 - S

Input capacitance Ciss VDS=25V, - 1430 -

Reverse transfer capacitance Crss VGS=0V, - 117 - pF

Output capacitance Coss f=1MHz - 2.2 -

Rise time tr VDD=300V, - 46 -

Turn-on time ton ID=10A， - 74 -

Switching time ns
Fall time tf RG=25Ω， - 340 -

Turn-off time toff (Note4,5) - 66 -

Total gate charge(gate-source VDD=480V,

Qg - 43 -
plus gate-drain) VGS=10V,
nC
Gate-source charge Qgs ID=10A - 9 -

Gate-drain("miller") Charge Qgd (Note4,5) - 15 -

Source-Drain Ratings and Characteristics(Ta=25℃)

Characteristics Symbol Test Condition Min Type Max Unit
Continuous drain reverse current IDR - - - 10 A

Pulse drain reverse current IDRP - - - 40 A

Forward voltage(diode) VDSF IDR=10A,VGS=0V - - 1.4 V

Reverse recovery time trr IDR=10A,VGS=0V, - 450 - ns

Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.4 - µC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=14.5mH IAS=9.7A,VDD=90V,RG=25Ω ,Starting TJ=25℃
3.ISD≤10A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution

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WFF10N6
WFF 5
10N65

Fig.1 On-State Characteristics Fig.2 Transfer Current Characteristics

Fig.3 On-Resistance variation Fig.4 Body Diode Forward Voltage

vs Drain Current Variation with Source Current
and Temperature

Fig.5 Maximum Drain Current vs Fig.6 Gate Charge Characteristics

Case Temperature

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WFF10N6
WFF 5
10N65

Fig.7 Maximum Safe Operation Area Fig.8 On-Resistance Variation vs

Junction Temperature

Fig.9 Transient Thermal Response curve

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WFF10N6
WFF 5
10N65

Fig.10 Gate Test circuit & Waveform

Fig.11 Resistive Switching Test Circuit & Waveform

Fig.12 Uncamped Inductive Switching Test Circuit & Waveform

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WFF10N6
WFF 5
10N65

Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform

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WFF10N6
WFF 5
10N65
TO-220 Package Dimension

Unit:mm

7/7
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