Assoc. Prof. Dr.

Feridun AY
feridunay@eskisehir.edu.tr
Course material

Textbooks:
1) Sami Franssila, “Introduction to Microfabrication”,
Wiley, 2010
2) Richard C. Jaeger, “Introduction to Microelectronic
Fabrication: Volume 5 of Modular Series on Solid
State Devices, 2/E”, Prentice Hall, 2001

Supplements:
– Chang Liu, “Foundation of MEMS: International
Edition, 2/E”, Prentice Hall, 2011
– Chenming Hu, Modern Semiconductor Devices for
Integrated Circuits, Prentice Hall, 2010
– Stephen A. Campbell, Fabrication Engineering at the
Micro- and Nanoscale, Oxford Series in Electrical and
Computer Engineering, 2012

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Course GOAL

Goal: To enable students acquire the fundamental skills and knowledge in:
– Cleanroom environment, safety and processing;
– Micrometrology and materials characterization;
– Material properties, crystal Structure and growth of Silicon;
– Thin-film materials and processes: PVD, CVD, PECVD, ALD, metallic
thin films, oxide and nitride thin films, polymer films;
– Advanced thin films;
– Pattern generation and optical lithography;
– Wet, dry and ion beam etching;
– Thermal oxidation;
– Nano and micro-fabrication equipment.

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Course grading
Goal: To enable students acquire the fundamental skills and knowledge for analysis
and design of basic photonic, integrated optical, and optoelectronic devices.

Grading policy:
Assessment method Weight %
Midterm Exam 20

Final Exam 40

Homework Assignments +
40
Presentations
Total: 100

Office Hours: Appointments by email.

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Course web site
http://www.eem.eskisehir.edu.tr/Ders.aspx?dersId=188

Slides password: ITN522-2019-ESTU

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Course schedule
Week Date Topic
1 05 February Introduction and Motivation

2 12 February Cleanroom Environment, Safety and Processing Overview

3 19 February Micrometrology and Materials Characterization

4 26 February Micrometrology and Materials Characterization II

5 05 March Silicon: Material Properties, Crystal Structure, Growth, Wafers

6 12 March Silicon: Growth, Wafers

7 18 -22 March Midterm Exam

Pattern Generation and Optical Lithography: Photomasks as Tools,
8 26 March Lithography Process Flow, Resist Application
Pattern Generation and Optical Lithography: Alignment and Overlay,
9 02 April Exposure
Thin-Film Materials and Processes: Metallic Thin Films, Oxide and
10 09 April
Nitride Thin Films, Polymer Films, Stresses, Coverage
11 16 April Presentations

12 30 April Presentations

13 07 May Presentations

14 15 – 29 May Final Examination

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Cleanroom Environment

 Ultraclean conditions must be maintained during the lithography process.

 Any dust particles on the original substrate or that fall on the substrate during
processing can result in defects in the final resist coating.
 Even if defects occur in only 10% of the chip sites at each mask step, fewer than
50% of the chips will be functional after a seven-mask process is completed.

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Cleanroom Environment

 Vertical laminar-flow hoods in clean rooms are used to prevent particulate

contamination throughout the fabrication process.

 Use filtration to remove particles from the air and are rated by the maximum
number of particles per cubic foot or cubic meter of air.

 Class 100 to the Class 1 facilities now being used for VLSI/ULSI processing. For
comparison, each cubic foot of ordinary room air has several million dust
particles exceeding a size of 0.5 m.

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Cleanroom Environment

Ratings by Class of Effectiveness of Filtration in Clean Rooms

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Cleanroom Environment
Some defects are created by particles. The particle may remain on the wafer and be visible as a short
circuit between lines or a boulder that the upper layers cannot cover, or it may be removed from the
wafer by a clean after blocking an implant or locally disrupting pattern development during a
photolithography step. One estimate suggests that particles are responsible for 75% of the yield loss
[14] in volume manufactured VLSI ICs. Because of the importance of defects on IC yield, facilities pay
strict attention to particle detection, control, and reduction. The facility itself must be designed and
constantly monitored to maintain minimum particle levels in the air. Clean rooms have gone from
class 100 to class 10 and are now class 1 in an effort to reduce contamination. Maintenance of this
level of particle control requires a strict discipline of the clean room occupants. Because of the
success in controlling airborne particles, the emphasis has now largely shifted to reducing particle
counts in the various processes and process equipment. Not only must particle generation be
minimized at the time of purchasing new equipment or developing new processes and when process
equipment is taken offline for maintenance, but the equipment must be particle qualified before it is
returned to service. Periodic particle surveys are also commonly done to ensure that low defect levels
are maintained. There are two common types of particle detection: on the wafer and in the ambient.

Both methods use optical scattering of a laser beam by a particle. On-wafer detection is done by
sending a blank monitor (witness) wafer through the system to be checked. Blank wafers are usually
used in current generation systems to avoid scattering of light by the pattern, which can obscure
particle counts. The witness wafer is measured before and after processing, using a surface particle
counter to determine the number of particles added by the process. Typical surface particle systems
provide particle maps by measuring the scattered light as a function of position by scanning a laser
beam across the surface of a wafer .

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Cleanroom Environment
Read Chapter 35 of Franssila’s book!

Control of:
• Particle contamination (applying overpressure to blow dirt outside)
• Temperature
• Humidity

Main features of cleanrooms are:

• overpressure (50 Pa) for keeping particles outside
• filtered air (99.9995% at 0.15 μm particle size)
• heating/cooling/humidification/drying of incoming air
• laminar (unidirectional) airflow in the working areas
• materials compatibility
• mechanical and electrical interference minimization
• working procedures.

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Cleanroom Environment

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Cleanroom Environment

Newer ISO standards employ units of

particles/m3
(conversion factor: 1m3 = 35.3 ft3).

ISO standard cleanliness Class N with particle concentration Cn

(particles/m3) is calculated from:

The proper way to specify

cleanroom cleanliness is therefore: Class X (at Y m particle size).

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Cleanroom Environment

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Cleanroom Environment

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Cleanroom Environment
35.3 Cleanroom Subsystems

35.3.1 Air

35.3.2 DI water
De-ionized water (DI water, DIW), also
known as ultrapure water (UPW)
A big fab uses a million cubic meters of
ultrapure water a year. Water is purified in a
multistep process that involves many
different techniques, to get rid of many
different impurities (Table 35.4). Coarse
sand and carbon filtering remove larger
particles, while reverse osmosis and ion
exchangers remove salts, and UV treatment
kills bacteria. DI water quality is monitored
by resistivity measurements: 18 Mohm-cm
is required. Regular bacteria checks are also
performed, as well as particle tests.
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Cleanroom Environment
35.4 Environment, Safety and Health
(ESH)

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Homework Assignment
Homework #1: Read Chapter 35 of Franssila’s book!

1. What is the linear air velocity if cleanroom air in exchanged 360 times per hour ?

2. What class cleanroom would be suitable for a) 1 µm and b) for 0.1 µm CMOS
production ?

4. Explain how the factors listed in Table 35.3 affect wafer processing !

5. If a 0.5 liter bottle (under 50 bar pressure) of boron trifluoride (BF3) leaks into a 1000
m2 cleanroom, will it be immediately dangerous to health ?

6. How many particles will deposit on a 200 mm wafer in a ISO class 2 cleanroom in a
hour ?

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