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Ion Implantation

Ion implantation is a technique used to introduce dopant atoms into silicon wafers, providing precise control over dopant density and uniformity, which is crucial for integrated circuit fabrication. The process involves accelerating impurity ions and implanting them into the silicon, followed by an annealing process to restore the crystal structure. Despite being more expensive than traditional diffusion methods, ion implantation is essential for modern VLSI technology due to its controllability and ability to create shallow junctions.

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70 views4 pages

Ion Implantation

Ion implantation is a technique used to introduce dopant atoms into silicon wafers, providing precise control over dopant density and uniformity, which is crucial for integrated circuit fabrication. The process involves accelerating impurity ions and implanting them into the silicon, followed by an annealing process to restore the crystal structure. Despite being more expensive than traditional diffusion methods, ion implantation is essential for modern VLSI technology due to its controllability and ability to create shallow junctions.

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ION IMPLANTATION

Ion Implantation is an alternative to a deposition diffusion and is used to produce a shallow surface
region of dopant atoms deposited into a silicon wafer. This technology has made significant roads into
diffusion technology in several areas. In this process a beam of impurity ions is accelerated to kinetic
energies in the range of several tens of keV and is directed to the surface of the silicon. As the impurity
atoms enter the crystal, they give up their energy to the lattice in collisions and finally come to rest at
some average penetration depth, called the projected range expressed in micro meters. Depending
on the impurity and its implantation energy, the range in a given semiconductor may vary from a few
hundred angstroms to about 1micro meter. Typical distribution profile of impurity along the projected
range is approximately Gaussian. By performing several implantations at different energies, it is
possible to synthesize a desired impurity distribution, for example a uniformly doped region.

Ion Implantation System


A typical ion-implantation system is shown in the figure below.

A gas containing the desired impurity is ionized within the ion source. The ions are generated and
repelled from their source in a diverging beam that is focussed before if passes through a mass
separator that directs only the ions of the desired species through a narrow aperture. A second lens
focuses this resolved beam which then passes through an accelerator that brings the ions to their
required energy before they strike the target and become implanted in the exposed areas of the silicon
wafers. The accelerating voltages may be from 20 kV to as much as 250 kV. In some ion implanters,
the mass separation occurs after the ions are accelerated to high energy. Because the ion beam is
small, means are provided for scanning it uniformly across the wafers. For this purpose the focussed
ion beam is scanned electrostatically over the surface of the wafer in the target chamber.

Repetitive scanning in a raster pattern provides exceptionally uniform doping of the wafer surface. The
target chamber commonly includes automatic wafer handling facilities to speed up the process of
implanting many wafers per hour.
Properties of Ion Implantation
The depth of penetration of any particular type of ion will increase with increasing accelerating voltage.
The penetration depth will generally be in the range of 0.1 to 1.0 micro meters.

Annealing after Implantation


After the ions have been implanted they are lodged principally in interstitial positions in the silicon
crystal structure, and the surface region into which the implantation has taken place will be heavily
damaged by the impact of the high-energy ions. The disarray of silicon atoms in the surface region is
often to the extent that this region is no longer crystalline in structure, but rather amorphous. To restore
this surface region back to a well-ordered crystalline state and to allow the implanted ions to go into
substitutional sites in the crystal structure, the wafer must be subjected to an annealing process. The
annealing process usually involves the heating of the wafers to some elevated temperature for very
small amount of time.

Ion implantation is a substantially more expensive process than conventional deposition diffusion, both
in terms of the cost of the equipment and the throughput, it does, however, offer following advantages.

Advantages of Ion Implantation


Ion implantation provides much more precise control over the density of dopants deposited into the
wafer. This is possible because both the accelerating voltage and the ion beam current are electrically
controlled outside of the apparatus in which the implants occur. Also since the beam current can be
measured accurately during implantation, a precise quantity of impurity can be introduced. This control
over doping level, along with the uniformity of the implant over the wafer surface, make ion implantation
attractive for the IC fabrication, since this causes significant improvement in the quality of an IC.

Due to precise control over doping concentration, it is possible to have very low values of dosage so
that very large values of sheet resistance can be obtained. These high sheet resistance values are
useful for obtaining large-value resistors for ICs. Very low-dosage, low-energy implantations are also
used for the adjustment of the threshold voltage of MOSFET’s and other applications.

An obvious advantage of implantation is that it can be done at relatively low temperatures, this means
that doped layers can be implanted without disturbing previously diffused regions. This means a lesser
tendency for lateral spreading.

Importance of Ion Implantation for VLSI Technology


Ion implantation is a very popular process for VLSI because it provides more precise control of dopants
(as compared to diffusion). With the reduction of device sizes to the submicron range, the electrical
activation of ion-implanted species relies on a rapid thermal annealing technique, resulting in as little
movement of impurity atoms as possible. Thus, diffusion process has become less important than
methods for introducing impurity atoms into silicon for forming very shallow junctions, an important
feature of VLSI circuits. Ion, implantation permits introduction of the dopant in silicon that is
controllable, reproducible and free from undesirable side effects. Over the past few years, ion
implantation has been developed into a very powerful tool for IC fabrication. Its attributes of
controllability and reproducibility make it a very versatile tool, able to follow the trends to finer-scale
devices. Ion implantation continues to find new applications in VLS technologies.
Mathematical Expressions Related to Ion Implantation
Implant dose is given by

 I .t  1
Dose( ) =  B  . ; IB – Ion Beam Current, t – Implantation Time, A – Implanted Area
 q  A

Peak Concentration is given by


CP = ; RP - is straggle length
2 .RP

Doping Concentration Profile is given by

 ( x − RP )2 
C ( x) = CP .exp  − 2 
; RP is Projected Range
 2(RP ) 
Junction Depth is given by

 C 
x j = RP  2.RP ln  P  (Try deriving this expression using the condition that junction forms
  CB 
at a depth (xj) where C(xj) = CB )

Ion Implantation Charts


Tutorial Problems:
Q.1. A 30 KeV implant of Boron is done into bare silicon. The dose is 1012 cm-2.

(a) what is the depth of the peak of the implanted profile?

(b) what is the peak concentration?

(c) what is the concentration at the depth of 0.3 micro meter?

Q.2. A particular silicon device needs to have an implant of Boron with a peak at a depth of 0.3 µm and a
peak concentration of 1017 cm-3. Determine the implant energy and dose that should be used for this
process. Find the as-implanted junction depth if the substrate is n-type with a concentration of 1015 cm-3.
(here as-impanted means “immediately after impantation”)

Q.3. Phosphorus with energy of 100 KeV is implanted into a silicon wafer. What should be the implant
doe if the peak concentration of 1x1017 cm-3 is desired?

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