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Assignment+1+2021-22

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55 views3 pages

Assignment+1+2021-22

Uploaded by

世杰 刘
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BME 6005/8125 Micro System Technology

Assignment 1

Softcopy submitted to Canvas.


Due date: Mar 22, 2022

Reminder: Plagiarism is strictly and seriously monitored. Two or more answer sheets
with significant similarity will result in zero mark for ALL answer sheets, and can even
cause penalty at University level for possible termination of degree work.

1. Scaling.
(a) Considering a spherical particle is moving in a fluid with initial velocity v. The speed
of the particle decreases due to the drag force. Here we define the “stop distance” as the
travel distance until the sphere stops. Given the “stopping distance” can be expressed as
a × Re × D, derive the “a”.
Assumption: ρi = ρs

(b) Based on the equation, the stopping distance is reduced by Lb. What is that “b”?

r = radius of the sphere


Drag = 6𝜋𝜇𝑟𝑣 D = diameter of the sphere
v = velocity of the sphere
v μ = viscosity of the fluid
ρi = density of the fluid
ρs = density of the particle

2. Anisotropic Etching of Single Crystalline Silicon. Please draw the top-view and the side-view
cross-section (the intersects marked by the dashed lines) of the etched profile after long-term
etching. Indicate the orientation angle of each edge appearing from the top-view and the side-
view cross-section.
Note: the intersect is parallel to {100} in (3) and perpendicular to {100} in (4)
(1) {110} (2)

<100> Wafer
0.2 L 0.2 L

0.2 L

L L

0.2 L L

(3)
{111} (4)

{100} <110> Wafer


0.2 L 0.2 L

0.2 L

a b
L L

a b
3. Process flow. The schematic of a comb drive combining surface micromachining and
bulk micromachining is shown below. Please start with a SOI wafer and design the step-
by-step process flow. Please indicate details of each step, including UV exposure
method (type of photoresist used, contact, proximity, or projection exposure), thin film
deposition (PECVD, LPCVD, or others.) and etching method (chemical used in wet
etching, RIE etching or others), and explain why this method was chosen.

55°

Single Crystal Si SiO2

Silicon Nitride Aluminum

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