NANENG 520_05_Advanced Devices_Basic MOSFET
NANENG 520_05_Advanced Devices_Basic MOSFET
By
Wael Fikry
Professor of Solid State Electronics
Eng. Physics Dept. – Faculty of Engineering
waelfikry@yahoo.com
Room 223
• MOS Capacitor
• Basic MOSFET
Long Channel Characteristics
MOSFET Mobility
Threshold Voltage and Ion Implantation
MOSFET Small Signal Equivalent Circuit
• Energy-Band Diagram
• Regions of Operation
Linear
saturation
Subthreshold
• Subthreshold Swing
W
I d = Cox n (Vg − Vth )Vd − 12 Vd2 (1) Simplified mostly used for digital design
L
• In the above derivation, it has been assumed that Vth is independent of , this is
only valid for small values of Vd. In case of large Vd, Vth depends on as it
affects QB. Without such assumption, the drain current becomes:
Vg = -12 V
I d = n Cox (Vg − ms − 2 B + ox − d )Vd
W Q V Eq.(1)
L Cox 2
(2)
Id (mA)
Eq.(2)
2 2q si N a
− [(Vd + 2 B )3/ 2 − (2 B )3/ 2 ] Eq.(1)
3 Cox
Vg = -8 V
Vd (V)
– Where Vdsat is the “Drain Saturation Voltage” which is equal to at the drain end
of the channel. Substituting the above expression into the approximate Id-Vd
relationship yields:
nCoxW
I dsat = (Vg − Vth )2
2L
– This eqn is valid at the onset of saturation, beyond that, Id saturates at a constant
value. Therefore, this eqn also predicts Id for higher Vd values.
C (V −V ) V
W
I d
= ox g th d
L
2- Saturation Region
The well known quadratic relation
W C (V − V )
2
=
ox g th
I dsat
2L
Subthreshold Swing
dV g
S=
d log( I d )
KT C d _ max +C it
= ln(10) 1+ Slope = 1/S
q C ox
Cit interface charge capacitance
Insensitive to device parameter
1.E-03
The above equation leads to 1.2
Vd = 1V
1.E-04
2
kT
C ox 1−e−qV d / kT
W 1
Id = 1.E-05
L q
eq(V g − V th ) / kT
0.8
1.E-06
Id(mA)
Id(A)
Vd = .5V
1.E-07
0.6
q (V g − V th ) / KT 0.4
I d e 1.E-09
I d = C ox (V g − V t )V d0.2
W
1.E-10 L
Independent of Vd
1.E-11 0
0 0.5 1 1.5 2
Vg(v)
inversion Layer
q
A=
q
=
Q
s s
From Gauss’s law .d A =
y
si o y
si o
QB Qinv + QB
Qinv si o si o
Qy Ey
x
y
QB
y y
=
(Q B
+ Q inv
) where = 1/2 for electron
eff
si o
= 1/3 for holes
=
(Q B
+ Q inv
) where = 1/2 for electron
eff
si o
= 1/3 for holes
In strong inversion
Qinv = C ox (V g − V th ) QB
C ox
= ox o
V th = V FB + 2 B −
T ox C ox
(elec.) =
(V th
+ V FB + 2
B
) + (V g
− V th )
eff
3T ox 6T ox
(elec.) =
(V +V ) g th strong inversion
eff
6T ox only
1 T 2
Surface roughness scattering Coulomb scattering
=T ( Q + Q )
ph
T
T Q
2
I
NI c
−1
inv
Mobility
interface introduces additional
High
scattering mechanisms like Coulomb Total Temperature
Mobility
scattering from oxide charges and
interface states as well as the surface =
(Q B
+ Q inv
)
eff
roughness scattering. si
eff (cm2/V-s)
eff / B
y
(V g −V t ) & x
V d/L
<100> Si
• MOSFET (Effective) mobility due NA = 1015 cm-3
B = 1500 cm2/V-s
to the vertical and lateral fields can
be expressed as: y(V/cm)
eff = 1 +
O
(V g − V t ) 1 + x
c Mobility Verses Vertical Field
eff (V/cm)
=
( Q B
+ Q inv
)
eff
si o
Theoretical
Surface roughness scattering
Screening effect
Experimental
eff (V/cm)
( )
12
V th
=V FB
+ 2 + 2 −V bs 10
B B
8 Vbs = 0V
ID (mA)
coefficient -2V
4 -3V
2 si o q N A 2
= 0
C ox 0.5 1 1.5
Vg (V)
2 2.5 3
2 si o q N A
=
C ox
( Eo)
eff v
1+ eff
where Eo and v are parameters for electrons and holes
• The above power function expression is not suitable for circuit simulation.
• Using Taylor expansion and introducing new term to include high body bias
will lead to
o
eff =
(V g + V th)
2
1 + (U a + U cV bs )
V g + V th +Ub
T ox
T ox
where Ua, Ub and Uc are parameters to be determined from I-V data
mobMod=1
o
eff =
V gsteff + 2V th V gsteff + 2V th
2
1 + (U a + U c V bseff ) + Ub
T ox T ox
When ac drain voltage (vd) and gate voltage (vg) are superimposed on the dc voltages
(Vd, Vg), the drain current modified to id + Id where id is the ac component.
Vg Vd
vg gmvg rds=1/gd
or i d
= g v d
+ g v g
d m
gm is the transconductance
g m (linear ) = I d g m (saturation ) = I d
V g V g
=
W
( ) =
W
C (V −V )
2
C V −V V
V g L ox g th d
V g 2L ox g th
= W C ox V d = W C ox (V −V ) g th
L L
g d (linear ) = I d g d (saturation ) = I d
V d V d
=
( ) =
( )
2
W W
C V −V V C V −V
V d L ox g th d
V d 2L ox g th
=W C ox (V g −V th )
= Zero
L
Overlap Capacitors
gmvg
Substrate to Source
and Substrate to p-n junction depletion
Drain Resistances Gate to Source and Gate
to Drain capacitances capacitances
• This frequency is much larger than the typical maximum frequency response of a MOSFET.
• The transit time of carriers through the channel is usually not the limiting factor in the
frequency responses of MOSFETs
• This frequency is much larger than the typical maximum frequency response of a MOSFET.
• The transit time of carriers through the channel is usually not the limiting factor in the
frequency responses of MOSFETs
I i = j C GSTV g Id = g mV g
Id gm (V g −V th )
At cutoff frequency = =1 fT = (saturation )
Ii 2 f T C GST 2 L2
V th ( y) = V th (0) − aV ( y) G
id
D
vg gmvg rds=1/gd RL
Vox
n+ Vgs
s p
VVgsgs= Vth
V gs =V FB +V ox + s
@ Vgs =Vth
QB = qN a X dm = 2 si o qN A ( 2 B )
QB
V ox = = 2 B 2kT N A
C ox s = 2 B = ln
kT N A N D
q ni
bi =
q ni2
ln
V gs =V FB + 2 B + 2 B
+
Vbs
-
VVgsgs
VVgsgs
V gs −V bs =V FB +V ox + s
s
s 22 B
B
Q = qNV X
B
bs
a
bi
dm
= 2 si o qN a ( 2 B − Vbs )
QB
V ox = = ( 2 B −V bs )
C ox
QB
V th −V bs =V FB +
C ox
+ 2 B −V bs V th =V FB + 2 B + ( 2 B −V bs )
Xdm Xdm
QB QB
Qinv Qinv
q V bs
Qinv
• Almost all of the increase of Qs beyond
s = 2B is taken by Qinv with a slope
dQinv/dVg Cox