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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
 DATA SHEET
www.onsemi.com

MOSFET – N-Channel, UniFETt

500 V, 28 A, 155 mW

FDA28N50 G
D
S
Description
UniFET MOSFET is onsemi’s high voltage MOSFET family based
TO−3P−3L
on planar stripe and DMOS technology. This MOSFET is tailored to CASE 340BZ
reduce on−state resistance, and to provide better switching
performance and higher avalanche energy strength. This device family
is suitable for switching power converter applications such as power D
factor correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.

Features
• RDS(on) = 122 mW (Typ.) @ VGS = 10 V, ID = 14 A G

• Low Gate Charge (Typ. 80 nC)

• Low Crss (Typ. 42 pF)
S
• 100% Avalanche Tested
• This Device is Pb−Free Halide, Free and RoHS Compliant MARKING DIAGRAM

Applications
• PDP TV
• Uninterruptible Power Supply FDA
• AC−DC Power Supply 28N50
AYWWZZ

MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)

Symbol Parameter Value Unit
VDSS Drain to Source Voltage 500 V
FDA28N50 = Specific Device Code
VGSS Gate to Source Voltage ±30 V A = Assembly Location
YWW = Date Code (Year and Week)
ID Drain Current A
ZZ = Assembly Lot Code
− Continuous (TC = 25°C) 28
− Continuous (TC = 100°C) 17
IDM Drain Current − Pulsed (Note 1) 112 A ORDERING INFORMATION
EAS Single Pulsed Avalanche Energy (Note 2) 2391 mJ Device Package Shipping†
IAR Avalanche Current (Note 1) 28 A FDA28N50 TO−3P−3L 450
EAR Repetitive Avalanche Energy (Note 1) 31 mJ (Pb−Free) Units / Tube

dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns †For information on tape and reel specifications,
including part orientation and tape sizes, please
PD Power Dissipation refer to our Tape and Reel Packaging Specifications
− (TC = 25°C) 310 W Brochure, BRD8011/D.
− Derate Above 25°C 2.5 W/°C

TJ,TSTG Operating and Storage Temperature −55 to +175 °C

Range

TL Maximum Lead Temperature for 300 °C

Soldering Purposes, 1/8” from case for
5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

February, 2024 − Rev 3 FDA28N50/D
 FDA28N50

THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RθJC Thermal Resistance, Junction to Case, Max 0.4 °C/W
RθJA Thermal Resistance, Junction to Ambient, Max. 40

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain−Source Breakdown Voltage ID = 250 mA, VGS = 0 V, TJ = 25°C 500 − − V
DBV DSS Breakdown Voltage Temperature ID = 250 mA, Referenced to 25°C − 0.59 − V/°C
DT J Coefficient

IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V − − 1 mA

VDS = 400 V, TC = 125°C − − 10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA 3.0 − 5.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 14 A − 0.122 0.155 W
gFS Forward Transconductance VDS = 20 V, ID = 14 A − 34 − S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz − 3866 5140 pF
Coss Output Capacitance − 576 766 pF
Crss Reverse Transfer Capacitance − 42 63 pF
Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID = 28 A, − 80 105 nC
VGS = 10 V (Note 4)
Qgs Gate to Source Gate Charge − 21 − nC
Qgd Gate to Drain “Miller” Charge − 32 − nC
Switching Characteristics
td(on) Turn−On Delay Time VDD = 250 V, ID = 28 A, − 56 122 ns
VGS = 10 V RG = 25 Ω (Note 4)
tr Turn−On Rise Time − 126 262 ns
td(off) Turn−Off Delay Time − 210 430 ns
tf Turn−Off Fall Time − 110 230 ns
Drain−Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current − − 28 A
ISM Maximum Pulsed Drain to Source Diode Forward Current − − 112 A
VSD Drain−Source Diode Forward Voltage VGS = 0 V, ISD = 20 A − − 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 20 A, − 530 − ns
dIF/dt = 100 A/ms
Qrr Reverse Recovery Charge − 8 − mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:
1. Repetitive Rating: Pulse−width limited by maximum junction temperature.
2. L = 6.1 mH, IAS = 28 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 28 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical Characteristics.

www.onsemi.com
2
 FDA28N50

TYPICAL CHARACTERISTICS
100 200
VGS = 15.0 V
10.0 V
8.0 V 100
7.0 V
6.5 V
6.0 V
ID, Drain Current (A)

ID, Drain Current (A)

5.5 V

150°C

10 −55°C
10

25°C
*Notes: *Notes:
1. 250 ms Pulse Test 1. VDS = 20 V
2. TC = 25°C 2. 250 ms Pulse Test
1 1
0.2 1 10 20 4 5 6 7 8
VDS, Drain−Source Voltage (V) VGS, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.25 200

100
IS, Reverse Drain Current (A)
Source On−Resistance (W)

0.20
RDS(on), Drain −

150°C
25°C
VGS = 10 V 10
0.15
VGS = 20 V
*Notes:
1. VGS = 0 V
2. 250 ms Pulse Test
*Note: TJ = 25°C
0.10 1
0 25 50 75 100 0.2 0.6 1.0 1.4
ID, Drain Current (A) VSD, Source−Drain Voltage (V)
Figure 3. On−Resistance Variation vs
Figure 4. Body Diode Forward Voltage Variation
Drain Current and Gate Voltage
vs Source Current and Temperature
8000 10
Ciss = Cgs + Cgd (Cds = shorted) VDS = 100 V
VGS, Gate−Source Voltage (V)

Coss = Cds + Cgd VDS = 250 V

Crss = Cgd 8
6000 VDS = 400 V
*Notes:
Capacitance (pF)

1. VGS = 0 V
Ciss 2. f = 1 MHz 6
4000
Coss
4

2000 *Note: ID = 96 A
2
Crss

0 0
0.1 1 10 30 0 20 40 60 80 90

VDS, Drain−Source Voltage (V) Qg, Total Gate Charge (nC)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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3
 FDA28N50

TYPICAL CHARACTERISTICS (CONTINUED)

1.2 3.0
Drain−Source Breakdown Voltage

Drain−Source On−Resistance
2.5
1.1

RDS(on), [Normalized]
BVDSS, [Normalized]

2.0

1.0 1.5

1.0
0.96 *Notes: *Notes:
1. VGS = 0 V 0.5 1. VGS = 10 V
2. ID = 250 mA 2. ID = 14 A
0.8 0.0
−75 −25 25 75 125 175 −75 −25 25 75 125 175
TJ, Junction Temperature (5C) TJ, Junction Temperature (5C)
Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On−Resistance Variation vs Temperature

300 28
60 ms
100
100 ms
1 ms
ID, Drain Current (A) 21
ID, Drain Current (A)

10 10 ms
DC
Operation in This Area
is Limited by RDS(on) 14
1

0.1 *NOTES: 7
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0.01 0
1 10 100 1000 25 50 75 100 125 150

VDS, Drain−Source Voltage (V) TC, Case Temperature (5C)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

1
ZqJC(t), Thermal Response (5C/W)

0.5

0.2
0.1
0.1
0.05
*NOTES: P DM
0.02 1. ZqJC (t) = 0.4°C/W Max.
0.01 2. Duty Factor, D= t1/t2 t1
0.01
3. TJM − TC = PDM * ZqJC (t) t2

SINGLE PULSE

1E−3
10−5 10−4 10−3 10−2 10−1 1 10

t1, Rectangular Pulse Duration (s)

Figure 11. Transient Thermal Response Curve

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4
 FDA28N50

VGS

RL
Qg

VDS
VGS Qgs Qgd

DUT
IG = const.

Charge

Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
VGS DUT
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1
VDS EAS = LI AS2
2

BVDSS
ID
IAS
RG
VDD ID (t)

VGS DUT VDD VDS (t)

tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

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5
 FDA28N50

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS S dv/dt controlled by RG

S ISD controlled by pulse period

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
(Driver)

IFM , Body Diode Forward Current

I SD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

UniFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.

www.onsemi.com
6
 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−3P−3LD / EIAJ SC−65, ISOLATED

CASE 340BZ
ISSUE O
DATE 31 OCT 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13862G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−3P−3LD / EIAJ SC−65, ISOLATED PAGE 1 OF 1

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2016 www.onsemi.com

 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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