DATA SHEET

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MOSFET – N-Channel,
UniFETE
300 V, 59 A, 56 mW

FDA59N30
TO−3P−3LD / EIAJ SC−65, ISOLATED
Description CASE 340BZ
UniFETt MOSFET is onsemi’s high voltage MOSFET family
based on planar stripe and DMOS technology. This MOSFET is N−CHANNEL MOSFET
tailored to reduce on−state resistance, and to provide better switching
performance and higher avalanche energy strength. This device family D
is suitable for switching power converter applications such as power
factor correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
G
Features
• RDS(on) = 47 mW (Typ.) @ VGS = 10 V, ID = 29.5 A S
• Low Gate Charge (Typ. 77 nC)
• Low Crss (Typ. 80 pF) MARKING DIAGRAM
• 100% Avalanche Tested
FDA
Applications 59N30
• PDP TV AYWWZZ
• Uninterruptible Power Supply
• AC−DC Power Supply
FDA59N30 = Specific Device Code
A = Assembly Location
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) YWW = Date Code (Year and Week)
Symbol Parameter Value Unit ZZ = Assembly Lot

VDSS Drain−Source Voltage 300 V

ID Drain Current − Continuous (TC = 25°C) 59 A ORDERING INFORMATION
− Continuous (TC = 100°C) 35 A

IDM Drain Current − Pulsed (Note 1) 236 A Device Package Shipping

VGSS Gate−Source Voltage ±30 V FDA59N30 TO−3P−3L 450 Units /

(Pb−Free) Tube
EAS Single Pulsed Avalanche Energy (Note 2) 1734 mJ
IAR Avalanche Current (Note 1) 59 A
EAR Repetitive Avalanche Energy (Note 1) 50 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power (TC = 25°C) 500 W
Dissipation − Derate Above 25°C 4 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to °C

+150

TL Maximum Lead Temperature for Soldering, 300 °C

1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

February, 2024 − Rev. 3 FDA59N30/D
 FDA59N30

THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction−to−Case, Max. 0.25 °C/W
RqJA Thermal Resistance, Junction−to−Ambient, Max. 40 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA 300 − − V
DBVDSS Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 0.3 − V/°C
/ DTJ
IDSS Zero Gate Voltage Drain Current VDS = 300 V, VGS = 0 V − − 1 mA
VDS = 240 V, TC = 125°C − − 10 mA
IGSSF Gate−Body Leakage Current, Forward VGS = 30 V, VDS = 0 V − − 100 nA
IGSSR Gate−Body Leakage Current, Reverse VGS = −30 V, VDS = 0V − − −100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 3.0 − 5.0 V
RDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 29.5 A − 0.047 0.056 W
gFS Forward Transconductance VDS = 40 V, ID = 29.5 A − 52 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz − 3590 4670 pF
Coss Output Capacitance − 710 920 pF
Crss Reverse Transfer Capacitance − 80 120 pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time VDD = 150 V, ID = 59 A, − 140 290 ns
VGS = 10 V, RG = 25 W (Note 4)
tr Turn−On Rise Time − 575 1160 ns
td(off) Turn−Off Delay Time − 120 250 ns
tf Turn−Off Fall Time − 200 410 ns
Qg Total Gate Charge VDS = 240 V, ID = 59 A, VGS = 10 V − 77 100 nC
(Note 4)
Qgs Gate−Source Charge − 22 − nC
Qgd Gate−Drain Charge − 40 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current − − 59 A
ISM Maximum Pulsed Drain−Source Diode Forward Current − − 236 A
VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 59 A − − 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 59 A, − 246 − ns
dIF/dt = 100 A/ms
Qrr Reverse Recovery Charge − 6.9 − mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. L = 0.83 mH, IAS = 59 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 59 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.

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 FDA59N30

TYPICAL PERFORMANCE CHARACTERISTICS

VGS
Top: 15.0 V
102 10.0 V
102

ID, Drain Current (A)

ID, Drain Current (A)

8.0 V
7.0 V
6.5 V *Notes:
6.0 V 150°C
1. VDS = 40 V
Bottom: 5.5 V
*Notes: 25°C 2. 250 ms Pulse Test
101 101
1. 250 ms Pulse Test
2. TC = 25°C −55°C

100 100
10−1 100 101 2 4 6 8 10 12
VDS, Drain−Source Voltage (V) VGS, Gate−Source Voltage (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), Drain−Source On−Resistance (W)

0.12

IDR, Reverse Drain Current (A)

0.11
102
0.10

0.09 150°C

0.08 25°C
VGS = 10 V 101
0.07
VGS = 20 V
0.06 *Notes:
1. VGS = 0 V
0.05 *Note: TJ = 25°C 2. 250 ms Pulse Test
0.04 100
0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ID, Drain Current (A) VSD, Source−Drain Voltage (V)

Figure 3. On−Resistance Variation vs. Drain Figure 4. Body Diode Forward Voltage
Current and Gate Voltage Variation vs. Source Current and Temperature

9000 12
Ciss = Cgs + Cgd (Cds = shorted) VDS = 60 V
Coss = Cds + Cgd
10 VDS = 150 V
VGS, Gate−Source Voltage (V)

Coss Crss = Cgd

VDS = 240V
Capacitance (pF)

6000 8
Ciss

*Notes: 6
1. VGS = 0 V
3000 2. f = 1 MHz 4
*Note: ID = 59 A
Crss 2

0 0
10−1 100 101 0 10 20 30 40 50 60 70 80

VDS, Drain−Source Voltage (V) QG, Total Gate Charge (nC)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 FDA59N30

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

1.2 3.0
Drain−Source Breakdown Voltage

2.5

Drain−Source On−Resistance
1.1

RDS(ON), (Normalized)
BVDSS, (Normalized)

2.0

1.0 1.5

*Notes: 1.0
*Notes:
0.9 1. VGS = 0 V
1. VGS = 10 V
2. ID = 250 mA 0.5 2. ID = 29.5 A

0.8 0.0
−100 −50 0 50 100 150 200 −100 −50 0 50 100 150 200

TJ, Junction Temperature (5C) TJ, Junction Temperature (5C)

Figure 7. Breakdown Voltage Variation Figure 8. On−Resistance Variation

vs. Temperature vs. Temperature

103 70

10 ms 60
102 100 ms
1 ms
ID, Drain Current (A)

ID, Drain Current (A)

50
10 ms
101 DC 40
Operation in This Area is
Limited by RDS(on) 100 ms 30
100

*Note: 20
10−1 1. TC = 25°C
2. TJ = 150°C 10
3. Single Pulse
10−2 0
100 101 102 25 50 75 100 125 150

VDS, Drain−Source Voltage (V) TC, Case Temperature (5C)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case
Temperature
ZqJC(t), Thermal Response (5C/W)

D = 0.5
10−1 Notes:
0.2 1. ZqJC(t) = 0.25°C/W Max.
2. Duty Factor, D = t1 / t2
0.1 3. TJM − TC = PDM x ZqJC(t)

0.05
PDM
10−2 0.02
0.01 t1
Single Pulse
t2

10−5 10−4 10−3 10−2 10−1 100 101

t1, Rectangular Pulse Duration (s)

Figure 11. Transient Thermal Response Curve

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 FDA59N30

VGS
Same Type
50KW
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge
Figure 12. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V DUT
GS
td(on) tr td(off)
tf
t on t off

Figure 13. Resistive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = LI AS2
2 BVDSS −VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS DUT VDD VDS (t)
tp
tp Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

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 FDA59N30

DUT +

VDS

I SD
L

RG
Same Type
as DUT VDD

VGS Sdv/dt controlled by R G

SISD controlled by pulse period

Gate Pulse Width

VGS D=
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recoverydv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

UniFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.

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 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−3P−3LD / EIAJ SC−65, ISOLATED

CASE 340BZ
ISSUE O
DATE 31 OCT 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13862G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−3P−3LD / EIAJ SC−65, ISOLATED PAGE 1 OF 1

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