Original PhotonicsEurope2006 - Punke
Original PhotonicsEurope2006 - Punke
Original PhotonicsEurope2006 - Punke
1. INTRODUCTION
Optoelectronic components based on organic semiconductors are opening new possibilities for a great diversity of systems and applications. There is a wide range of organic semiconductor devices. Light emitters, photodiodes, solar cells, transistors as well as organic lasers have been demonstrated. The versatility of organic components and their application in integrated systems attract much attention for this class of materials. Organic light-emitting diodes (OLEDs) are already having a significant impact on the display market. Their features, such as low energy consumption, full colours and a wide viewing angle render them ideal for small consumer electronics devices, e.g. MP3-players. Electronic circuits based on organic semiconductors will have a big impact. Radio frequency identification (RFID) tags will be used for low cost electronic tagging. Photodetectors based on organic materials are heavily investigated in the field of photovoltaics. Organic solar cells prepared by low cost processes are expected to bring down the costs for solar electricity. Efficiencies of more than five percent have recently been demonstrated. This progress closes the efficiency gap to amorphous silicon solar cells being on the market. The integration of organic semiconductors into micro-optical systems has not been in the main focus of research so far. The combination of different organic devices for integrated systems, however, promises completely new products or an improvement of existing systems. The ease of processing and the possibility to deposit these devices basically on any substrate render organic semiconductors attractive for integrated systems in data communication and sensing application.
Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, edited by H. Thienpont, M. R. Taghizadeh, P. Van Daele, J. Mohr, Proc. of SPIE Vol. 6185 618505, (2006) 0277-786X/06/$15 doi: 10.1117/12.673849 Proc. of SPIE Vol. 6185 618505-1
2. APPLICATIONS
Here we address two of the basic applications for integrated organic semiconductor devices, namely optical interconnects and lab-on-a-chip devices
Light source
Modulation
Waveguide
Detector
detection chamber or in a more complex microfluidic system that provides the transport into the detection chamber. The resulting optical signal is then monitored by the detector. Photomultiplier tubes and semiconductor photodiodes are the most common choice on the detector side. The use of organic devices in lab-on-a-chip platforms promises completely integrated systems containing all necessary components for an analysis. A monolithical integration of OLEDs and OPDs with polymeric waveguides and microfluidic systems on a single substrate would open the way to smaller and cheaper sensor systems. Organic devices can be fabricated on a broad range of substrates including materials often used in microsystems e.g. glass, polydimethylesiloxane (PDMS), polymethylmethacrylate (PMMA) and other plastic materials.
Free space
Absorption
Light source
Analyte
Detector
Microfluidics
Fig. 2: Parts of an optical sensor system.
3. ORGANIC DEVICES
In the following section the fabrication and characterisation of different organic light emitting diodes as well as organic photodiodes is described.
3.1.1 Fabrication of OLEDs The OLEDs were fabricated on indium tin oxide (ITO) glass substrates. The ITO substrates were cleaned by ultrasonication in acetone and isopropyl alcohol and cleaned subsequently in an oxygen plasma chamber. Hole transporting layers were triphenyl diamine (TPD) derivatives for the small molecule devices and poly(3,4-ethylenedioxythiophene)poly (stryrenesulfonate) (PEDOT:PSS) for the polymer OLEDs, respectively. High vacuum thermal evaporation was used for deposition of the small molecule materials tris-(8-hydroxyquinoline)aluminum (Alq3) (undoped and doped with the laser dye (4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)4H-pyran) (DCM)). The active layers of the polymer OLEDs are a polyfluorene-derivative (poly(9,9-dioctylfluorenyl2,7-diyl) end capped with N,N-Bis(4-methylphenyl)-aniline) (Sigma-Aldrich PF6/2am4)) as well as a PPV-derivative (poly[2-methoxy-5(3,7dimethyloctyloxy)-1,4-phenylenvinylen] (Covion PDO 121)). These materials were deposited by spin coating in an inert gas atmosphere. In both cases the cathode materials were thermally evaporated onto the organic layers. In figures 3 and 4 the layer configuration and thicknesses of the devices are shown.
Ca/Al cathode (100 nm) Alq3:DCM (40 nm) TPD (25 nm) ITO anode (125 nm) Glass substrate
m
0" 0
Ca/Al cathode (100 nm) Polyfluorene (120 nm) Pedot:PSS (40 nm) ITO anode (125 nm) Glass substrate
Fig. 3: Alq3:DCM-OLED scheme and chemical structure of the molecules (top:Alq3; bottom: DCM).
scheme
and
chemical
3.1.2 Characterisation The devices were tested using a computer controlled characterisation system. This system consists of an automated rotation stage with sample holder, a fibre optic spectrometer (StellarNet EPP2000) and a source measurement unit (Keithley SMU 238). The setup was calibrated using a standard of spectral irradiance (1000 W FEL type) and is providing accurate spectroradiometric and photometric quantities. For sensor applications the total radiant flux (Watts), the radiant exitance (Watts/m) and the emission spectra of the OLEDs are the most relevant quantities. The spectral characteristics of the different OLEDs are shown in Fig. 5. All OLEDs show the characteristic broad spectra of organic emitter materials. Similarly to the case of dye lasers the whole visible range can be covered with different materials. As a blue emitter we choose polyfluorene with an emission maximum at approx. 420 nm. The green emitter is undoped Alq3 that exhibits an emission maximum at a wavelength of 520 nm. For the orange part of the spectrum, OLEDs based on the polymer PDO 121 can be used while a deeper red is generated in devices using the small molecule Alq3 doped with the laser dye DCM as the emissive guest material.
Polyfluorene
A1q3
PDO 121
0.8
-----A1q3:DCM
Li
0.6
('3
>
U)
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0.0
400
500
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700
800
Wavelength I nm
3.1.3 Dynamic response For the application in optical interconnects as well as in sensor systems the dynamic response of an OLED is of crucial importance. A dynamic characterisation of a polyfluorene OLED has been carried out. The OLED was fabricated as described in section 3.1.1. with a smaller active size (approx. 1 mm) in order to reduce the capacitance of the device. Patterning of the OLED was realized by depositing an insulating SiO2 layer through a shadow mask between the ITO anode and the hole transport layer. The OLED was driven by a signal generator (Wavetek Model 801) with square pulses at different modulation frequencies. The resulting optical signal was detected using a Si-PIN photodiode (Thorlabs DET 210) and monitored by a digital sampling oscilloscope (Welleman Instruments PC scope). Figure 6 depicts the modulation characteristics of the OLED when a 100 kHz square pulse train (Input voltage: 15 V) is applied. By applying a forward bias voltage in the order of the turn-on voltage of the OLED the dynamic response can be improved. In Fig. 7 the modulation of the OLED with an applied bias voltage of 5 V is shown. The OLED follows the modulation frequency up to 300 kHz. We also analyzed the dynamic behaviour of an Alq3:DCM-OLED. As shown in figure 8 we could obtain a modulation frequency of up to 1 MHz. The thinner active layers in small-molecule OLEDs are resulting in smaller carrier transit times thus allowing a faster modulation.
Ni
Voltage I V
N)
Voltage!
01
01
Fig. 6: Modulation of a polyfluorene-OLED with 100 kHz pulses from a signal generator.
Ni
01
O)
Fig. 7: Modulation of an polyfluorene-OLED with 158 kHz at an applied bias voltage of 5V.
Voltage I V
01
0)
0) (0
0)
Fig. 8: Modulation of an Alq3:DCM-OLED at 1 MHz (Bias voltage OLED: 7.4 V, Bias voltage Detector: 4.8 V).
3.2.Organic photodiodes
Another important part in optical interconnects and sensor systems is the photodetection. We investigated the composite system made of the conjugated poly-(3-hexylthiophene) (P3HT) and the fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) for the use as organic photodetectors.
(0
()
Ni
01
Th
01
01
3.2.1 Fabrication A scheme of the organic photodiodes is shown in Fig. 9. On top of cleaned glass substrates an ITO anode was deposited by a sputtering process in a commercial deposition system (Leybold Univex 350). The ITO films showed a good transmission rate (more then 85 %) and a sheet resistance in the order of 200 Ohms/Square without an annealing process. The active size (approx. 1 mm) of the OPD was again defined by an intermediate layer made from insulating SiO2 between ITO and the spin-coated hole transport layer (HC Starck PEDOT:PSS). The photon-absorbing layer is a blend of P3HT and PCBM with a weight ratio of 1:0.9. The polymer P3HT acts as an electron donor upon incident light, while the fullerene derivative PCBM is the electron acceptor. This enables an effective charge carrier separation. Finally, an Al electrode (thickness 100 nm) was thermally evaporated onto the organic layer. The absorption spectrum of the active materials is shown in figure 10. In the visible the absorption is dominated by P3HT.
P3HT:PCBM (300 nm) Pedot:PSS (40 nm) ITO anode (125 nm)
-d
Glass substrate
('3
0 0
Me
Fig. 9: Device structure of the OPD and chemical structure of the active materials (top: P3HT; bottom: PCBM)
350
400
450
500
550
600
650
700
Wavelength I nm
3.2.2 Characterisation For the dynamic characterisation of the OPDs pulsed inorganic LEDs with a peak emission wavelength of 466 nm were used as illumination sources. The LEDs were modulated by a frequency generator (Wavetek Model 801). The dependence of the photoresponse on applied bias voltages was also investigated. In figure 11 the I-V-characteristics of the OPD in the dark state and under illumination with a simulated solar spectrum are demonstrated. The device shows a very low dark current in the reverse bias region and a good photo-response under illumination.
-20
-1.0
-0.5
0.0
0.5
1.0
Voltage I V
Fig. 11: I-V-characteristics of the OPD in dark condition and under illumination.
0)
10
Voltage I V
C)
5
D
>
Co
Ni
-3dB
-10
C
a)
0 -15
10
100
Frequency! kHz
Fig.13: Dependence of the output intensity vs. the illumination frequency and bias voltage
The photoresponse of the OPD under pulsed optical illumination is presented in figure 12. The device shows a good response to the 20 kHz input modulation. The dependence of the photoresponse with different applied bias voltages is shown in figure 13. The device reaches a 3dB cut-off frequency of 17 kHz without an applied bias. A reverse voltage of -0.6 V is improving the response thus enabling the detection of modulated signals of up to 50 kHz. A further improvement of the dynamic response should be possible with even smaller active areas and hence reduced capacitances. Alternatively, lateral organic photodiodes with extremely short electrode spacing might lead to shorter response times [13].
4. SYSTEMS
The following section will give an overview of realized example systems comprising organic optoelectronic devices. In the first part an optical interconnect consisting of an OLED, a polymeric optical fibre (POF) and an OPD is demonstrated. In the second part the issue of organic semiconductor lasers coupled to waveguides is addressed.
POF
OLED
OPD
Fig. 14: Image and scheme of the experimental setup for an optical interconnect using only organic active components
Fig. 15: Response of the OLED-OPD system with an applied input modulation
Voltage I V Ni C C
5.1 PMMA-based single-mode waveguides For an all-integrated device we fabricated waveguides based on the material PMMA [28]. This material is commonly used in micro-optics and micro-fluidics. It is transparent in the visible and infrared region, it is biocompatible and it can also be shaped by processes like hot embossing [29]. Another unique feature is the possibility of directly inscribing waveguides through deep ultra-violet (DUV) radiation [30]. 5.1.1. DUV induced modification For deep UV modification, a commercial UV-exposure equipment (Maskaligner EVG 620) is used. A DUV lamp combined with a cold mirror with reflectance in the wavelength range of 200 nm - 240 nm is used in the exposure system. The waveguides are fabricated using vacuum contact at a dosage of 5 J, measured around 240 nm with an intensity meter from Karl Sss. The investigated PMMA type is Hesa-Glas, a homopolymer from Notz Plastics (thickness 500 m). 5.1.2. Fabrication Waveguide patterns may be inscribed into polymer films by lithographic techniques using standard photomasks (Cr on glass) or pre-structured polymer plates, as depicted in figure 16. The DUV-irradiation results in a local and controlled increase of the refractive index in the illuminated areas of the polymer surface. This generates the integrated optical waveguide structures in a polymer plate. The refractive index change is up to 0.008 and has a graded index profile with an exponential decay, which reaches a depth of about 5 m. A typical near field pattern of the facet of such a waveguide is shown in figure 17. A slightly asymmetrical single mode profile is found. 5.1.3. Combination with microfluidics The waveguides can be integrated into micro-fluidic devices to further enhance the device functionality. In the first step a fluidic channel is realized by hot embossing in a polymer foil. In the next step the waveguides are patterned perpendicular to the fluidic channels by conventional lithography. No further alignment is necessary. In the next step the cover plates were heat sealed onto the hot embossed fluidic channel. The fluidic channel and waveguides were only slightly affected by the thermal bonding process. In the channels, an aqueous dye solution (water mixed with methyl orange) shows a fast and steady capillary flow and no leakage into the welding zone. The use of flow cells with dimensions near the typical length of subjects to be analyzed might be a suitable technique to use for the monitoring of specific reactions of functional beads in fluidic microstructures.
DUV irradiation chrome mask PMMA substrate
cladding core
waveguides
Fig. 17: Near field photo of waveguide facets and guided mode profile compared with gaussian profile.
5.2 Amplified spontaneous emission coupled into PMMA waveguides For the coupling experiment we deposited a patch of the organic laser material Alq3:DCM (thickness 350 nm) onto a PMMA substrate with integrated waveguides (width 10 m) in a thermal evaporation process under high vacuum conditions. The organic material has a refractive index of approximately 1.76 thus building a slab waveguide on the PMMA substrate (n=1.5). The material is then optically pumped with a short-pulse UV-laser (Crystal laser FTSS 355Q; wavelength 355 nm) under inert gas atmosphere (see Fig. 19 for a scheme). At high enough pump intensities the gain in the active material exceeds the losses and spontaneously emitted photons are amplified in the waveguide. A collapse of the emission spectrum is observed, since only those photons are amplified whose energy coincides with the spectral position of the maximum material gain. Figure 18 shows the resulting gain narrowing. Even without a resonator structure the resulting emission spectra of the Alq3:DCM material is spectrally narrowed. This might be an interesting alternative for semiconductor laser and LED excitation of fluorescence marker molecules. The amplified spontaneous emission in the Alq3:DCM patch on the PMMA substrate is coupled into the waveguide via the evanescent field. The measured mode profile of the emission in such a waveguide is displayed in figure 20.
1.0
ASE Photoluminescence
0.8
(6 (8
0.6
- 0.4
0.2
U)
0.0
550
600
650
700
750
Wavelength I nm
Focusing lens
PMMA substrate
Alq3:DCM patch
SM waveguide
Fig. 20: Mode profile of the ASE output from the PMMA waveguide (5x5m).
ACKNOWLEDGMENTS
This work was financially supported by the Research Training Group 786 of the German Research Foundation (DFG) "Mixed fields and nonlinear interactions (GKMF)", the Landesstiftung Baden-Wrttemberg GmbH and the German Federal Ministry for Education and Research BMBF (FKZ 13N8168A). D. G. Rabus would like to thank the Alexander von Humboldt Foundation (www.avh.de) for their support. We wish to gratefully acknowledge the various contributions to this paper made by our colleagues Alexander Colsmann, Johannes Junge, Christian Karnutsch and Hans-Peter Daub.
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Further author information: (Send correspondence to M.P.) M.P.: E-mail: martin.punke@lti.uni-karlsruhe.de, Telephone: +49 (0)721 608 7189